1 5 - elm14354aa - n g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient t 10s r ja 31 40 c /w 1 maximum junction - to - a mbient steady-state 59 7 5 c /w 1, 4 maximum junction - to - l ead steady-state r jl 16 24 c /w parameter symbol limit unit note drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 23 a t a = 10 0 c 14 pulsed d rain current idm 174 a 3 avalanche current ias 37 a 3 repetitive avalanche energy l=0.1mh eas 68 mj 3 vds spike 100ns vspike 36 v power dissipation t c = 25 c pd 3.1 w 2 t c = 10 0 c 1.2 j unction and storage temperature range tj , tstg - 55 to 150 c elm14354aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 3 0v ? id = 23 a (vgs = 10 v) ? rds (on) < 3.7 m (vgs = 10 v) ? rds (on) < 5.3 m (vgs = 4 .5v) pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 s g d single n-channel mosfet t a = 25 c . u nless otherwise noted.
2 5 - single n-channel mosfet electrical characteristics note : 1. the value of r j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta=25c. the value in any given application depends on the user's specific board design. 2. the power dissipation pd is based on tj(max)=150c, using 10s junction-to-ambient thermal resistance. 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial tj=25c. 4. the r j a is the sum of the thermal impedence from junction to lead r j a l and lead to ambient. 5. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. 6. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of tj(max)=150c. the soa curve provides a single pulse rating. t a = 25 c . u nless otherwise noted. elm14354aa - n parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 30 v, vgs = 0v 1 a t a = 55 c 5 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.2 1.8 2 .2 v static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, id = 20 a 3.0 3.7 m t a = 125 c 4.1 5.0 vgs = 4 .5v, id = 2 0 a 4.1 5.3 m forward transconductance gfs vds = 5v, id = 2 0 a 105 s diode forward voltage vsd i s = 1a, vgs = 0v 0.7 1.0 v max. body - d iode continuous c urrent is 4 a dynamic parameters input capacitance c iss vgs = 0v, vds = 15 v, f = 1mh z 2010 pf output capacitance c oss 898 pf reverse transfer capacitance c r ss 124 pf gate resistance r g vgs = 0v, vds = 0v, f = 1mhz 0.9 1.8 2.7 switching parameters total gate charge (10v) q g vgs = 10 v, vds = 15 v, id = 20 a 36 49 nc total gate charge (4.5v) 17 23 nc gate - s ource charge q gs 6 nc gate - d rain charge q gd 8 nc turn - o n delay time t d (on) vgs = 10 v, vds = 15 v r l = 0.75 , rgen = 3 7.5 ns turn - o n rise t ime t r 4.0 ns turn - o ff delay time t d ( of f ) 37.0 ns turn - o ff fall t ime t f 7.5 ns body diode reverse recovery time t rr if = 20 a, dif/dt = 5 00a / s 14.0 ns body diode reverse recovery charge q rr if = 20 a, dif/dt = 5 00a / s 20.3 nc
3 5 - single n-channel mosfet typical electrical and thermal characteristics elm14354aa - n ao4354 typical electrical and thermal characteristics 0 1 0 20 30 40 50 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note 5) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m ? ? ? ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note 5 ) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note ) v g s =4.5v i d =20a v g s =10v i d =20a 25 ? c 125 ? c v d s =5v v g s =4.5v v g s =10v 0 2 0 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note 5) v g s =2.5v 3.5v 4 .5v 10v 3v 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note 5 ) 25 ? c 125 ? c (note 5 ) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m ? ? ? ? ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note 5 ) i d = 20a 25 ? c 125 ? c rev0: april 2012 www.aosmd.com page 3 of 5
4 5 - elm14354aa - n ao4354 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =20a t j(max) =150 ? c t c =25 ? c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 s 1ms dc r ds(on) t j(max) =150 ? c t c =25 ? c 100 s 10ms 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction -to - t a =25 ? c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z j a normalized transient t hermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note 6 ) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note 6 ) r ja =75 ? c/w figure 14: single pulse power rating junction -to - ambient (note 6 ) rev0: april 2012 www.aosmd.com page 4 of 5 single n-channel mosfet
5 5 - test circuit and waveform elm14354aa - n single n-channel mosfet ao4354 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: april 2012 www.aosmd.com page 5 of 5
|
