sot323 pnp silicon planar general purpose transistors issue 1 - december 1998 partmarking detail: ZUMT860B t2b zumt860c t22 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ces -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v continuous collector current i c -100 ma peak pulse current i em -200 ma base current i bm -200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector cut-off current i cbo -15 -4 na m a v cb = -30v v cb = -30v, t amb =150c collector-emitter saturation voltage v ce(sat) -75 -250 mv i c =-10ma, i b =-0.5ma -250 -650 mv i c =-100ma, i b =-5ma -300 -600 mv i c =-10ma* base-emitter saturation voltage v be(sat) -700 -850 mv i c =-10ma ,i b =-0.5ma i c =-100ma,i b =-5ma base-emitter voltage v be -580 -650 -750 -820 mv i c =-2ma, v ce =-5v i c =-10ma, v ce =-5v * collector-emitter saturation voltage at i c = 10ma for the characteristics going through the operating point i c = 11ma, v ce = 1v at constant base current. ZUMT860B zumt860c
typical characteristics 1m 1 1m 1 1m 1 100m 1 1m 1m i c - collector current (a) v ce(sat) v i c 0 1.2 ic/ib=10 ic/ib=20 ic/ib=50 +25c -55c 500 +100c 0 i c - collector current (a) h fe v i c +25c +100c -55c 0 ic - collector current (a) v be(on) v i c +100c +150c +25c 0 ic - collector current (a) v ce(sat) v ic +100c +150c +25c 0 ic - collector current (a) v be(sat) v i c 1s 100ms 1 dc 1m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100us vce=5v +25 c -55c ic/ib=10 vce=5v -55c ic/ib=10 10m 100m 0.4 0.8 10m 100m 1 0.4 0.8 1.2 10m 100m 250 10m 100m 1.0 0.5 10m 100m 1.0 0.5 1 10 100 10m 100m safe operating area 1m 10m 100ms 100s 1ms 10ms 100m 1 dc 1s ZUMT860B zumt860c
electrical characteristics (continued) parameter symbol min. typ. max. unit conditions. noise figure n - 1 4 db v cb = -5v, i c =-200 m a, r g =2k w , f=1khz, d f=200hz C13db v cb = -5v, i c =-200 m a, r g =2k w , f=30hz to 15khz at -3db points equivalent noise voltage e n C C 110 nv v cb = -5v, i c =-200 m a, r g =2k w , f=10hz to 50hz at -3db points dynamic characteristics group b h ie 3.2 4.5 8.5 k w v ce =-5v ic=-2ma f=1khz group c 68.715 k w group b h re 2 x10 -4 group c 3 x10 -4 group b h fe 240 330 500 group c 450 600 900 group b h oe C30 60 m s group c C 60 110 m s static forward current ratio group b h fe 150 i c =-0.01ma,v ce =-5v 220 290 475 i c =-2ma, v ce =-5v CCC i c =-100ma,v ce =-5v group c h fe 270 i c =-0.01ma, v ce =-5v 420 500 800 i c =-2ma, v ce =-5v CCC i c =-100ma,v ce =-5v transition frequency f t C 300 C mhz i c =-10ma,v ce =-5v f=100mhz collector-base capacitance c obo 4.5 pf v cb =-10v, f=1mhz ZUMT860B zumt860c
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