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| 1 IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet dpak mosfet 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years pioneeringsuperjunctiontechnologyinnovation. features ?best-in-classfomr ds(on) *e oss ;reducedq g ,c iss ,andc oss ?best-in-classdpakr ds(on) ?best-in-classv (gs)th of3vandsmallestv (gs)th variationof0.5v ?integratedzenerdiodeesdprotection ?best-in-classcoolmos?qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtojedec(j-std20andjesd22) ?fullyoptimizedportfolio benefits ?best-in-classperformance ?enablinghigherpowerdensitydesigns,bomsavingsandlower assemblycosts ?easytodriveandtoparallel ?betterproductionyieldbyreducingesdrelatedfailures ?lessproductionissuesandreducedfieldreturns ?easytoselectrightpartsforfinetuningofdesigns applications recommendedforhardandsoftswitchingflybacktopologiesforled lighting,lowpowerchargersandadapters,audio,auxpowerand industrialpower.alsosuitableforpfcstageinconsumerapplications andsolar. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 800 v r ds(on),max 1.4 w q g,typ 10 nc i d 4 a e oss @ 500v 0.9 j v gs(th),typ 3 v esd class (hbm) 2 - type/orderingcode package marking relatedlinks IPD80R1K4P7 pg-to 252 80r1k4p7 see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 3 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 4 2.7 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 8.9 a t c =25c avalanche energy, single pulse e as - - 8 mj i d =0.6a; v dd =50v avalanche energy, repetitive e ar - - 0.07 mj i d =0.6a; v dd =50v avalanche current, repetitive i ar - - 0.6 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0to400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation p tot - - 32 w t c =25c operating and storage temperature t j , t stg -55 - 150 c - continuous diode forward current i s - - 3 a t c =25c diode pulse current 2) i s,pulse - - 8.9 a t c =25c reverse diode dv/dt 3) dv/dt - - 1 v/ns v ds =0to400v, i sd <=0.7a, t j =25c maximum diode commutation speed 3) di f /dt - - 50 a/ m s v ds =0to400v, i sd <=0.7a, t j =25c 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.9 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer 70 m m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave- & reflow soldering allowed t sold - - 260 c reflow msl1 1) limited by t j max . maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g ; t cond <2 m s tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 4 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 800 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.5 3 3.5 v v ds = v gs , i d =0.07ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =800v, v gs =0v, t j =25c v ds =800v, v gs =0v, t j =150c gate-source leakage curent incl. zener diode i gss - - 1 a v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.2 3.1 1.4 - w v gs =10v, i d =1.4a, t j =25c v gs =10v, i d =1.4a, t j =150c gate resistance r g - 1.5 - w f =250khz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 250 - pf v gs =0v, v ds =500v, f =250khz output capacitance c oss - 6.5 - pf v gs =0v, v ds =500v, f =250khz effective output capacitance, energy related 1) c o(er) - 8 - pf v gs =0v, v ds =0to500v effective output capacitance, time related 2) c o(tr) - 97 - pf i d =constant, v gs =0v, v ds =0to500v turn-on delay time t d(on) - 10 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w rise time t r - 8 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w turn-off delay time t d(off) - 40 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w fall time t f - 20 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1 - nc v dd =640v, i d =1.4a, v gs =0to10v gate to drain charge q gd - 5 - nc v dd =640v, i d =1.4a, v gs =0to10v gate charge total q g - 10 - nc v dd =640v, i d =1.4a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =640v, i d =1.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to500v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to500v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 5 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =1.4a, t f =25c reverse recovery time t rr - 800 - ns v r =400v, i f =0.7a,d i f /d t =50a/s reverse recovery charge q rr - 5 - c v r =400v, i f =0.7a,d i f /d t =50a/s peak reverse recovery current i rrm - 9 - a v r =400v, i f =0.7a,d i f /d t =50a/s tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 6 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 7 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 10 1.4 2.4 3.4 4.4 5.4 6.4 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.1 0.6 1.1 1.6 2.1 2.6 3.1 98% typ r ds(on) =f( t j ); i d =1.4a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 8 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 120 v 640 v v gs =f( q gate ); i d =1.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 e as =f( t j ); i d =0.6a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 9 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 700 750 800 850 900 950 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 800 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 10 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 11 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 6packageoutlines figure1outlinepg-to252,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 06 05-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00003328 millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.89 5.02 9.40 6.35 4.32 5.97 3 b3 a dim b2 c b c2 a1 4,95 min 2.16 0.64 0.46 0.65 0.40 0.00 0.046 0.020 0.035 0.198 0.250 0.185 0.235 0.370 1.78 1.02 5.21 5.84 6.22 6.73 1.27 10.48 0.180 (bsc) 0.090 (bsc) 3 0.070 0.205 0.040 0.230 0.265 0.050 0.245 0.413 0.195 0.085 0.025 0.018 0.026 0.016 0.000 5.50 max 2.41 0.15 1.15 0.61 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l 12 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 06 05-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00003328 millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.89 5.02 9.40 6.35 4.32 5.97 3 b3 a dim b2 c b c2 a1 4,95 min 2.16 0.64 0.46 0.65 0.40 0.00 0.046 0.020 0.035 0.198 0.250 0.185 0.235 0.370 1.78 1.02 5.21 5.84 6.22 6.73 1.27 10.48 0.180 (bsc) 0.090 (bsc) 3 0.070 0.205 0.040 0.230 0.265 0.050 0.245 0.413 0.195 0.085 0.025 0.018 0.026 0.016 0.000 5.50 max 2.41 0.15 1.15 0.61 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l 13 800vcoolmosap7powertransistor IPD80R1K4P7 rev.2.0,2016-07-05 final data sheet revisionhistory IPD80R1K4P7 revision:2016-07-05,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-07-05 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 06 05-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00003328 millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.89 5.02 9.40 6.35 4.32 5.97 3 b3 a dim b2 c b c2 a1 4,95 min 2.16 0.64 0.46 0.65 0.40 0.00 0.046 0.020 0.035 0.198 0.250 0.185 0.235 0.370 1.78 1.02 5.21 5.84 6.22 6.73 1.27 10.48 0.180 (bsc) 0.090 (bsc) 3 0.070 0.205 0.040 0.230 0.265 0.050 0.245 0.413 0.195 0.085 0.025 0.018 0.026 0.016 0.000 5.50 max 2.41 0.15 1.15 0.61 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l |
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