q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 absolute maximum ratings t c =25 e unless otherwise specified HFP9N80 / hfs9n80 800v n-channel mosfet oct 2016 parameter value unit bv dss 800 v i d 9a r ds(on), typ 1.2
qg ,typ 48 nc key parameters features symbol parameter to-220 to-220f unit v dss drain-source voltage 800 v i d drain current ? continuous (t c = 25 e ) 9.0 9.0 * a drain current ? continuous (t c = 100 e ) 5.7 5.7 * a i dm drain current ? pulsed (note 1) 36 36 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 860 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 17.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 178 59 w 1.42 0.48 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter to-220 to-220f unit r jc thermal resistance, junction-to-case, max. 0.7 2.1 e /w r cs thermal resistance, case-to-sink, typ. 0.5 -- e /w r ja thermal resistance, junction-to-ambient, max. 62.5 62.5 e /w * drain current limited by maximum junction temperature thermal resistance characteristics ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant HFP9N80 to-220 hfs9n80 to-220f symbol g d s g d s
q?v~zy??q?v?_ra]?????qcabgq HFP9N80_hfs9n80 notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=20mh, i as =9a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |