document number: 91 025 www.vishay.com s11-0510-rev. b, 21-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet IRF614, sihf614 vishay siliconix features ? dynamic dv/dt rating ? repetitive avalanche rated ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 13 mh, r g = 25 ? , i as = 2.7 a (see fig. 12). c. i sd ? 2.7 a, di/dt ? 65 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. product summary v ds (v) 250 r ds(on) ( ? )v gs = 10 v 2.0 q g (max.) (nc) 8.2 q gs (nc) 1.8 q gd (nc) 4.5 configuration single n-channel mosfet g d s to-220ab g d s rohs* compliant ordering information package to-220ab lead (pb)-free IRF614pbf sihf614-e3 snpb IRF614 sihf614 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 250 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 2.7 a t c = 100 c 1.7 pulsed drain current a i dm 8.0 linear derating factor 0.29 w/c single pulse avalanche energy b e as 61 mj repetitive avalanche current a i ar 2.7 a repetitive avalanche energy a e ar 3.6 mj maximum power dissipation t c = 25 c p d 36 w peak diode recovery dv/dt c dv/dt 4.8 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91025 2 s11-0510-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -3.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 250 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - 0.39 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v - - 25 a v ds = 200 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 1.6 a b -- 2.0 ? forward transconductance g fs v ds = 50 v, i d = 1.6 a b 0.90 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 140 - pf output capacitance c oss -42- reverse transfer capacitance c rss -9.6- total gate charge q g v gs = 10 v i d = 2.7 a, v ds = 200 v see fig. 6 and 13 b --8.2 nc gate-source charge q gs --1.8 gate-drain charge q gd --4.5 turn-on delay time t d(on) v dd = 125 v, i d = 2.7 a , r g = 24 ? , r d = 45 ?? , see fig. 10 b -7.0- ns rise time t r -7.6- turn-off delay time t d(off) -16- fall time t f -7.0- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --2.7 a pulsed diode forward current a i sm --8.0 body diode voltage v sd t j = 25 c, i s = 2.7 a, v gs = 0 v b -- 2.0 v body diode reverse recovery time t rr t j = 25 c, i f = 2.7 a, di/dt = 100 a/s b - 190 390 ns body diode reverse recovery charge q rr - 0.64 1.3 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91 025 www.vishay.com s11-0510-rev. b, 21-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 91025_01 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 25 c 4.5 v v ds , drain-to-source voltage (v) i d , drain current (a) 10 0 10 1 10 0 10 -1 10 -2 10 -1 10 0 10 -1 10 0 10 1 v ds , drain-to-source voltage (v) i d , drain current (a) 4.5 v bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 150 c 91025_02 10 -2 10 -1 20 s pulse width v ds = 50 v 10 0 10 -1 i d , drain current (a) v gs , gate-to-source voltage (v) 567 8 910 4 25 c 150 c 91025_03 10 -2 i d = 2.7 a v gs = 10 v 3.0 0.0 0.5 1.0 1.5 2.0 2.5 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) 91025_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
www.vishay.com document number: 91025 4 s11-0510-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 300 250 200 150 0 50 100 10 0 10 1 capacitance (pf) v ds , drain-to-source voltage (v) c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 91025_05 q g , total gate charge (nc) v gs , gate-to-source voltage (v) 20 16 12 8 0 4 0 28 6 4 i d = 2.7 a v ds = 50 v v ds = 125 v for test circuit see figure 13 v ds = 200 v 91025_06 10 1 10 0 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 0.5 1.3 1.1 0.9 0.7 25 c 150 c v gs = 0 v 91025_07 1.5 100 s 1 ms 10 ms operation in this area limited by r ds(on) v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 c t j = 150 c single pulse 10 2 2 5 0.1 1 2 5 10 2 5 25 110 25 10 2 25 10 3 91025_08
document number: 91 025 www.vishay.com s11-0510-rev. b, 21-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix fig. 9 - maximum drain curre nt vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case i d , drain current (a) t c , case temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 25 150 125 100 75 50 91025_09 3.0 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectangular pulse duration (s) thermal response (z thjc ) notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01 91025_11
www.vishay.com document number: 91025 6 s11-0510-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd a 10 v var y t p to obtain required i as i as v ds v dd v ds t p 140 0 40 60 80 100 120 25 150 125 100 75 50 starting t j , junction temperature (c) e as , single pulse energy (mj) bottom to p i d 1.2 a 1.7 a 2.7 a v dd = 50 v 91025_12c 20 q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
document number: 91 025 www.vishay.com s11-0510-rev. b, 21-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF614, sihf614 vishay siliconix fig.14 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91025 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
package information www.vishay.com vishay siliconix revison: 14-dec-15 1 document number: 66542 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220-1 note ? m* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c dim. millimeters inches min. max. min. max. a 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 d 14.33 15.85 0.564 0.624 e 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.10 6.71 0.240 0.264 j(1) 2.41 2.92 0.095 0.115 l 13.36 14.40 0.526 0.567 l(1) 3.33 4.04 0.131 0.159 ? p 3.53 3.94 0.139 0.155 q 2.54 3.00 0.100 0.118 ecn: x15-0364-rev. c, 14-dec-15 dwg: 6031 package picture a s e xian
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
