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| RQ3E120AT pch -30v -12a middle power mosfet datasheet ll outline v dss -30v hsmt8 r ds(on) (max.) 8.0m i d 12a p d 2w ll inner circuit ll features 1) low on - resistance. 2) high power small mold package (hsmt8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. ll packaging specifications type packing embossed tape reel size (mm) 330 ll application tape width (mm) 12 switching basic ordering unit (pcs) 3000 taping code tb marking e120at ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss -30 v continuous drain current i d 12 a pulsed drain current i d,pulse *2 48 a gate - source voltage v gss 20 v power dissipation p d *1 2 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150730 - rev.001 downloaded from: http:///
RQ3E120AT datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *1 - 62.5 - /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = -1ma -30 - - v breakdown voltage temperature coefficient v (br)dss i d = -1ma - -22 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -30v, v gs = 0v - - -1 a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 100 na gate threshold voltage v gs(th) v ds = -10v, i d = -1ma -1.0 - -2.5 v gate threshold voltage temperature coefficient v gs(th) i d = -1ma - 2.9 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *3 v gs = -10v, i d = -12a - 6.1 8.0 m v gs = -4.5v, i d = -12a - 8.7 11.3 forward transfer admittance |y fs | *3 v ds = -5v, i d = -12a 15 - - s *1 mounted on 40mm40mm cu board *2 pw Q 10s, duty cycle Q 1% *3 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 3200 - pf output capacitance c oss v ds = -15v - 550 - reverse transfer capacitance c rss f = 1mhz - 410 - turn - on delay time t d(on) *3 v dd ? -15v,v gs = -10v - 20 - ns rise time t r *3 i d = -6a - 30 - turn - off delay time t d(off) *3 r l ? 2.5 - 140 - fall time t f *3 r g = 10 - 95 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? -15v i d = -12a v gs = -10v - 62 - nc v gs = -4.5v - 33 - gate - source charge q gs *3 - 9 - gate - drain charge q gd *3 - 12 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - -1.67 a body diode pulse current i sp *2 - - -48 a forward voltage v sd *3 v gs = 0v, i s = -1.67a - - -1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 tranceconductance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic curves fig. 1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 typical capacitance vs. drain - source voltage fig.17 switching characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll e lectrical characteristic curves fig. 1 8 dynamic input characteristics fig.19 source curren t vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll measurement circuits fig. 1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150730 - rev.001 downloaded from: http:/// RQ3E120AT datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150730 - rev.001 downloaded from: http:/// downloaded from: http:/// |
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