1 power transistors 2sb954, 2sb954a silicon pnp epitaxial planar type for power amplification n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C60 C80 C60 C80 C5 C2 C1 30 2 150 C55 to +150 unit v v v a a w ?c ?c 2sb954 2sb954a 2sb954 2sb954a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter voltage transition frequency turn-on time storage time fall time symbol i ceo i ces i ebo v ceo h fe1 * h fe2 v ce(sat) v be f t t on t stg t f conditions v ce = C30v, i b = 0 v ce = C60v, i b = 0 v ce = C60v, v be = 0 v ce = C80v, v be = 0 v eb = C5v, i c = 0 i c = C30ma, i b = 0 v ce = C4v, i c = C 0.2a v ce = C4v, i c = C1a i c = C1a, i b = C 0.125a v ce = C4v, i c = C1a v ce = C5v, i c = C 0.2a, f = 10mhz i c = C1a, i b1 = C 0.1a, i b2 = 0.1a, v cc = C50v min C60 C80 70 15 typ 30 0.5 1.2 0.3 max C300 C300 C200 C200 C1 250 C1 C1.3 unit m a m a ma v v v mhz m s m s m s 2sb954 2sb954a 2sb954 2sb954a 2sb954 2sb954a * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2sb954, 2sb954a p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (4) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 6 ? ? ? ? ? 0 ?.5 ?.0 ?.5 ?.0 ?0.5 t c =25?c i b =?0ma ?0ma ?5ma ?0ma ?0ma ?ma ?ma ?ma ?ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 ?.0 ?.6 ?0.4 ?.2 ?0.8 0 ?0 ? ? ? ? t c =100?c 25?c v ce =?v ?5?c base to emitter voltage v be ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 25?c ?5?c t c =100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 t=10ms i cp i c non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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