elektronische bauelemente czd41c npn epitaxial planar silicon transistor 13-oct-2014 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features monolithic construction with builtCin baseCemitte r resistors straight lead version in plastic sleeves (C1 su ffix) designed for general purpose amplifier and low sp eed s witching applications. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 5 v collector current i c 6 a collector power dissipation p c 1.25 w junction and storage temperature t j ,t stg 150, -65 ~ 150 electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 100 - - v i c =100 a, i e =0 collector-emitter breakdown voltage v ceo(sus) 100 - - v i c =30ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i ceo - - 50 a v cb =60v, i e =0 emitter cut-off current i ebo - - 0.5 ma v eb =5v, i c =0 30 - - v ce =4v, i c =0.3a dc current gain 1 h fe 15 - 75 v ce =4v, i c =3a collector-emitter saturation voltage 1 v ce(sat) - - 1.5 v i c =6a, i b =0.6a base-emitter saturation voltage 1 v be(on) - - 2 v v ce =4v, i c =6a transition frequency f t 3 - - mhz v ce =10v, i c = 500ma, f=1mhz to-252 (d-pack) a c d n o p g e f h k j m b millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.30 ref. b 4.95 5.50 k 0.64 1.14 c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2 .80 ref p 0.58ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente czd41c npn epitaxial planar silicon transistor 13-oct-2014 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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