MIXA300PF1200TSF tentative phase leg + free wheeling diodes + ntc xpt igbt module 5 6 4 1 2 8 7 10/11 3 9 part number MIXA300PF1200TSF backside: isolated c25 ce(sat) vv 1.8 ces 465 1200 = v= v i= a 2x features / advantages: applications: package: high level of integration - only one power semiconductor module required for the whole drive rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) temperature sense included sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives pumps, fans air-conditioning system inverter and power supplies ups simbus f industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA300PF1200TSF tentative -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 465 a c vj symbol definition ratings typ. max. min. conditions unit 325 v v ce(sat) total power dissipation 1500 w collector emitter leakage current 6.5 v turn-on delay time 110 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 650 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 2.15 5.9 5.4 ma 0.3 ma 0.3 1.5 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 885 nc t t t e e d(on) r d(off) f on off 68 ns 290 ns 345 ns 20 mj 42 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g tbd a r thjc thermal resistance junction to case 0.085 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 265 a c 185 t = c c i f25 i f t = 25c forward voltage v 2.20 v vj 1.90 t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr 38 c 300 a 350 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec 15 mj reverse recovery energy r r thjc thermal resistance junction to case 0.145 k/w v = v t = 25c c t = 25c vj t = c vj vj 300 12 300 300 300 300 2.2 2.2 2.2 600 900 4500 600 i cm 1.8 r thch thermal resistance case to heatsink 0.04 k/w r thch thermal resistance case to heatsink 0.05 k/w * not applicable, see ices value above igbt diode 600 v v = v cemax 1200 80 80 80 80 125 125 125 125 125 a ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA300PF1200TSF tentative ratings xxx xx-xxxxx yywwx 2d data matrix logo ul part number date code location i x m a 300 pf 1200 t sf part number igbt xpt igbt gen 1 / std phase leg + free wheeling diodes thermistor \ temperature sensor simbus f module = = = = = current rating [a] reverse voltage [v] = = = = package t vj c m d nm 6 mounting torque 3 t stg c 125 storage temperature -40 weight g 350 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 6 terminal torque 3 v v t = 1 second v t = 1 minute isolation voltage mm mm 12.7 10.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current a per terminal 150 -40 terminal to terminal simbus f delivery mode quantity code no. part number marking on product ordering 0 25 50 75 100 125 150 10 2 10 3 10 4 10 5 r [ ] typ. ntc resistance vs. temperature t c [c] 50/60 hz, rms; i 1 ma isol MIXA300PF1200TSF 512264 box 3 MIXA300PF1200TSF standard r pin-chip resistance pin to chip 0.65 m ? 2500 3000 isol v = v cesat + 2 r i c resp. v = v f + 2 r i f threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 4.6 1.25 8.5 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level t = 25 resistance k ? 5.25 k vj 3375 r 25 b 25/50 5 4.75 temperature coefficient symbol definition typ. max. min. conditions unit temperature sensor ntc ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA300PF1200TSF tentative 1,2 1 7 2 0 , 5 2 2 5 0 5 7 , 5 6 2 94,5 110 122 137 152 0 , 8 r2,5 0 7 , 2 5 1 1 , 0 6 3 3 , 9 2 3 7 , 7 3 6 0 , 5 9 6 4 , 4 8 7 , 2 6 7 , 7 5 0 3,75 57,96 0,46 10 11 98 7 6 5 1 2 4 3 5 6 4 1 2 8 7 10/11 3 9 outlines simbus f ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA300PF1200TSF tentative 01234 0 100 200 300 400 500 600 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 012345 0 100 200 300 400 500 600 v ce [v] i c [a] q g [nc] v ge [v] 9v 11 v 5 6 7 8 9 10111213 0 100 200 300 400 500 600 0 200 400 600 800 1000 1200 0 5 10 15 20 t vj = 125c 13 v 0 100 200 300 400 500 600 0 20 40 60 80 0 200 400 600 800 [mj] e off fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. transfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. turn-on energy & switching times vs. collector current, inductive switching fig. 6 typ. switching energy versus gate resistance e [mj] i c [a] v ge =15v t vj = 25c t vj = 125c t vj = 25c t vj = 125c i c = 100 a v ce = 600 v i c = 300 a v ce =600 v v ge = 15 v t vj = 125c 0.001 0.01 0.1 1 10 0.00 0.02 0.04 0.06 0.08 0.10 t[s] single pulse fig. 7 typ. trans. therm. impedance e rec(off) e on r g = 2.2 v ce =600 v v ge = 15 v t vj = 125c t d(on) t f 0 2 4 6 8 10121416 0 10 20 30 40 50 60 0 50 100 150 200 250 300 fig. 8typ. turn-onenergy, switchingtimes vs. g ate resistor, inductive switchin g e [mj] r g [ ] e rec(off) e on t d(on) t r i c = 300 a v ce = 600 v v ge =15 v t vj =125c 0 2 4 6 8 10121416 10 20 30 40 50 200 400 600 800 1000 [mj] e off fig.9 typ. turn-off energy, switching times vs. gate resistor, inductive switching r g [ ] i c = 300 a v ce =600 v v ge = 15 v t vj = 125c i c [a] t d(off) t r t d(off) t r t [ns] t [ns] t [ns] t [ns] z thjc [k/w] igbt ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA300PF1200TSF tentative 0.001 0.01 0.1 1 10 0.00 0.04 0.08 0.12 0.16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 600 v f [v] t[s] i f [a] z thjc [k/w] single pulse t j =125c t j =25c fig. 1 typ. forward current versus v f fi g .7 t y p .transientthermalim p edance j unction to case fig. 2 typ. reverse recovery characteristics fig. 3 typ. reverse recovery characteristics fig. 4 typ. reverse recovery characteristics fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. recovery energy e rec versus -di/dt 2500 3000 3500 4000 4500 100 200 300 400 i rr [a] di f /dt [a/ s] 15 10 4.7 2.2 2500 3000 3500 4000 4500 300 400 500 600 t rr [a] di f /dt [a/ s] 15 10 4.7 2.2 0 100 200 300 400 500 600 100 200 300 400 i rr [a] i f [a] i f = 300 a v r = 600 v t vj = 125c i f =300a v r = 600 v t vj = 125c r g =2.2 v r = 600 v t vj = 125c 0 100 200 300 400 500 600 0 20 40 60 q rr [a] r g = 2.2 v r = 600 v t vj = 125c i f [a] diode ixys reserves the right to change limits, conditions and dimensions. 20121105 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
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