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| click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? improved ? direct ? replacement ? for ? siliconix ? & ? national ? 2n5912 ? low ? noise ? (10khz) ? e n ~ ? 4nv/ hz ? high ? transconductance ? (100mhz) ? g fs ? ? 4000s ? absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ?\ 55c ? to ? +135c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ? (total) ? 500mw ? maximum ? currents ? gate ? current ? 50ma ? maximum ? voltages ? gate ? to ? drain ?\ 25v ? gate ? to ? source ?\ 25v ? ?? ?? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v gs1 ? ? ? v gs2 ? | ? differential ? gate ? to ? source ? cutoff ? voltage ? \\? \\? 15 ? mv ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????????? ? ? |v gs1 ? ? ? v gs2 ? | ? / ?? t ? ? differential ? gate ? to ? source ? cutoff ?? voltage ? change ? with ? temperature ? \\? \\? 40 ? v/c ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????? t a ? = ?\ 55c ? to ? +125c ? i dss1 ?? / ? i dss2 ? ? gate ? to ? source ? saturation ? current ? ratio ? 0.95 ? \\? 1 ? % ? v ds ? = ? 10v, ? v gs ? = ? 0v ? |i g1 ? ? ? i g2 ? | ? differential ? gate ? current ? \\? \\? 20 ? na ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????? t a ? = ? +125c ?? g fs1 ? / ? g fs2 ? ? forward ? transconductance ? ratio 2 ? 0.95 ? \\? 1 ? % ? v ds ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 1khz ? cmrr ? common ? mode ? rejection ? ratio ? \\? 85 ? \\? db ? v dg ? = ? 5v ? to ? 10v, ? i d ? = ? 5ma ????????? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? gate ? to ? source ? breakdown ? voltage ?\ 25 ? \\? ? ? v ? ? i g ? = ?\ 1a, ? v ds ? = ? 0v ? v gs ( off ) ? gate ? to ? source ? cutoff ? voltage ?\ 1 ? \\? \ 5 ? v ds ? = ? 10v, ? i d = ? 1na ? v gs ( f ) ? gate ? to ? source ? forward ? voltage ? \\? 0.7 ? \\? i g ? = ?? 1ma, ? v ds ? = ? 0v ? v gs ? gate ? to ? source ? voltage ?\ 0.3 ? \\? \ 4 ? v dg ? = ? 10v, ? i g ? = ? 5ma ? i dss ? gate ? to ? source ? saturation ? current 3 ? 7 ? \\? 40 ? ma ? v ds ? = ? 10v, ? v gs ? = ? 0v ? i gss ? gate ? leakage ? current 3 ? \\? \ 1 ?\ 50 ?? pa ? v gs ? = ?\ 15v, ? v ds ? = ? 0v ? i g ? gate ? operating ? current ? \\? \ 1 ?\ 50 ? v dg ? = ? 10v, ? i d ? = ? 5ma ? g fs ? forward ? transconductance ? 4000 ? \\? 10000 ?? s ? ? ? v dg ? = ? 10v, ? i d = ? 5ma ? 4000 ? \\? 10000 ? g os ? output ? conductance ? \\? \\? 100 ? \\? \\? 150 ? c iss ? input ? capacitance ? \\? \\? 5 ? pf ? ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 1mhz ? c rss ? reverse ? transfer ? capacitance ? \\? \\? 1.2 ? nf ? noise ? figure ? \\? \\? 1 ? db ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 10khz, ? r g ? = ? 100k ? e n ? equivalent ? input ? noise ? voltage ? \\? 7 ? 20 ? nv/ hz ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 100hz ? \\? 4 ? 10 ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 10khz ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired ????? 2. ? pulse ? test: ? pw ?? 300s ? duty ? cycle ?? 3% 3. ? assumes ? smaller ? value ? in ? numerator ? ? ? LS5912 monolithic dual n-channel jfet linear s y stems re p laces discontinued siliconix & national 2n5912 LS5912 applications: ? wideband differential amps ? high-speed,temp-compensated single- ended input amps ? high-speed comparators ? impedance converters and vibrations detectors . the LS5912 are monolithic dual jfets. the monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. these devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. the LS5912 is a direct replacement for discontinued siliconix and national 2n5912. the 8 pin p-dip provides ease of manufacturing, and the symmetrical pinout prev ents improper orientation. (see packaging information). please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx available packages: LS5912 in pdip LS5912 available as bare die
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Price & Availability of LS5912
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