q?v~zy??q?v?_ra]??qcabfq hfw8n60u_HFI8N60U bv dss = 600 v r ds(on) typ
i d = 7.5 a features absolute maximum ratings t c =25 e unless otherwise specified hfw8n60u / HFI8N60U 600v n-channel mosfet symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 7.5 a drain current ? continuous (t c = 100 e ) 4.7 a i dm drain current ? pulsed (note 1) 30 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 280 mj i ar avalanche current (note 1) 7.5 a e ar repetitive avalanche energy (note 1) 15.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 e ) * 3.13 w power dissipation (t c = 25 e ) - derate above 25 e 150 w 1.2 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e oct 2015 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.82 e /w r ja junction-to-ambient* -- 40 r ja junction-to-ambient -- 62.5 * when mounted on the minimum pad size recommended (pcb mount) 1.gate 2. drain 3. source hfw8n60u HFI8N60U d 2 -pak i 2 -pak ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 22.0 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested
q?v~zy??q?v?_ra]??qcabfq hfw8n60u_HFI8N60U electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 7.5 a i sm pulsed source-drain diode forward current -- -- 30 v sd source-drain diode forward voltage i s = 7.5 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 7.5 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 350 -- qrr reverse recovery charge -- 3.3 -- & on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 3 , referenced to 25 e -- 0.6 -- v/ e i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 3 v ds = 480 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1200 1560 ? c oss output capacitance -- 100 130 ? c rss reverse transfer capacitance -- 11.0 14.5 ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 7.5 a, r g = 25 ? (note 4,5) -- 35 70 t r turn-on rise time -- 50 100 t d(off) turn-off delay time -- 120 240 t f turn-off fall time -- 50 100 q g total gate charge v ds = 480 v, i d = 7.5 a, v gs = 10 v (note 4,5) -- 22.0 29.0 nc q gs gate-source charge -- 6.5 -- nc q gd gate-drain charge -- 6.5 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.75 a -- 0.96 1.2 ? notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=9.0mh, i as =7.5a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |