RU20T8M7 n-channel advanced power mosfet symbol rating unit v dss 20 v gss 10 t j 150 c t stg -55 to 150 c i s t c =25c 28 a i dp t c =25c 60 a t c =25c 28 t c =100c 18 t a =25c 8 t a =70c 6.4 t c =25c 25 t c =100c 10 t a =25c 1.7 t a =70c 1.1 ruichips semiconductor co., ltd rev. a? may., 2013 1 www.ruichips.com continuous drain current@t a (v gs =4.5v) maximum power dissipation@t c maximum power dissipation@t a maximum junction temperature storage temperature range diode continuous forward current 300s pulse drain current tested mounted on large heat sink i d a p d w continuous drain current@t c (v gs =4.5v) parameter common ratings (t c =25c unless otherwise noted) ? 20v/8a, r ds (on) =13m(typ.)@v gs =4.5v r ds (on) =14m(typ.)@v gs =4v r ds (on) =16m(typ.)@v gs =3.1v r ds (on) =18m(typ.)@v gs =2.5v ? super high dense cell design ? fast switching speed ? esd protected ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? dc-dc converters ? power management drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings sdfn2050 dual n-channel mosfet s1 s1 g1 d1/d2 pin1 pin1 g2 s2 s2 d2 s2 g2 g1 s1 d1
RU20T8M7 symbol rating unit r jc 5 c/w r ja 75 c/w e as tbd mj min. typ. max. bv dss drain-source breakdown voltage 20 24 v 1 t j =125c 30 v gs(th) gate threshold voltage 0.5 1.5 v i gss gate leakage current 10 a 13 15 p
14 16 p
16 18 p
18 20 p
v sd diode forward voltage 1.2 v t rr reverse recovery time 25 ns q rr reverse recovery charge 13 nc r g gate resistance 1.5
c iss input capacitance 1150 c oss output capacitance 180 c rss reverse transfer capacitance 140 t d(on) turn-on delay time 5 t r turn-on rise time 13 t d(off) turn-off delay time 34 t f turn-off fall time 17 q g total gate charge 13 q gs gate-source charge 1.2 q gd gate-drain charge 3.9 ruichips semiconductor co., ltd rev. a? may., 2013 2 www.ruichips.com v gs =0v, i ds =250a electrical characteristics (t c =25c unless otherwise noted) r ds(on) drain-source on-state resistance v gs =4.5v, i ds =8a v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU20T8M7 unit i dss zero gate voltage drain current v ds =20v, v gs =0v a parameter thermal resistance-junction to case thermal resistance-junction to ambient avalanche energy, single pulsed drain-source avalanche ratings v gs =0v,v ds =0v,f=1mhz dynamic characteristics v gs =10v, v ds =0v v gs =2.5v, i ds =5a diode characteristics i sd =8a, v gs =0v i sd =8a, dl sd /dt=100a/s v gs =4v, i ds =7a v gs =3.1v, i ds =6a v ds =16v, v gs =4.5v, i ds =8a gate charge characteristics nc ns v gs =0v, v ds =10v, frequency=1.0mhz pf v dd =10v,i ds =8a, v gen =4.5v,r g
RU20T8M7 notes: device marking package packaging quantity reel size tape width RU20T8M7 RU20T8M7 sdfn2050 tape&reel 2500 7'' 12mm ruichips semiconductor co., ltd rev. a? may., 2013 3 www.ruichips.com ordering and marking information pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. when mounted on 1 inch square copper board, t 10sec. limited by t jmax , v dd = 16v, r g = 50, starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing.
RU20T8M7 ruichips semiconductor co., ltd rev. a? may., 2013 4 www.ruichips.com typical characteristics 0 5 10 15 20 25 30 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=4.5v 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=8a 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.01 0.1 1 10 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 5 c/w
RU20T8M7 ruichips semiconductor co., ltd rev. a? may., 2013 5 www.ruichips.com typical characteristics 0 30 60 90 120 150 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 1v 2.5v 3.1v 4v 4.5v 0 5 10 15 20 25 30 0 2 4 6 8 10 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 4.5v 4v 3.1v 2.5v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =4.5v i d =8a t j =25 c rds(on)=13m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 300 600 900 1200 1500 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=16v ids=8a
RU20T8M7 ruichips semiconductor co., ltd rev. a? may., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU20T8M7 ruichips semiconductor co., ltd rev. a? may., 2013 7 www.ruichips.com package information sdfn2050 d e e d1 b k e1 a3 a1 a l n1 n2 n3 n6 n5 n4 ( only for reference ) land pattern 0.3 0.5 0.6 0.3 3.3 0.3 5.1 1.3 1.6 min nom max min nom max a 0.700 0.800 0.900 0.028 0.031 0.035 a1 0.000 0.025 0.050 0.000 0.001 0.002 a3 d 1.924 2.000 2.076 0.076 0.079 0.082 e 4.924 5.000 5.076 0.194 0.197 0.200 d1 1.350 1.450 1.550 0.053 0.057 0.061 e1 2.950 3.050 3.150 0.116 0.120 0.124 k b 0.200 0.250 0.300 0.008 0.010 0.012 e l 0.424 0.500 0.576 0.017 0.020 0.023 0.500 typ 0.020 typ 0.203 ref. 0.008 ref. symbol mm inch 0.200 min. 0.008 min.
RU20T8M7 ruichips semiconductor co., ltd rev. a? may., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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