________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 1/7 UESD6V8L1F low capacitance single line esd protection diode array UESD6V8L1F dfn2 /fbp2 1.00.6 general description the UESD6V8L1F esd protection diode is designe d to replace multilayer varistors (mlvs) in portable applications such as cell phones, notebo ok computers, and pda?s. they feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degr adation when compared to mlvs. the UESD6V8L1F esd protection diode protects sensitive semiconductor components from damage or upset due to electros tatic discharge (esd) and other vo ltage induced transient events. the UESD6V8L1F is available in a dfn2/fbp2 1.00.6 (compatible with sod882) package with working voltages of 5 volt. it gives designer the flexibility to protect one unidi rectional line in applications where arrays are not practical. additionally, it may be ?sprinkled ? around the board in applications where board space is at a premium. it may be used to meet the esd immunity requirements of iec 61000-4-2, level 4 (15kv air, 8kv contact discharge). UESD6V8L1F is fabricated using dual diffusion technology offer low junction capacitance (20pf), which is required in high speed signal protection application. applications features cell phone handsets and accessories personal digital assistants (pda?s) notebooks, desktops, and servers portable instrumentation cordless phones digital cameras peripherals mp3 players transient protection for data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) small package for use in portable electronics suitable replacement for mlv?s in esd protection applications protect one i/o or power line; low clamping voltage stand off voltages: 5v; low leakage current solid-state silicon-avalanche technology small body outline dimensions: 1.0mm0.6mm pin configurations top view UESD6V8L1F dfn2/fbp2 1.00.6 (compatible with sod882)
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 2/7 UESD6V8L1F ordering information part number working voltage packaging type channel marking code shipping qty UESD6V8L1F 5.0v dfn2 1.0mm0.6mm 1 e2 5000/7 inch reel UESD6V8L1F 5.0v fbp2 1.0mm0.6mm 1 e2 5000/7 inch reel absolute maximum ratings rating symbol value units peak pulse power (tp = 8/20s) p pk 55 watts maximum peak pulse current (t=8/20s) i pp 10.8 amps esd per iec 61000-4-2 (air) esd per iec 61000-4-2 (contact) v pp 15 8 kv lead soldering temperature t l 260 (10 sec.) c operating temperature t j -55 to +125 c storage temperature t stg -55 to +150 c symbol definition parameter symbol maximum reverse peak pulse current i pp clamping voltage @ i pp v c working peak reverse voltage v rwm maximum reverse leakage current @ v rwm i r breakdown voltage @ i t v br test current i t forward current i f forward voltage @ i f v f peak power dissipation p pk max. capacitance @ v r = 0v, f = 1mhz c
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 3/7 UESD6V8L1F electrical characteristics (t=25c, device for 5.0v reverse stand-off voltage) parameter symbol condit ions min typ max unit reverse stand-off voltage v rwm 5 v reverse breakdown voltage v br it = 1ma 6 6.8 7.2 v reverse leakage current i r vrwm = 5v, t=25c 0.1 a i pp = 1a, t p = 8/20 s 7 i pp =2a, t p = 8/20 s 8 clamping voltage v c i pp =5a, t p = 8/20 s 10.8 v forward voltage v f i f = 10ma 0.8 v junction capacitance c j v r = 0v, f = 1mhz 17 20 pf junction capacitance c j v r = 2.5v, f = 1mhz 8 10 pf typical operating characteristics non-repetitive peak pulse power vs. pulse time clamping voltage vs. peak pulse current 0.1 1 10 100 1000 0.01 0.1 1 10 pulse duration - tp(us) peak pulse power - ppk(kw) 012345 6 7 8 9 10 11 waveform parameters: tr=8us td=20us clamping voltage - vc (v) peak pulse current - ipp (a) forward voltage vs. forward current junc tion capacitance vs . reverse voltage 0123456 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 forward voltage-vf(v) forward current-if(a) 012345 0 5 10 15 20 25 capacitance-(pf) revers voltage-vr(v)
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 4/7 UESD6V8L1F applications information device connection options UESD6V8L1F esd protection diode is designed to protect one data, i/o, or power supply line. the device is unidirectional and may be used on lines where the signal polarity is above ground. the cathode dot should be placed towards the line that is to be protected. circuit board layout recommendations for suppression of esd good circuit board layout is critical for the s uppression of esd induced transients. the following guidelines are recommended: place the tvs near the input terminals or c onnectors to restrict transient coupling. minimize the path length between the tvs and the protected line. minimize all conductive loops including power and ground loops. the esd transient return path to ground should be kept as short as possible. never run critical signals near board edges. use ground planes whenever possible. for multilaye r printed-circuit boards, use ground vias. keep parallel signal paths to a minimum. avoid running protection conductors in parallel with unprotected conductor. minimize all printed-circuit board conductiv e loops including power and ground loops. avoid using shared transient return paths to a common ground point.
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 5/7 UESD6V8L1F package information outline drawing dfn2 1.00.6 dimensions millimeters inches symbol min max min max a 0.470 0.530 0.019 0.021 a1 0.000 0.050 0.000 0.002 b 0.200 0.300 0.008 0.012 d 0.950 1.075 0.037 0.042 e 0.550 0.675 0.022 0.027 e1 0.450 0.550 0.018 0.022 e 0.400 0.016 r 0.050 0.150 0.002 0.006 dimensions millimeters symbol min max a 0.40 - 0.50 a1 0.00 - 0.05 a3 0.125ref d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65bsc fbp2 1.00.6 dimensions millimeters inches symbol min max min max a 0.550 0.021 a1 0.010 0.070 0.000 0.003 b 0.275 0.325 0.011 0.013 d 0.950 1.050 0.037 0.041 d1 0.275 0.325 0.011 0.013 e 0.400ref 0.016ref e1 0.550 0.650 0.022 0.026 l 0.450ref 0.018ref
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 6/7 UESD6V8L1F land pattern notes: 1. compound dimension: 1.000.60: 2. unit: mm; 3. general tolerance0.025mm unless otherwise specified; 4. the layout is just for reference. tape and reel orientation
________________________________________________________________________ http://www.union-ic.com rev.06 apr.2010 7/7 UESD6V8L1F important notice the information in this document has been ca refully reviewed and is believed to be accurate. nonetheless, this document is subjec t to change without notice. union assumes no responsibility for any inaccuracies that may be contained in this document, and makes no commitment to update or to keep current the contained information, or to notify a person or organization of any update. union rese rves the right to make changes, at any time, in order to improve reliability, function or design and to attempt to supply the best product possible. union semiconductor, inc add: 7f, no. 5, bibo road, shanghai 201203 tel: 021-51097928 fax: 021-51026018 website: www.union-ic.com
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