1. product profile 1.1 general description 140 w ldmos power transistor for industrial, sc ientific and medical (ism) applications at frequencies from 2400 mhz to 2500 mhz. the blf2425m8l140 and BLF2425M8LS140 are designed for high-power cw applications and are assembled in high performance ceramic packages, available in eared and earless versions 1.2 features and benefits ? high efficiency ? high power gain ? excellent ruggedness ? excellent thermal stability ? integrated esd protection ? designed for broadband operation (2400 mhz to 2500 mhz) ? internally matched ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications in the frequency range from 2400 mhz to 2500 mhz blf2425m8l140; BLF2425M8LS140 power ldmos transistor rev. 1 ? 27 august 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c; i dq = 1300 ma in a common source class-ab production test circuit. test signal f v ds p l(av) g p ? d (mhz) (v) (w) (db) (%) cw 2450 28 140 19 56
blf2425m8l140_2425m8ls140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 27 august 2013 2 of 11 nxp semiconductors blf2425m8l(s)140 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol blf2425m8l140 (sot502a) 1drain 2gate 3source [1] BLF2425M8LS140 (sot502b) 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version blf2425m8l140 - flanged ceramic package; 2 mounting holes; 2 leads sot502a BLF2425M8LS140 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 - ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 125 w 0.28 k/w
blf2425m8l140_2425m8ls140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 27 august 2013 3 of 11 nxp semiconductors blf2425m8l(s)140 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf2425m8l140 and BLF2425M8LS140 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1300 ma; p l = 140 w (cw); f = 2450 mhz. 7.2 impedance information table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 5 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -41- a i gss gate leakage current v gs =11v; v ds = 0 v - - 500 na g fs forward transconductance v ds =10v; i d =10.8a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -69- m ? table 7. rf characteristics test signal: cw; f = 2450 mhz; v ds = 28 v; i dq = 1300 ma; t case = 25 ? c unless otherwise specified in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 140 w 17.5 19 - db rl in input return loss p l =140 w - ? 16 ? 8db ? d drain efficiency p l =140 w 51 56 - % table 8. typical impedance measured load-pull data. typical valu es unless otherwise specified. i dq =1300ma; v ds =28v. z s and z l defined in figure 1 . f z s z l (mhz) (? ) ( ? ) 2400 3.7 ? 5.4j 1.3 ? 1.5j 2450 6.9 ? 5.0j 1.5 ? 1.6j 2500 8.7 ? 2.0j 1.5 ? 1.6j
blf2425m8l140_2425m8ls140 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 27 august 2013 4 of 11 nxp semiconductors blf2425m8l(s)140 power ldmos transistor 7.3 circuit information fig 1. definition of transistor impedance 001aaf059 drain z l z s gate printed-circuit board (pcb): rogers 4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 2. component layout for application circuit table 9. list of components for test circuit see figure 2 . component description value remarks c1, c4, c5 multilayer cerami c chip capacitor 15 pf atc100b c2, c6 multilayer ceramic chip capacitor 10 ? f, 50 v murata c3 multilayer ceramic ch ip capacitor 100 nf murata c7 multilayer ceramic ch ip capacitor 62 pf atc100b c8 electrolytic capacitor 22 ? f, 63 v r1 resistor 10 ? smd 0805; bourns d d d & |