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  this is information on a product in full production. august 2013 docid025170 rev 1 1/15 15 STFILED627, stpled627 n-channel 620 v, 0.95 typ., 7.0 a power mosfet in i2pakfp and to-220 datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? very low intrinsic capacitance ? improved diode reverse recovery characteristics ? zener-protected applications ? led lighting applications description these power mosfets boast extremely low on- resistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. d(2,tab) g(1) s(3) am01476v1 to-220 i2pakfp 1 2 3 ta b 1 2 3 order codes v dss r ds(on) max. i d p tot STFILED627 620 v < 1.2 7.0 a 30 w stpled627 table 1. device summary order codes marking package packaging STFILED627 led627 i2pakfp tube stpled627 to-220 www.st.com obsolete product(s) - obsolete product(s)
contents STFILED627, stpled627 2/15 docid025170 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 obsolete product(s) - obsolete product(s)
docid025170 rev 1 3/15 STFILED627, stpled627 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit i2pakfp to-220 v ds drain-source voltage 620 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 7.0 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 4.0 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 22 (1) a p tot total dissipation at t c = 25 c 30 90 w i ar (3) 3. pulse width limited by t j max. avalanche current, repetitive or not-repetitive 5.5 a e as (4) 4. starting t j = 25 c, i d = i ar , v dd = 50 v. single pulse avalanche energy 140 mj esd gate-source human body model (r = 1.5 k , c = 100 pf) 2.5 kv dv/dt (5) 5. i sd 5.5 a, di/dt 400 a/s, v dd = 80% v (br)dss, v dspeak v (br)dss . peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter i2pakfp to-220 unit r thj-case thermal resistance junction-case max. 4.17 1.39 c/w r thj-amb thermal resistance junction-ambient max. 62.5 c/w obsolete product(s) - obsolete product(s)
electrical characteristics STFILED627, stpled627 4/15 docid025170 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v v ds = 620 v, t c = 125 c 0.8 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 9 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.6 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.8 a 0.95 1.2 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 890 110 18 -pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance -18-pf c oss(er) (1) 1. it is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance energy related v gs = 0, v ds = 0 to 480 v -28-pf c oss(tr) (2) 2. it is defined as a constant equivalent capacitance giving the same storage energy as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance time related -63-pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g total gate charge v dd = 496 v, i d = 5.5 a, v gs = 10 v (see figure 18 ) -35-nc q gs gate-source charge - 4.5 - nc q gd gate-drain charge - 23 - nc obsolete product(s) - obsolete product(s)
docid025170 rev 1 5/15 STFILED627, stpled627 electrical characteristics the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 310 v, i d = 2.75 a, r g = 4.7 , v gs = 10 v (see figure 17 ) -22-ns t r rise time - 12 - ns t d(off) turn-off-delay time - 49 - ns t f fall time - 20 - ns table 7. source-drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 27 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 5.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 5.5 a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) -290 ns q rr reverse recovery charge 1.9 c i rrm reverse recovery current 13.5 a t rr reverse recovery time i sd = 5.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) -335 ns q rr reverse recovery charge 2.4 c i rrm reverse recovery current 14.5 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage (i d = 0) igs = 1 ma 30 - v obsolete product(s) - obsolete product(s)
electrical characteristics STFILED627, stpled627 6/15 docid025170 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for i2pakfp figure 5. thermal impedance for i2pakfp figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am09051v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am09053v1 i d 6 4 2 0 0 10 v ds (v) 20 (a) 8 10 5v 6v v gs =10v 12 am09054v1 i d 3 2 1 0 0 4 v gs (v) 8 (a) 2 6 10 4 5 6 7 8 v ds =15v am09055v1 obsolete product(s) - obsolete product(s)
docid025170 rev 1 7/15 STFILED627, stpled627 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =496v i d =5.5a 30 12 300 200 100 0 400 500 v ds v ds ( v) am09057v1 r ds(on) 1.00 0.95 0.90 0.85 0 2 i d (a) ( ) 1 3 1.05 1.10 1.15 v gs =10v 5 4 6 am09056v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am09058v1 e oss 3 2 1 0 0 100 v ds (v) (j) 400 4 200 300 5 500 am09059v1 v gs(th) 1.00 0.90 0.80 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =50a am09061v1 r ds(on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 0.0 2.5 i d =2.8a v gs =10v am09062v1 obsolete product(s) - obsolete product(s)
electrical characteristics STFILED627, stpled627 8/15 docid025170 rev 1 figure 14. normalized b vdss vs temperature figure 15. source-drain diode forward characteristics figure 16. maximum avalanche energy vs temperature bv dss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am09060v1 v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 0.8 1.0 t j =25c t j =150c t j =-50c 6 am09063v1 e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 160 i d =5.5 a v dd =50 v am09064v1 obsolete product(s) - obsolete product(s)
docid025170 rev 1 9/15 STFILED627, stpled627 test circuits 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs obsolete product(s) - obsolete product(s)
package mechanical data STFILED627, stpled627 10/15 docid025170 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 obsolete product(s) - obsolete product(s)
docid025170 rev 1 11/15 STFILED627, stpled627 package mechanical data figure 23. i 2 pakfp (to-281) drawings uhy$ obsolete product(s) - obsolete product(s)
package mechanical data STFILED627, stpled627 12/15 docid025170 rev 1 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95 obsolete product(s) - obsolete product(s)
docid025170 rev 1 13/15 STFILED627, stpled627 package mechanical data figure 24. to-220 type a drawings 0015988_typea_rev_s obsolete product(s) - obsolete product(s)
revision history STFILED627, stpled627 14/15 docid025170 rev 1 5 revision history table 11. document revision history date revision changes 28-aug-2013 1 first release. obsolete product(s) - obsolete product(s)
docid025170 rev 1 15/15 STFILED627, stpled627 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)


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