j. , one, 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 MJW16018 description ? collector-emitter voltage- : vceo(susf soov(min) ? fast turn-off time applications designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. they are particu- larly suited for line operated switchmode applications as: ? switching regulators ? inverters ? solenoids ? relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25 c) symbol voev vceo(sus) vebo ic i cm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation @tc=25"c collector power dissipation @tc=100c junction temperature storage temperature range value 1500 800 6 10 15 8 12 125 50 150 -55-150 unit v v v a a a a w 'c c thermal characteristics symbol r ^ ; f -i - t i^wv^wp.:^^.*?^, * *.*-,.,.-^ "* j~.^-,-?^,^^,..,_j 'ir; ',, i ; ^. ul? t ' ! ;! ? f-*!!^|| k i :| ' -*;;*? i : ; ? v :i ( ?! ; .. ?! -?k * ...i ,. y ;, r y .. -*? j p*--? ?*- -*-h i?- g ?? mm dim win max a 19,80 20.20 b 15,40 15.80 c 4.90 5.10 d 0.90 1.10 e 1.40 1.60 f 1.90 2.10 g 10,80 11.00 h 2.40 2.60 j 0,50 0.70 k 19.50 20,50 p 3.90 4.10 q 3.30 3.50 u 5 20 5 40 v 2.90 3.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. intbrmaixni furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. howevt,. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJW16018 electrical characteristics tj=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat) icev icer iebo hfe cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=50ma; ib=0 ic=5a;ib=2a tc=100'c ic=10a;ib=5a ic=5a ;ib=2a tc=100'c vcev=1500v,vbe(off)=1.5v tc=iooc vce=1500v;rbe=50q tc=100'c veb=6v; lc=0 lc=5a ; vce=5v f=1khz;vce=10v min 800 4 typ. max 1.0 1.5 5.0 1.5 1.5 0.25 1.50 2.5 0.1 450 unit v v v v ma ma ma pf switching times; resistive load td tr ts tf delay time rise time storage time fall time lc=5a; ib1= ib2= 2a; vcc=250v,rb2=3q; pw=25 u s duty cycle =2% 0.085 0.9 4.5 0.2 0.2 2 9 0.4 u s y s u s us
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