powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 1 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information 60v p - channel enhancement mode mosfet powerdi product summary v (br)dss r ds(on) max i d max t a = + 25c - 6 0v 2 5 m @ v gs = - 10 v - 7.7 a 3 3 m @ v gs = - 4.5 v - 6 .8 a description and applications this mosfet is designed to meet the stringen t requirements of automotive applications. it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device ( note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering information (note 5 ) p art number case packaging dm p 6023 l fg q - 7 powerdi ? 3333 - 8 2 , 0 00 /tape & reel dm p6023 lfg q - 13 powerdi ? 3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.c om/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm ch lorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/product_compliance_definitions. html 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information top view bottom view p ower di ? 3333 - 8 p23 = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 3 = 201 3 ) ww = week code (01 ~ 53) equivalent circuit p23 y yww s s s g d d d d pin 1 d s g
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 2 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 6 0 v gate - source voltage v gss 20 v continuous drai n current (note 7 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 7.7 - 6.2 a t<10s t a = + 25c t a = + 70c i d - 10.3 - 8.2 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm - 55 a maximum continuous body diode f orward current (note 6 ) i s - 2.2 a a valanche current , l = 0. 1 mh i as - 35.5 a avalanche energ y, l = 0. 1 mh e as 62.9 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 1.0 w thermal resistance, junc tion to ambient (note 6 ) s teady s tate r ? ja 1 23 c/w t<10s 6 9 total power dissipation (note 7 ) p d 2. 1 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ? ja 60 c/w t<10s 34 thermal resistance, junction to case (note 7 ) r ? j c 6. 3 o perating and storage temperature range t j, t stg - 55 to +150 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown vol tage bv dss - 6 0 gs = 0v, i d = - 250a j = +25c i dss ds = - 6 0 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 1 ds = v gs , i d = - 250 a ds (on) gs = - 10 v, i d = - 5 a gs = - 4 .5 v, i d = - 4 a diode forward voltage v sd gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss ds = - 3 0 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g ds = - 3 0 v, i d = - 5 a total gate charge ( v g s = - 10 v ) q g gs gd d( on ) gs = - 10 v , v ds = - 3 0 v , r g = 3 d = - 5 a turn - on rise time t r d( off ) f rr ? ? f = - 5 a, di/dt = 1 0 0a/s rr ? ? notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, si ngle sided. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 3 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = -2.8v gs v = -3.0v gs v = -3.5v gs v = -4.5v gs v = -10v gs v = -5.0v gs v = -4.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 5 10 15 20 25 30 v = -4.5v gs v = -10v gs v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 2 4 6 8 10 12 14 16 18 20 i = -5.0a d i = -4.0a d i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -5a gs d
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 4 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 - 50 - 25 0 25 50 75 100 125 150 - i =1ma d - i = 250a d v , drain - source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d t = 150c t = 2 5c j(max) a v = - 10v single pulse gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.01 0.1 1 10 100 0.1 1 10 100 v gs(th) , gate threshold voltage (v) i d , drain current ( a ) t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 v = 5v i = a gs d -4. -5 v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 10 typical junction capacitance ds 100 1000 10000 0 5 10 15 20 25 30 35 40 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 11 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 v = -30v i = -5a ds d
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 5 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information r ? ja = 127 c/w t1, pulse duration times (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 127 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse 0.001 0.01 0.1 1 1e-04 0.001 0.01 0.1 1 10 100 1000 d = 0.9
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 6 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information package outline dimensions please see http://www.diodes.com/package - o utlines.html for the latest version. powerdi ? 3333 - 8 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi ? 3333 - 8 powerdi ? 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e3 0 .79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? l 0.35 0.45 0.40 l1 ? ? ? ? z ? ? ? ? all dimensions in mm dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) 1 8 e3 e4 x3 y3 x y c y1 y2 x1 x2 1 8
powerdi is a registered trademark of diodes incorporated . dm p6023lfg q document number: d s 38647 rev. 1 - 2 7 of 7 www.diodes.com march 2016 ? diodes incorporated d mp6023lfg q advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modif ications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any pro duct described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of su ch use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of an y products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless a gainst all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more unit ed states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple la nguages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life supp ort devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. suppor t or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.d iodes.com
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