2011. 1. 12 1/7 semiconductor technical data ku035n06p n-ch trench mos fet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h v dss = 60v, i d = 160a h drain-source on resistance : r ds(on) =3.5m ? (max.) @v gs = 10v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. calculated continuous current based on maximum allowable junction temperature characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 160* a @t c =100 ? 101 pulsed (note1) i dp 480* single pulsed avalanche energy (note 2) e as 960 mj repetitive avalanche energy (note 1) e ar 12 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 167 w derate above 25 ? 1.33 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.75 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w g d s pin connection ssss k ssss k ssss k ssss k ssss k ssss k sssss k k ssss k ssss k ssss k ssss s k k s s s
2011. 1. 12 2/7 ku035n06p revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.06 - v/ ? drain cut-off current i dss v ds =60v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =80a - 2.9 3.5 m ? dynamic total gate charge q g v ds =48v, i d =80a v gs =10v (note4,5) - 200 - nc gate-source charge q gs - 35 - gate-drain charge q gd - 70 - turn-on delay time t d(on) v dd =30v i d =80a r g =25 ? (note4,5) - 110 - ns turn-on rise time t r - 150 - turn-off delay time t d(off) - 460 - turn-off fall time t f - 280 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 8400 - pf output capacitance c oss - 960 - reverse transfer capacitance c rss - 520 - source-drain diode ratings continuous source current i s v gs |