MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 description these n - channel enhancement mode power field effect transistors are using trench dmos technology. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency fast switching applications. features ? 30v, 90 a, rds(on) = 2.6 m@vgs = 10 v ? improved dv/dt capability ? fast switching ? 100% eas guaranteed ? rohs compliant package applications ? mb / vga / vcore ? pol applications ? smps 2nd sr packing & order information shipping 80/tube ; 2,500/box to - 252 package graphic symbol
MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 maximum ratings and electrical characteristics absolute maximum ratings (t a =25c unless otherwise noted) symbol parameter value unit v ds drain - source voltage 3 0 v v gs gate - source voltage 20 v i d drain current - continuous ( t c =2 5c ) 90 a drain current - continuous ( t c = 100 c ) 57 a i dm drain current - pulsed 1 360 a eas single pulse avalanche energy 2 180 mj i as single pulse avalanche current 2 60 a p d power dissipation (t c =25c) 100 w power dissipation - derate above 25 c 0. 8 w/ c t j operating junction temperature range - 55 to +1 50 c t stg storage temperature range - 55 to +1 50 c thermal c haracteristics symbol parameter typ. max . unit s r j a thermal resistance junction to ambient -- 62 c /w r j c thermal resistance junctio n to case -- 1.25 electrica l characteristics (tj=25 , unless otherwise noted) off characteristics symbol parameter test conditions min typ. max. unit s bv dss drain - source breakdown voltage v g s = v gs , i d = 250 u a 30 v bv dss / tj bv dss tempera ture coefficient reference to 25 c , i d = 1ma 0.0 3 v/ c i g ss gate - source leakage current v d s = 0 v , v gs = 20 v 100 na i dss drain - source leakage current v d s = 30 v , v gs = 0 v , t j = 2 5 c v d s = 24 v , v gs = 0 v , t j = 12 5 c 1 10 u a o n characteristics symbol parameter test conditions min typ. max. unit s r ds(on) drain - s ource on - resistance 3 v g s = 10 v, i d = 30 a v g s = 4.5 v , i d = 15 a 1.9 2.5 2.6 3.4 m v gs (th) gate threshold voltage v ds = v gs , i d = - 250a 1 .2 1.6 2.5 v v gs (th) v gs (th) temperature coefficient v ds = v gs , i d = - 250a - 5 mv/ c g fs forward tranconductance v d s = 10 v , i d = 2 a 1 6 s
MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 dynamic characteristics symbol parameter test c onditions min typ. max. unit s q g total gate charg e 3,4 v ds = 15 v , i d = 2 4 a, v g s = 4.5 v -- 40 75 nc q gs gate - source charge 3,4 -- 6 12 nc q g d gate - drain charge 3,4 -- 19 35 nc t d(on) turn - on delay time 3,4 i d = 1 a , r g = 1 , v g s = 10 v , v d d = 15 v -- 20 40 ns t r rise time 3,4 -- 32 60 ns t d(off) turn - off delay time 3,4 -- 75 130 ns tf fall time 3,4 -- 28 55 ns c iss input capacitance v ds = 25 v f = 1 mhz , v g s = 0 v -- 4800 8000 pf c oss output capacitance -- 735 1300 pf c rss reverse tra nsfer capacitance -- 420 800 pf r g gate charge v ds = 0 v , f = 1 mhz , v g s = 0 v -- 1.6 3.5 drain - source diode characteristics symbol parameter test conditions min typ. max . unit s i s continuous source current v g = v d = 0 v , force current -- -- 90 a i sm pulsed source current 3 -- -- 180 a v sd diode forward voltage 3 v gs = 0 v , i s = 1 a , tj = 25 c -- -- 1 v trr reverse recovery time v ds = 0 v,i s = 1 a , di/dt=100a/s , tj = 25 c -- 49 85 ns qrr reverse recovery charge -- 18 35 nc note : 1.repetitive rating : pulsed width limited by maximum junction temperature. 2. vdd=25v,vgs=10v,l=0.1mh,ias=60a.,rg=25 ,starting tj=25 . 3.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2%. 4.essentially independent of operating temperature.
MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 characteristics curve fig.1 - continuous drain current vs. tc fig. 2 - normalized rdson vs. tj fig.3 - normalized vth vs. tj fig.4 - gate charge waveform fig.5 - normalized transient impedance fig.6 - maximum safe operation area
MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 characteristics curve fig.7 - switching time waveform fig.8 - eas waveform
MSD39N60 30v n - channel mosfets publication order number: [ MSD39N60 ] ? bruckewell technology corporation rev. a - 201 6 disclaimer all product, product specifications and data are subject to c hange without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
|
