1 5 - elm529977a - s g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit maximum junction - to - a mbient r ja 62.5 c /w parameter symbol limit unit drain-source voltage vds 6 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 12 a t a = 7 0 c 8 pulsed d rain current idm 3 0 a avalanche current ias 15 a power dissipation tc = 25 c pd 40 w t c = 7 0 c 15 j unction and storage temperature range tj , tstg - 55 to 150 c elm529977a - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 6 0 v ? id = 12 a ? rds (on) = 118 m (vgs = 10 v) ? rds (on) = 130 m (vgs = 4.5 v) single n-channel mosfet pin no. pin name 1 gate 2 drain 3 source pin configuration c ircuit to - 2 52-3 (top vi ew) s g d 1 3 2 t a b t a = 25 c . u nless otherwise noted.
2 5 - elm529977a - s electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 6 0 v zero g ate voltage drain current idss vds = 60 v, vgs = 0v 1 a vds = 6 0 v, vgs = 0v, t a = 8 5 c 5 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 10 0 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 0.7 2.5 v on s tate drain current id(on) vgs = 4.5 v, vds = 5v 30 a static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 8 a 118 m vgs = 4.5 v, id = 6 a 130 forward transconductance gfs vds =1 5 v, i d = 5.3 a 12 s diode forward voltage vsd is= 2 a , vgs = 0v 0.8 1.2 v max. body - d iode continuous c urrent is 12 a dynamic parameters input capacitance c iss vgs = 0v, vds = 2 5 v, f = 1mh z 480 pf output capacitance c oss 50 pf reverse transfer capacitance c r ss 35 pf switching parameters total gate charge q g vgs = 4.5 v, vds = 48 v, id = 5 a 6 12 nc gate - s ource charge q gs 2 nc gate - d rain charge q gd 3 nc turn - o n delay time t d (on) vgs = 10 v, vds = 30 v , rl=6 id = 5 a, rgen = 3.3 6 12 ns turn - o n rise t ime t r 6 12 ns turn - o ff delay time t d ( of f ) 12 20 ns turn - o ff fall t ime t f 4 10 ns single n-channel mosfet t a = 25 c . u nless otherwise noted.
3 5 - elm529977a - s typical electrical and thermal characteristics single n-channel mosfet a f n 9 9 7 7 6 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l . 2 0 1 2 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 5 - elm529977a - s single n-channel mosfet a f n 9 9 7 7 6 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l . 2 0 1 2 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 5 - elm529977a - s single n-channel mosfet test circuit and waveform a f n 9 9 7 7 6 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j u l . 2 0 1 2 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
|
