? semiconductor components industries, llc, 2014 november, 2014 ? rev. 8 1 publication order number: d44vh/d d44vh10(npn), d45vh10 (pnp) complementary silicon power transistors these complementary silicon power transistors are designed for high?speed switching applications, such as switching regulators and high frequency inverters. the devices are also well?suited for drivers for high power switching circuits. features ? fast switching ? key parameters specified @ 100 c ? low collector?emitter saturation voltage ? complementary pairs simplify circuit designs ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage v ceo 80 vdc collector?emitter voltage v cev 100 vdc emitter base voltage v eb 7.0 vdc collector current ? continuous i c 15 adc collector current ? peak (note 1) i cm 20 adc total power dissipation @ t c = 25 c derate above 25 c p d 83 0.67 w w/ c operating and storage junction temperature range t j , t stg ?55 to 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. pulse width 6.0 ms, duty cycle 50%. thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.5 c/w thermal resistance, junction to ambient r ja 62.5 c/w maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds t l 275 c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information marking diagram 15 a complementary silicon power transistors 80 v, 83 w x = 4 or 5 a = assembly location y = year ww = work week g = pb?free package D44VH10G t o?220 (pb?free) 50 units/rail d45vh10g t o?220 (pb?free) 50 units/rail www.onsemi.com to?220 case 221a style 1 1 2 3 4 d4xvh10g ayww 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
d44vh10 (npn), d45vh10 (pnp) www.onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter sustaining voltage (note 2) (i c = 25 madc, i b = 0) v ceo(sus) 80 ? ? vdc collector?emitter cutoff current (v ce = rated v cev , v be(off) = 4.0 vdc) (v ce = rated v cev , v be(off) = 4.0 vdc, t c = 100 c) i cev ? ? ? ? 10 100 adc emitter base cutoff current (v eb = 7.0 vdc, i c = 0) i ebo ? ? 10 adc on characteristics (note 2) dc current gain (i c = 2.0 adc, v ce = 1.0 vdc) (i c = 4.0 adc, v ce = 1.0 vdc) h fe 35 20 ? ? ? ? ? collector?emitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) d44vh10 (i c = 8.0 adc, i b = 0.8 adc) d45vh10 (i c = 15 adc, i b = 3.0 adc, t c = 100 c) d44vh10 d45vh10 v ce(sat) ? ? ? ? ? ? ? ? 0.4 1.0 0.8 1.5 vdc base?emitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) d44vh10 (i c = 8.0 adc, i b = 0.8 adc) d45vh10 (i c = 8.0 adc, i b = 0.4 adc, t c = 100 c) d44vh10 (i c = 8.0 adc, i b = 0.8 adc, t c = 100 c) d45vh10 v be(sat) ? ? ? ? ? ? ? ? 1.2 1.0 1.1 1.5 vdc dynamic characteristics current gain bandwidth product (i c = 0.1 adc, v ce = 10 vdc, f = 20 mhz) f t ? 50 ? mhz output capacitance (v cb = 10 vdc, i c = 0, f test = 1.0 mhz) d44vh10 d45vh10 c ob ? ? 120 275 ? ? pf switching characteristics delay time (v cc = 20 vdc, i c = 8.0 adc, i b1 = i b2 = 0.8 adc) t d ? ? 50 ns rise time t r ? ? 250 storage time t s ? ? 700 fall time t f ? ? 90 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%.
d44vh10 (npn), d45vh10 (pnp) www.onsemi.com 3 figure 1. d44vh10 dc current gain figure 2. d45vh10 dc current gain i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0.01 10 100 1000 10 1 0.1 0.01 10 100 1000 h fe , dc current gain v ce = 1 v 125 c h fe , dc current gain figure 3. d44vh10 dc current gain figure 4. d45vh10 dc current gain i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0.01 10 100 1000 10 1 0.1 0.01 10 100 1000 h fe , dc current gain v ce = 5 v h fe , dc current gain figure 5. d44vh10 on?voltage figure 6. d45vh10 on?voltage i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0 0.05 0.40 10 1 0.1 0 0.1 0.3 0.6 saturation voltage (volts) v ce(sat) @ i c /i b = 10 saturation voltage (volts) ?40 c 25 c v ce = 1 v 125 c ?40 c 25 c 125 c ?40 c 25 c v ce = 5 v 125 c ?40 c 25 c 125 c ?40 c 25 c 0.10 0.15 0.20 0.25 0.30 0.35 0.2 0.5 0.4 v ce(sat) @ i c /i b = 10 125 c ?40 c 25 c
d44vh10 (npn), d45vh10 (pnp) www.onsemi.com 4 figure 7. d44vh10 on?voltage figure 8. d45vh10 on?voltage i c , collector current (amps) i c , collector current (amps) 10 1 0.1 0 0.2 1.2 10 1 0.1 0 0.2 0.6 1.4 saturation voltage (volts) v be(sat) @ i c /i b = 10 saturation voltage (volts) 125 c ?40 c 25 c 0.4 0.6 0.8 1.0 0.4 1.0 0.8 v be(sat) @ i c /i b = 10 125 c ?40 c 25 c 1.2 100 1.0 v ce , collector?emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% 2.0 3.0 20 30 50 100 1.0 7.0 d44h/45h8 d44h/45h10,11 figure 9. maximum rated forward bias safe operating area 70 1.0 s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 s 100 s 1.0 ms i c , collector current (amps) 0 figure 10. power derating t, temperature ( c) 0 40 60 100 120 16 0 40 t c 20 60 0 2.0 t a 1.0 3.0 80 140 t c t a 20 p d , power dissipation (watts) t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 11. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01
d44vh10 (npn), d45vh10 (pnp) www.onsemi.com 5 package dimensions to?220 case 221a?09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 d44vh/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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