p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features *50 volt v ds *r ds(on) =10 w * low threshold absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -50 v continuous drain current at t amb =25c i d -175 ma pulsed drain current i dm -520 ma gate source voltage v gs 20 v power dissipation at t amb =25c p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -50 v i d =-0.25ma, v gs =0v gate-source threshold voltage v gs(th) -0.8 -2.0 v id=-1ma, v ds = v gs gate-body leakage i gss 10 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -15 -60 -100 m a m a na v ds =-50v, v gs =0v v ds =-50v, v gs =0v, t=125c (2) v ds =-25v, v gs =0v static drain-source on-state resistance (1) r ds(on) 10 w v gs =-5v,i d =-100ma forward transconductance (1)(2) g fs 50 ms v ds =-25v,i d =-100ma input capacitance (2)(4) c iss 40 pf common source output capacitance (2)(4) c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2)(4) c rss 6pf turn-on delay time (2)(3)(4) t d(on) 10 ns v dd ? -30v, i d =-270ma rise time (2)(3)(4) t r 10 ns turn-off delay time (2)(3)(4) t d(off) 18 ns fall time (2)(3)(4) t f 25 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator ( 4 ) e-line to92 compatible ZVP4105A 3-435 d g s
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