inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BU4508DX description collector-emitter sustaining voltage- : v ceo(sus) = 800v (min) high switching speed built-in damper diode applications designed for use in horizontal deflection circuits of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter v oltage 800 v v ebo emitter-base voltage 8 v i c collector current- continuous 8 a i cm collector current-peak 15 a i b base current- continuous 4 a i bm base current-peak 6 a p c collector power dissipation @ t c =25 45 w t j junction temperature 150 t stg storage temperature range -65~150 symbol parameter max unit r th j-c thermal resistance,junction to case 2.8 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BU4508DX electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0, l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 300ma; i c = 0 8 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.25a 3.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.25a 1.03 v i ces collector cutoff current v ce = 1500v; v be = 0 v ce = 1500v; v be = 0; t c =125 1.0 2.0 ma h fe-1 dc current gain i c = 0.5a; v ce = 5v 7 h fe-2 dc current gain i c = 5a; v ce = 5v 4.2 v ecf c-e diode forward voltage i f = 5a 2.2 v switching times t stg storage time i c = 5a, i b1 = 1.0a; i b2 = -2.5a 3.75 s t f fall time 0.4 s
|