february 2017 docid030344 rev 1 1 / 10 this is information on a product in full production. www.st.com STPSC20H12C 1200 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? robust high voltage periphery ? operating t j from - 40 c to 175 c ? ecopack ? 2 compliant description the sic diode, available in to - 247 ll, is an ultrahigh performance power schottky rectifier. it is manufactured using a silicon carbide substrate. the wide band - gap material allows the design of a low v f schottky diode structure with a 1200 v rating. due to the schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. the minimal capacitive turn - off behavior is independent of temperature. especially suited for use in pfc and secondary side applications, this st sic diode will boost the performance in hard switching conditions. this recti fier will enhance the performance of the targeted application. its high forward surge capability ensures a good robustness during transient phases. table 1: device summary symbol value i f(av) 2 x 10 a v rrm 1200 v t j (max.) 175 c v f (typ.) 1.35 v k a 1 a 2 t o - 2 4 7 l l k a 2 a 1
characteristics STPSC20H12C 2 / 10 docid030344 rev 1 1 characteristics table 2: absolute ratings (limiting values per diode at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage (t j = - 40 c to +175 c) 1200 v i f(rms) forward rms current 25 a i f(av) average forward current t c = 150 c, dc current per diode/per device 10/20 a t c = 135 c, dc current 14/28 t c = 25 c, dc current 25/50 i frm repetitive peak forward current t c = 150 c, t j = 175 c, = 0.1 42 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal t c = 25 c 71 a t c = 150 c 60 t p = 10 s square t c = 25 c 420 t stg storage temperature range - 65 to +175 c t j operating junction temperature range - 40 to +175 c table 3: thermal resistance parameters symbol parameter typ. value max. value unit r th(j - c) junction to case per diode 0.70 0.95 c/w per device 0.35 0.48 table 4: static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm - 5 60 a t j = 150 c - 30 400 v f (2) forward voltage drop t j = 25 c i f = 10 a - 1.35 1.50 v t j = 150 c - 1.75 2.25 notes: (1) pulse test: t p = 10 ms, < 2% (2) pulse test: t p = 500 s, < 2% to evaluate the conduction losses, use the following equation: p = 1.03 x i f(av) + 0.122 x i f 2 (rms)
STPSC20H12C characteristics docid030344 rev 1 3 / 10 table 5: dynamic electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit q cj (1) total capacitive charge v r = 800 v - 57 - nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz - 725 - pf v r = 800 v, t c = 25 c, f = 1 mhz - 47 - notes: (1) most accurate value for the capacitive charge: ? ?? ( ? ? ) = ? ? ( ? ) ?? ? ? 0
charact eristics STPSC20H12C 4 / 10 docid030344 rev 1 1.1 characteristics (curves) figure 1 : forward voltage drop versus forward current (typical values, per diode) figure 2 : reverse leakage current versus reverse voltage applied (typical values, per diode) figure 3 : peak forward current versus case temperature (per diode) figure 4 : junction capacitance versus reverse voltage applied (typical values, per diode) figure 5 : relative variation of thermal impedance junction to case versus pulse duration figure 6 : non - repetitive peak s urge forward current versus pulse duration (sinusoidal waveform, per diode) 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 t p ( s ) s i n g l e p u l s e z t h ( j - c ) / r t h ( j - c ) 1 . e + 0 1 1 . e + 0 2 1 . e + 0 3 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 t p ( s ) t a = 2 5 c t a = 1 5 0 c i f s m ( a ) 0 2 0 4 0 6 0 8 0 1 0 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 t c ( c ) t = t p / t t p = 0 . 1 = 0 . 3 = 0 . 5 = 1 = 0 . 7 i m ( a ) 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 0 . 1 1 . 0 1 0 . 0 1 0 0 . 0 1 0 0 0 . 0 1 0 0 0 0 . 0 v r ( v ) f = 1 m h z v o s c = 3 0 m v r m s t j = 2 5 c c j ( p f ) 0 5 1 0 1 5 2 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 i f ( a ) v f ( v ) t a = 1 5 0 c p u l s e t e s t : t p = 5 0 0 s t a = 2 5 c 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 1 . e + 0 1 1 . e + 0 2 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 i r ( a ) v r ( v ) t j = 2 5 c t j = 1 5 0 c
STPSC20H12C characteristics docid030344 rev 1 5 / 10 figure 7 : total capacitive charges versus reverse voltage applied (typical values, per diode) 0 1 0 2 0 3 0 4 0 5 0 6 0 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 v r ( v ) q c j ( n c )
package information STPSC20H12C 6 / 10 docid030344 rev 1 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque value: 0.9 to 1.2 nm
STPSC20H12C package information docid030344 rev 1 7 / 10 2.1 to - 247 long leads package information figure 8 : to - 247 long leads package outline
package information STPSC20H12C 8 / 10 docid030344 rev 1 table 6: to - 247 long leads package mechanical data dim. mm. inches min. typ. max. min. typ. max. a 4.90 5.15 0.192 0.202 d 1.85 2.10 0.072 0.082 e 0.55 0.67 0.021 0.026 f 1.07 1.32 0.042 0.051 f1 1.90 2.38 0.074 0.093 f2 2.87 3.38 0.110 0.133 g 10.90 bsc 0.429 bsc h 15.77 16.02 0.620 0.630 l 20.82 21.07 0.810 0.820 l1 4.16 4.47 0.163 0.175 l2 5.49 5.74 0.216 0.225 l3 20.05 20.30 0.789 0.799 l4 3.68 3.93 0.144 0.154 l5 6.04 6.29 0.237 0.247 m 2.25 2.55 0.088 0.100 v 10 10 v1 3 3 v3 20 20 dia 3.55 3.66 0.139 0.143
STPSC20H12C ordering information docid030344 rev 1 9 / 10 3 ordering information table 7: ordering information order code marking package weight base qty. delivery mode STPSC20H12Cwl STPSC20H12Cwl to - 247 ll 6.09 g 30 tube 4 revision history table 8: document revision history date revision changes 28 - feb - 2017 1 initial release.
STPSC20H12C 10 / 10 docid030344 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved
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