cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 1/7 MTN7002KC3 cystek product specification n-channel logic level enha ncement mode mosfet MTN7002KC3 bv dss 60v i d 230ma r dson @v gs =10v 1.2 typ. r dson @v gs =4.5v 1.8 typ. description the MTN7002KC3 is a n-channel enhancement-mode mosfet. features ? low on-resistance ? high esd ? high speed switching ? low-voltage drive ? easily designed drive circuits ? easy to use in parallel ? pb-free package symbol outline MTN7002KC3 sot-523 g gate s source d drain s d d g s g ordering information device package shipping marking MTN7002KC3 sot-523 (pb-free) 3000 pcs / tape & reel 72
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 2/7 MTN7002KC3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous i d 230 ma drain current pulsed i dp 800 *1 ma continuous i dr 230 ma drain reverse current pulsed i drp 800 *1 ma total power dissipation p d 150 *2 mw esd susceptibility 1550 *3 v channel temperature t ch +150 c storage temperature tstg -55~+150 c thermal characteristics parameter symbol value unit thermal resistance, junction to ambient r ja 833 *2 c/w note : *1. pulse width 300 s, duty cycle 2% *2. when the device is mounted on a glass epoxy board with area measuring 1 ? 0.75 ? 0.62 inch *3. human body model, 1.5k in series with 100pf electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv dss* 60 - - v gs =0, i d =10 a v gs(th) 1 1.6 2.5 v v ds =v gs , i d =250 a i gss - - 10 v gs =20v, v ds =0 i dss - - 1 a v ds =60v, v gs =0 - 1.2 2.5 i d =500ma, v gs =10v r ds(on)* - 1.8 3 i d =100ma, v gs =4.5v g fs 100 240 - ms v ds =10v, i d =100ma c iss - 30.6 - c oss - 5.5 - c rss - 4 - pf v ds =10v, v gs =0, f=1mhz t d(on) - 3 - t r - 5 - t d(off) - 14 - t f - 9 - ns v ds =30v, i d =200ma, v gs =10v, r g =6 qg - 1.1 - qgs - 0.1 - qgd - 0.23 - nc v ds =30v, i d =200ma, v gs =10v *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 3/7 MTN7002KC3 cystek product specification typical characteristics typical output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0246810 v ds , drain-source voltage(v) i d , drain current(a) 3.5v 4v 3v 2.5v 10v,6v,5v, 4.5v typical transfer characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0246810 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v static drain-source on-state resistance vs drain current 1 10 100 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =2.5v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=125c static drain-source on-state resistance vs gate-source voltage 0 2 4 6 8 10 024681 0 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =100ma drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =100ma
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 4/7 MTN7002KC3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a power derating curve 0 20 40 60 80 100 120 140 160 0 50 100 150 200 t a , ambient temperature() p d , power dissipation(mw) maximum drain current vs junction temperature 0 0.05 0.1 0.15 0.2 0.25 0.3 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =833c/w
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 5/7 MTN7002KC3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 6/7 MTN7002KC3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) 183 c 60-150 seconds 217 c 60-150 seconds ? time (t l ) peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c320c3 issued date : 2013.08.23 revised date : page no. : 7/7 MTN7002KC3 cystek product specification sot-523 dimension marking: *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0079 0.0157 0.20 0.40 i *0.0197 - *0.50 - b 0.0591 0.0669 1.50 1.70 j 0.0610 0.0650 1.55 1.65 c 0.0118 0.0197 0.30 0.50 k 0.0276 0.0315 0.70 0.80 d 0.0295 0.0335 0.75 0.85 l 0.0224 0.0248 0.57 0.63 e 0.0118 0.0197 0.30 0.50 m 0.0020 0.0059 0.05 0.15 f 0.0039 0.0118 0.10 0.30 n 0.0039 0.0118 0.10 0.30 g 0.0039 0.0118 0.10 0.30 o 0 0.0031 0 0.08 h *0.0197 - *0.50 - notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . n h f 12 3 j a b c d 72 g i e style: pin 1.gate 2.source 3.drain 3-lead sot-523 plastic surface mounted package cystek package code: c3 k l o m
|
