this is information on a product in full production. september 2014 docid026619 rev 2 1/9 STPSC20H065C-Y automotive 650 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? dedicated to pfc applications ? high forward surge capability ? aec-q101 qualified ? ecopack ? 2 compliant component ? ppap c apable description the sic diode is an ultrahigh performance power schottky diode. it is manufactured using a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. especially suited for use in pfc applications, this st sic diode will boost the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. k (2) a1 (1) a2 (3) a1 k a2 a1 k a2 to-220ab stpsc20h065cty to-247 stpsc20h065cwy table 1. device summary symbol value i f(av) 2 x 10 a v rrm 650 v t j (max) 175 c www.st.com
characteristics STPSC20H065C-Y 2/9 docid026619 rev 2 1 characteristics when the two diodes 1 and 2 are used simultaneously: t j (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 1.35 x i f(av) + 0.115 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 135 c (1) , dc, per diode 10 a t c = 125 c (2) , dc, per device 20 i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s square, t c = 25 c 90 80 470 a i frm repetitive peak forward current t c = 135 c (1) , t j = 175 c, = 0.1 41 a t stg storage temperature range -55 to +175 c t j operating junction temperature (3) -40 to +175 c 1. value based on r th(j-c) max (per diode) 2. value based on r th(j-c) max (per device) 3. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? () ------------------------- - < table 3. thermal resistance symbol parameter value unit typ. max. r th(j-c) junction to case per diode per diode to-247 1.25 1.5 c/w to-220ab to ta l to-247 0.83 0.95 to-220ab r th(c) coupling 0.4 table 4. static electrical characteristics per diode symbol parameter tests conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm -9100 a t j = 150 c - 85 425 v f (2) forward voltage drop t j = 25 c i f = 10 a -1.561.75 v t j = 150 c - 1.98 2.5 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid026619 rev 2 3/9 STPSC20H065C-Y characteristics 9 table 5. dynamic electrical characteristics per diode symbol parameter test conditions typ. unit q cj (1) total capacitive charge v r = 400 v 28.5 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 480 pf v r = 400 v, t c = 25 c, f = 1 mhz 48 1. most accurate value for the capacitive charge: q = c j (v r ).dv r cj v out 0 figure 1. forward voltage drop versus forward current (typical values per diode, low level) figure 2. forward voltage drop versus forward current (typical values per diode, high level) a) i fm ( 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c v fm (v) 0 10 20 30 40 50 60 70 80 90 100 012345678 t a =150 c t a =175 c t a =25 c pulse test : t p =500s t a =100 c i fm (a) v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values per diode) figure 4. peak forward current versus case temperature (per diode) i r (a) 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 50 100 150 200 250 300 350 400 450 500 550 600 650 t j =25 c t j =150 c t j =175 c v r (v) i m (a) 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 = 0.5 = 0.1 = 0.3 = 1 = 0.7 t =tp/t tp t c (c)
characteristics STPSC20H065C-Y 4/9 docid026619 rev 2 figure 5. junction capacitance versus reverse voltage applied (typical values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration per diode 0 50 100 150 200 250 300 350 400 450 500 0.1 1.0 10.0 100.0 1000.0 f=1 mhz v osc =30 mv rms t j =25 c v r (v) c j (pf) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) figure 7. non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform) figure 8. total capacitive charges versus reverse voltage applied (typical values per diode) i fsm (a) 1.e+01 1.e+02 1.e+03 1.e-05 1.e-04 1.e-03 1.e-02 t a =25 c t a =125 c t p (s) 0 4 8 12 16 20 24 28 32 0 50 100 150 200 250 300 350 400 v r (v) q cj (nc)
docid026619 rev 2 5/9 STPSC20H065C-Y package information 9 2 package information ? epoxy meets ul94, v0 ? cooling method: conduction (c) ? recommended torque value: ? to-220ab 0.4 to 0.6 nm, ? to-247 0.55 nm (1.0 nm maximum) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 9. to-220ab dimension definitions a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m
package information STPSC20H065C-Y 6/9 docid026619 rev 2 table 6. to-220ab dimension values ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151
docid026619 rev 2 7/9 STPSC20H065C-Y package information 9 figure 10. to-247 dimension definitions table 7. to-247 dimension values ref. dimensions millimeters inches min. typ. max. min. typ max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate protrusion does not exceed 20.5 mm 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounting hole is not less than 0.9 mm 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.30 5.50 5.70 0.209 0.216 0.224 e l2 s d c a1 back view heat-sink plane l1 l b1 b2 b a e 1 1 2 2 3 3 ? r ? p
ordering information STPSC20H065C-Y 8/9 docid026619 rev 2 3 ordering information 4 revision history table 8. ordering information order code marking package weight base qty delivery mode stpsc20h065cty psc20h065cty to-220ab 1.86 g 50 tube stpsc20h065cwy psc20h065cwy to-247 4.43 g 30 tube table 9. document revision history date revision changes 26-jun-2014 1 first issue. 19-sep-2014 2 updated table 8 .
docid026619 rev 2 9/9 STPSC20H065C-Y 9 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved
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