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10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet flow 1 npc 650 v / 150 a switching with high speed components low voltage ride through (lvrt) reactive power capable improved rth (aln) substrat ups motor drive solar inverters 10f107nib150sg06m136f39 10p107nib150sg06m136f39y t j =25c, unless otherwise specified parameter symbol value unit buck igbt t s =80c 128 t c =80c 168 t s =80c 279 t c =80c 422 t sc t j 150c 5 s v cc v ge =15v 400 v buck diode t s =80c 125 t c =80c 170 t s =80c 241 t c =80c 365 t c =100c 1280 w power dissipation p tot dc forward current a t j = t jmax t p =10ms, sine halfewave a i f v rrm maximum junction temperature power dissipation v ge t jmax p tot short circuit ratings peak repetitive reverse voltage gateemitter peak voltage c v types maximum ratings condition features flow 1 17mm housing target applications schematic i fsm t jmax diode surge non repetitive forward currentmaximum junction temperature v 650 c collectoremitter break down voltagerepetitive peak collector current dc collector current v ce i crm i c 20 w a 450 v a 175 650175 t j = t jmax t j = t jmax t j = t jmax t p limited by t jmax 08 sep. 2015 / revision 5 copyright vincotech 1
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition boost igbt t s =80c 173 t c =80c 228 t s =80c 324 t c =80c 490 t sc t j 150c 6 s v cc v ge =15v 360 v boost inverse diode t s =80c 124 t c =80c 164 t s =80c 204 t c =80c 310 boost diode t j =25c t s =80c 120 t c =80c 161 t s =80c 203 t c =80c 307 thermal propertiesinsulation properties v is dc voltage t=2s 4000 v min 12,7 mm min 12,7 mm cti >200 650 175 600450 20 200 clearance insulation voltagecreepage distance t op operation temperature under switching condition power dissipation p tot t j = t jmax storage temperature t stg 40+125 c c maximum junction temperature t jmax 175 200 v ce v rrm peak repetitive reverse voltage a t j = t jmax dc forward current i f repetitive peak forward current i frm t p limited by t jmax a w v c v i frm a a t j = t jmax t p limited by t jmax i f peak repetitive reverse voltage i crm repetitive peak collector current t j = t jmax i c v ge t j = t jmax t jmax collectoremitter break down voltage t p limited by t jmax gateemitter peak voltagemaximum junction temperature short circuit ratings dc collector current power dissipation p tot va v c w a maximum junction temperature t jmax 175 v rrm dc forward current p tot power dissipation t j = t jmax repetitive peak forward current 600 comparative tracking index w 40+( t jmax 25) c 08 sep. 2015 / revision 5 copyright vincotech 2
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j [c] min typ max 25 4,2 5,1 5,6 150 25 1,38 1,94 2,22 150 2,26 25 0,0076 15025 300 150 25 147 150 149 25 30 150 34 25 197 150 219 25 18 150 27 25 1,53 150 2,45 25 1,69 150 2,68 thermal resistance chip to heatsink r th(j-s) phasechange material ? =3,4w/mk 0,34 k/w 25 1,67 1,7 150 2,01 25 160 150 25 104 150 157 25 59 150 97 25 5 150 10 25 6885 150 3093 25 0,92 150 2,07 thermal resistance chip to heatsink r th(j-s) phasechange material ? =3,4w/mk 0,39 k/w ns 9240 480274 none ma v vv nc mws pf ns a/s mws 940 2525 2015 15 0 0 0 15 650 c rss v f integrated gate resistor buck igbt gate emitter threshold voltagecollectoremitter cutoff current incl. diode peak reverse recovery current reverse recovery time input capacitance rise timeturnon energy loss per pulse collectoremitter saturation voltagereverse recovered energy peak rate of fall of recovery current characteristic values value conditions i ces r gint i ges v ge(th) v cesat output capacitance turnoff energy loss per pulse gateemitter leakage currentfall time turnoff delay time turnon delay time reverse transfer capacitance buck diode diode forward voltage gate charge e off t d(on) r gon =4 t r t d(off) t f e on r goff =4 f=1mhz v ce = v ge c ies q rr t rr q g c oss 160 650 150 150 480 25 0,0024150 na 350 reverse leakage current i r r gon =4 350 e rec i rrm reverse recovered charge 150 a 15 c a ( d i rf /d t ) max copyright vincotech 3 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j [c] min typ max characteristic values value conditions 25 5 5,8 6,5 150 25 1,05 1,46 1,85 150 1,65 25 0,0076 150 1200 25150 25 149 150 151 25 31 150 36 25 220 150 245 25 58 150 78 25 1,77 150 2,38 25 4,26 150 5,95 thermal resistance chip to heatsink r th(j-s) phasechange material ? =3,4w/mk 0,29 k/w 25 1,20 1,77 1,90 150 1,54 thermal resistance chip to heatsink r th(j-s) phasechange material ? =3,4w/mk 0,46 k/w 25 1,2 1,77 1,9 150 1,57 25 48 150 25 82 150 114 25 133 150 290 25 6 150 13 25 559 150 676 25 1,65 150 3,68 thermal resistance chip to heatsink r th(j-s) phasechange material ? =3,4w/mk 0,47 k/w f 3884 k k vincotech ntc reference bvalue b (25/100) tol. 1% 3964 25 25 bvalue b (25/50) none 100 25 25 4,5 350 150 60025 150 350 650 100 r gon =4 v ce = v ge diode forward voltage gate emitter threshold voltageturnoff delay time collectoremitter saturation voltage boost diode integrated gate resistor boost igbt reverse leakage current v f i r t r t d(on) e on q g 0 i rrm 20 f=1mhz 15 t d(off) q rr reverse recovery timepeak rate of fall of recovery current reverse recovery energy t rr e rec ma na vv 150 0,0024 150 r 100 =1486 rated resistance r thermistor mw 210 3,5 25 25 power dissipation constant power dissipation p r/r deviation of r100 100 % 274 nc 150 480 pf mw/k ns mws 0 15 i ges r goff =4 15 turnon delay time t f gate charge input capacitance c rss reverse transfer capacitance r gon =4 rise timediode forward voltage v f boost inverse diode e off output capacitance c oss c ies gateemitter leakage current v ge(th) r gint collectoremitter cutoff incl diode v cesat i ces peak reverse recovery currentreverse recovered charge turnoff energy loss per pulse fall time turnon energy loss per pulse 9240 940 576 21511 +4,5 mws c v a/s v a ns a ( d i rf /d t ) max copyright vincotech 4 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 1 igbt figure 2 igbt typical output characteristics i c = f( v ce ) i c = f( v ce ) at at t p = 350 s t p = 350 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical diode forward current as i c = f( v ge ) a function of forward voltage i f = f( v f ) at at t p = 350 s t p = 350 s v ce = 10 v buck typical output characteristics 0 100 200 300 400 500 0 1 2 3 4 5 v ce (v) i c (a) 0 30 60 90 120 150 0 2 4 6 8 10 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 100 200 300 400 0 1 2 3 4 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 100 200 300 400 500 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 5 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f( i c ) e = f( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a r goff = 4 figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f( i c ) e rec = f( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a buck e on high t e off high t e on low t e off low t 0 1 2 3 4 5 6 0 50 100 150 200 250 300 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 10 12 0 4 8 12 16 20 r g ( ) e (mws) e rec high t e rec low t 0 0,5 1 1,5 2 2,5 3 0 50 100 150 200 250 300 i c (a) e (mws) e rec high t e rec low t 0 0,5 1 1,5 2 2,5 3 0 4 8 12 16 20 r g ( ) e (mws) copyright vincotech 6 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f( i c ) t = f( r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a r goff = 4 figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f( i c ) t rr = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v buck t doff t f t don t r 0,00 0,01 0,10 1,00 0 50 100 150 200 250 300 i c (a) t (ms) t rr low t 0,00 0,04 0,08 0,12 0,16 0 4 8 12 16 20 r gon ( ) t rr (ms) t rr high t t doff t f t don t r 0,00 0,01 0,10 1,00 0 4 8 12 16 20 r g ( ) t (ms) t rr high t t rr low t 0,00 0,02 0,04 0,06 0,08 0,10 0,12 0 50 100 150 200 250 300 i c (a) t rr (ms) copyright vincotech 7 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f( i c ) q rr = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f( i c ) i rrm = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v buck i rrm high t i rrm low t 0 40 80 120 160 200 0 4 8 12 16 20 r gon ( ) i rrm (a) q rr high t q rr low t 0 2 4 6 8 10 12 0 4 8 12 16 20 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 40 80 120 160 200 0 50 100 150 200 250 300 i c (a) i rrm (a) q rr high t q rr low t 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 i c (a) q rr (mc) copyright vincotech 8 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor d i 0 /d t ,d i rec /d t = f( i c ) d i 0 /d t ,d i rec /d t = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f( t p ) z thjh = f( t p ) at at d = t p / t d = t p / t r thjh = 0,34 k/w r thjh = 0,39 k/w igbt thermal model values fwd thermal model values r (k/w) tau (s) r (k/w) tau (s) 0,04 3,5e+00 0,05 3,8e+00 0,06 8,6e01 0,07 9,2e01 0,10 1,4e01 0,05 2,2e01 0,09 4,3e02 0,13 5,1e02 0,02 4,4e03 0,03 1,2e02 0,02 6,2e04 0,03 2,4e03 buck t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 di rec /dt t di 0 /dt t 0 2000 4000 6000 8000 10000 12000 0 4 8 12 16 20 r gon ( ) di rec / dt (a/ms) di 0 /dt t di rec /dt t 0 2000 4000 6000 8000 10000 0 50 100 150 200 250 300 i c (a) di rec / dt (a/ms) copyright vincotech 9 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i c = f( t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) at at t j = 175 c t j = 175 c buck 0 100 200 300 400 500 600 0 50 100 150 200 t h ( o c) p tot (w) 0 50 100 150 200 0 50 100 150 200 t h ( o c) i c (a) 0 100 200 300 400 500 0 50 100 150 200 t h ( o c) p tot (w) 0 50 100 150 200 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 10 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collectoremitter voltage i c = f( v ce ) v ge = f( q g ) at at d = single pulse i c = 150 a t h = 80 oc v ge = 15 v t j = t jmax oc buck v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 10us 100us 1ms 10ms 100ms dc 10 0 10 3 0 2 4 6 8 10 12 14 16 0 200 400 600 800 1000 q g (nc) v ge (v) 130v 520v copyright vincotech 11 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 1 igbt figure 2 igbt typical output characteristics typical output characteristics i c = f( v ce ) i c = f( v ce ) at at t p = 350 s t p = 350 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical diode forward current as i c = f( v ge ) a function of forward voltage i f = f( v f ) at at t p = 350 s t p = 350 s v ce = 10 v boost 0 100 200 300 400 500 600 0 1 2 3 4 5 v ce (v) i c (a) 0 30 60 90 120 150 0 2 4 6 8 10 v ge (v) i c (a) t j = t jmax -25c t j = 25c 0 50 100 150 200 250 0 0,5 1 1,5 2 2,5 3 v f (v) i f (a) t j = t jmax -25c t j = 25c 0 100 200 300 400 500 600 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 12 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f( i c ) e = f( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a r goff = 4 figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f( i c ) e rec = f( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a boost e rec high t e rec low t 0 1 2 3 4 5 0 50 100 150 200 250 300 i c (a) e (mws) e rec high t e rec low t 0 1 2 3 4 5 0 4 8 12 16 20 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 10 12 0 50 100 150 200 250 300 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 10 12 0 4 8 12 16 20 r g ( w ww w ) e (mws) copyright vincotech 13 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f( i c ) t = f( r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 4 i c = 150 a r goff = 4 figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f( i c ) t rr = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v boost t doff t f t don t r 0,001 0,01 0,1 1 0 50 100 150 200 250 300 i c (a) t ( m s) t doff t f t don t r 0,001 0,01 0,1 1 0 4 8 12 16 20 r g ( w ww w ) t ( m s) t rr high t t rr low t 0,0 0,1 0,2 0,3 0,4 0,5 0 4 8 12 16 20 r gon ( ) t rr (ms) t rr high t t rr low t 0,00 0,05 0,10 0,15 0,20 0,25 0,30 0,35 0 50 100 150 200 250 300 i c (a) t rr (ms) copyright vincotech 14 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f( i c ) q rr = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f( i c ) i rrm = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v boost i rrm high t i rrm low t 0 30 60 90 120 150 180 0 4 8 12 16 20 r gon ( ) i rrm (a) q rr high t q rr low t 0 3 6 9 12 15 18 0 4 8 12 16 20 r gon ( w ww w ) q rr (mc) i rrm high t i rrm low t 0 30 60 90 120 150 180 0 50 100 150 200 250 300 i c (a) i rrm (a) q rr high t q rr low t 0 3 6 9 12 15 18 0 50 100 150 200 250 300 i c (a) q rr (mc) copyright vincotech 15 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor d i 0 /d t ,d i rec /d t = f( i c ) d i 0 /d t ,d i rec /d t = f( r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 350 v v r = 350 v v ge = 15 v i f = 150 a r gon = 4 v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f( t p ) z thjh = f( t p ) at at d = t p / t d = t p / t r thjh = 0,29 k/w r thjh = 0,47 k/w igbt thermal model values fwd thermal model values r (k/w) tau (s) r (k/w) tau (s) 0,04 3,0e+00 0,05 4,1e+00 0,05 7,9e01 0,07 9,2e01 0,08 1,4e01 0,10 1,4e01 0,09 4,3e02 0,14 3,8e02 0,02 3,8e03 0,06 9,0e03 0,01 6,0e04 0,05 2,0e03 boost t p (s) z thjh (k/w) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 t p (s) z thjh (k/w) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 di 0 /dt t di rec /dt t 0 2000 4000 6000 8000 10000 0 4 8 12 16 20 r gon ( ) di rec / dt (a/ms) di rec /dt t di o /dt t 0 2000 4000 6000 8000 10000 0 50 100 150 200 250 300 i c (a) di rec / dt (a/ms) copyright vincotech 16 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i c = f( t h ) at at t j = 175 oc t j = 175 oc v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) at at t j = 175 oc t j = 175 oc boost 0 100 200 300 400 500 600 0 50 100 150 200 t h ( o c) p tot (w) 0 50 100 150 200 250 300 0 50 100 150 200 t h ( o c) i c (a) 0 100 200 300 400 0 50 100 150 200 th ( o c) p tot (w) 0 50 100 150 200 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 17 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 25 boost inverse diode figure 26 boost inverse diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f( v f ) z thjh = f( t p ) at at t p = 250 s d = t p / t r thjh = 0,46 k/w figure 27 boost inverse diode figure 28 boost inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f( t h ) i f = f( t h ) at at t j = 175 oc t j = 175 oc boost inv. diode 0 100 200 300 400 0 1 2 3 4 v f (v) i f (a) t j = t jmax -25c tj = 25c t p (s) z thjc (k/w) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 0 100 200 300 400 0 50 100 150 200 th ( o c) p tot (w) 0 50 100 150 200 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 18 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 1 thermistor typical ntc characteristicas a function of temperature r t = f( t ) thermistor ntc-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) r ( ) copyright vincotech 19 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet t j 150 c r gon 4 r goff 4 figure 1 buck igbt figure 2 buck igbt turnoff switching waveforms & definition of t doff , t eoff turnon switching waveforms & definition of t don , t eon ( t e off = integrating time for e off ) ( t e on = integrating time for e on ) v ge (0%) = 15 v v ge (0%) = 15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 150 a i c (100%) = 150 a t doff = 0,22 s t don = 0,15 s t e off = 0,31 s t e on = 0,25 s figure 3 buck igbt figure 4 buck igbt turnoff switching waveforms & definition of t f turnon switching waveforms & definition of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 150 a i c (100%) = 150 a t f = 0,03 s t r = 0,03 s switching definitions buck general conditions == = i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 150 -0,1 0 0,1 0,2 0,3 0,4 time (s) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,9 3 3,1 3,2 3,3 3,4 time(s) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 0,1 0,14 0,18 0,22 0,26 0,3 0,34 time (s) % v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,1 3,15 3,2 3,25 3,3 time(s) % t r v ce i c copyright vincotech 20 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 5 buck igbt figure 6 buck igbt turnoff switching waveforms & definition of t eoff turnon switching waveforms & definition of t eon p off (100%) = 52,50 kw p on (100%) = 52,50 kw e off (100%) = 2,68 mj e on (100%) = 2,45 mj t e off = 0,31 s t e on = 0,25 s figure 8 buck fwd turnoff switching waveforms & definition of t rr v d (100%) = 350 v i d (100%) = 150 a i rrm (100%) = 157 a t rr = 0,10 s switching definitions buck i c 1% v ge 90% -25 0 25 50 75 100 125 -0,1 0 0,1 0,2 0,3 0,4 time (s) % p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 3 3,1 3,2 3,3 3,4 3,5 time(s) % p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,1 3,15 3,2 3,25 3,3 3,35 3,4 time(s) % i d v d fitted copyright vincotech 21 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet figure 9 buck fwd figure 10 buck fwd turnon switching waveforms & definition of t qrr turnon switching waveforms & definition of t erec ( t q rr = integrating time for q rr ) ( t erec = integrating time for e rec ) i d (100%) = 150 a p rec (100%) = 52,50 kw q rr (100%) = 9,91 c e rec (100%) = 2,07 mj t q rr = 0,19 s t e rec = 0,19 s switching definitions buck t qrr -150 -100 -50 0 50 100 150 3,1 3,2 3,3 3,4 3,5 time(s) % i d q rr -25 0 25 50 75 100 125 3,1 3,2 3,3 3,4 3,5 time(s) % p rec e rec t erec copyright vincotech 22 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet pin x y pin x y 1 52,2 6,9 23 2,7 28,2 2 52,2 0 24 0 28,2 3 36,2 6,75 25 18,3 22,45 4 33,2 7,9 26 21,3 21,3 5 33,2 4,9 27 21,3 24,3 6 9,2 5,75 28 43 22,15 7 6,2 6,9 29 46 21 8 6,2 3,9 30 46 24 9 2,7 0 31 52,2 20,1 10 0 0 32 49,5 22,8 11 2,7 2,7 33 52,2 22,8 12 0 2,7 34 49,5 25,5 13 2,7 5,4 35 52,2 25,5 14 0 5,4 36 49,5 28,2 15 2,7 12,75 37 52,2 28,2 16 0 12,75 17 2,7 15,45 18 0 15,45 19 2,7 22,8 20 0 22,8 21 2,7 25,5 22 0 25,5 pinout identification ordering code in datamatrix as in packaging barcode as m136f39/3/ 10f107nib150sg06m136f39 10p107nib150sg06m136f39/3/ ordering code and marking outline pinout ordering code & marking outline version m136f39 without thermal paste 17mm housing with thermal paste 17mm housing m136f39/3/ m136f39 id component voltage current d9,d10 t function comment t1,t4,t5,t8t2,t3,t6,t7 650v600v buck switch boost switch igbtigbt fwdfwd fwd ntc d1,d4,d5,d8d2,d3,d6,d7 650v600v 650v buck diode thermistor 75a75a 50a 50a 160a boost diode boost sw. protection diode m136f39y m136f39y pin table pin table without thermal paste 17mm housing with pressfit pins 10p107nib150sg06m136f39y copyright vincotech 23 08 sep. 2015 / revision 5
10f107nib150sg06m136f39 10p107nib150sg06m136f39y datasheet 100 disclaimerlife support policy as used herein:2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. the information, specifications, procedures, methods and recommendations herein (together information) are presented by vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. it is readers sole responsibility to test and determine the suitability of the information and the product for readers intended use.vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. general datasheet for flow 1 packages see vincotech.com website. packaging instruction standard packaging quantity (spq) >spq standard

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