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dat ashee t www.rohm.com ? 2012 rohm co., ltd. all rights reserved. RE1C002ZP pch -20v -200ma small signal mosfet c/w l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *3 - - 833 l outline v dss - 20v emt3f r ds(on) (max.) 1.2 w i d - 200ma p d 150mw l features l inner circuit 1) low voltage drive(1.2v) makes this device ideal for partable equipment. 2) drive circuits can be simple. 3) built-in g-s protection diode. l packaging specifications type packaging taping l application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 3,000 drain - source voltage v dss - 20 v taping code tl marking yk l absolute maximum ratings (t a = 25c) parameter symbol value unit continuous drain current i d *1 ? 200 ma pulsed drain current i d,pulse *2 ? 800 ma power dissipation gate - source voltage v gss ? 10 v p d *3 150 mw junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c * 1 esd protection diode * 2 body diode (1) gate (2) source (3) drain (2) (1) (3) 1/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 each therminal mounted on a recommended land *4 pulsed l electrical characteristics (t a = 25c) ,unless otherwise specified parameter symbol conditions values unit min. typ. max. v drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 1ma - 20 - - m a gate - source leakage current i gss v gs = ? 10v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = - 20v, v gs = 0v - - - 1 v gate threshold voltage v gs (th) v ds = - 10v, i d = - 100ua - 0.3 - - 1 static drain - source on - state resistance r ds(on) *4 v gs = - 4.5v, i d = - 200ma - 0.8 1.0 1.5 v gs = - 1.8v, i d = - 100ma - 1.3 2.2 w v gs = - 1.5v, i d = - 40ma - 1.6 3.5 v gs = - 4.5v, i d = - 200ma, t j =125c v gs = - 1.2v, i d = - 10ma - 2.4 9.6 1.2 - 1.1 1.6 v gs = - 2.5v, i d = - 100ma - - ms transconductance g fs *4 v ds = - 10v, i d = - 200ma 200 - 2/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristics (t a = 25c) parameter symbol conditions values - 10 unit min. typ. max. pf - - 115 - - 6 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v output capacitance c oss v ds = - 10v turn - on delay time t d(on) *4 v dd ? - 10v, v gs = - 4.5v - 6 - ns rise time t r *4 i d = - 100ma - 4 - turn - off delay time t d(off) *4 r l = 100 w - 17 - fall time t f *4 - - 1.2 r g = 10 w - 17 - - - - 800 - - 100 i s *1 - t c = 25 ? c forward voltage v sd *4 - ma ma v gs = 0v, i s = - 200ma v l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. pulsed source current i sm *2 continuous source current 3/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristic curves fig.3 typical output characteristics(i) 0 20 40 60 80 100 120 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 0 0.05 0.1 0.15 0.2 0 2 4 6 8 10 t a =25oc pulsed v gs = - 4.5v v gs = - 2.5v v gs = - 1.8v v gs = - 1.5v v gs = - 1.2v v gs = - 1.0v 0 0.05 0.1 0.15 0.2 0 0.2 0.4 0.6 0.8 1 v gs = - 1.2v t a =25oc pulsed v gs = - 2.5v v gs = - 2.0v v gs = - 1.8v v gs = - 10v v gs = - 4.5v v gs = - 3.2v v gs = - 1.0v v gs = - 1.5v fig.1 power dissipation derating curve fig.2 drain current derating curve power dissipation : p d /p d max. [%] drain current dissipation : i d /i d max. (%) fig.4 typical output characteristics(ii) drain current : -i d [a] drain - source voltage : -v ds [v] drain - source voltage : -v ds [v] drain current : -i d [a] junction temperature : t j [ c] junction temperature : t j [ c] 4/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristic curves 0 20 40 60 -50 0 50 100 150 v gs = 0v i d = - 1ma pulsed 0 1 2 3 -50 0 50 100 150 v ds = - 10v i d = - 100ua pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 t a =125oc t a =75oc t a =25oc t a = - 25 oc v ds = - 10v pulsed 0.1 1.0 0.01 0.1 1 t a = - 25 oc t a =25oc t a =75oc t a =125oc v ds = - 10v pulsed fig.8 transconductance vs. drain current fig.5 breakdown voltage vs. junction temperature drain - source breakdown voltage : -v (br)dss [v] junction temperature : t j [ c] fig.6 typical transfer characteristics drain current : -i d [a] gate - source voltage : -v gs [v] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : -v gs(th) [v] junction temperature : t j [ c] drain current : -i d [a] transconductance : g fs [s] 5/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristic curves 0 1 2 -50 -25 0 25 50 75 100 125 150 v gs = - 4.5v i d = - 200ma pulsed 0 1 2 3 4 5 0 2 4 6 8 10 t a =25oc pulsed i d = - 0.2a i d = - 0.01a 100 1000 10000 0.001 0.01 0.1 1 . t a =25oc pulsed v gs = - 1. 2v v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v 100 1000 10000 0.001 0.01 0.1 1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = - 4.5v pulsed fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [ w ] gate - source voltage : -v gs [v] fig.10 static drain - source on - state resistance vs. drain current(i) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] fig.11 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.12 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] 6/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristic curves 100 1000 10000 0.001 0.01 0.1 1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = - 2.5v pulsed 100 1000 10000 0.001 0.01 0.1 1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = - 1.8v pulsed 100 1000 10000 0.001 0.01 0.1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = - 1.5v pulsed 100 1000 10000 0.001 0.01 0.1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = - 1.2v pulsed fig.13 static drain-source on-state resistance vs. drain current(iii) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] fig.14 static drain - source on - state resistance vs. drain current(iv) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] fig.15 static drain - source on - state resistance vs. drain current(v) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] fig.16 static drain - source on - state resistance vs. drain current(vi) static drain - source on-state resistance : r ds(on) [ w ] drain current : -i d [a] 7/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l electrical characteristic curves 1 10 100 1000 0.01 0.1 1 10 100 t a =25oc f=1mhz v gs =0v c oss c rss c iss 1 10 100 1000 0.01 0.1 1 t r t f t d(on) t d(off) t a =25oc v dd = - 10v v gs = - 4.5v r g =10 w pulsed 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.18 switching characteristics fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : -v ds [v] switching time : t [ns] drain current : -i d [a] fig.19 source current vs. source drain voltage source current : -i s [a] source-drain voltage : -v sd [v] 8/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms l notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 9/10 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet RE1C002ZP l dimensions (unit : mm) dimension in mm/inches emt3f patterm of terminal position areas d e e e h a b x s a l c lp a2 a1 s e1 e b2 l1 a min max min max a 0.65 0.85 a1 0.00 0.10 0 0.004 a2 0.60 0.80 0.024 0.031 b 0.21 0.36 0.008 0.014 c 0.08 0.18 0.003 0.007 d 1.50 1.70 0.059 0.067 e 0.76 0.96 0.03 0.038 e h e 1.50 1.70 0.059 0.067 l lp 0.35 0.55 0.014 0.022 x - 0.10 - 0.004 min max min max e1 - 1.05 - 0.041 b2 - 0.46 - 0.018 l1 - 0.65 - 0.026 dim 0.50 0.02 0.37 0.015 milimeters inches dim milimeters inches 10/10 2012.08 - rev.a downloaded from: http:///
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, i s permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement witho ut notice. the content specied herein is for the purpose of introducing rohm's produ cts (hereinafter "products"). if you wish to use any such product, please be sure to refer to the spec ications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the periph eral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information spec ied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typica l functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispu te arising from the use of such technical information. the products specied in this document are intended to be used with general-us e electronic equipment or devices (such as audio visual equipment, ofce-automati on equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation toler ant. while rohm always makes efforts to enhance the quality and reliability of its pr oducts, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the produ cts safety measures to guard against the possibility of physical injury, re or any other damage cause d in the event of the failure of any product, such as derating, redundancy, re control and fai l-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of th e prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medic al instrument, transportation equipment, aerospace machinery, nu clear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsi bility in any way for use of any of the products for the above special purposes. if a product is intended to be used for an y such special purpose, please contact a rohm sales representative befor e purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be req uired to obtain a license or permit under the law. downloaded from: http:///

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