? ? ? ? guilin strong micro-electronics co.,ltd. gm 8205d dual n-channel 20v, sot-26 mosfet ? n- ? f eatures c low on-resistance and maximum dc current capability ? ? super high density cell design ??O? r ds(on) < 25 m ? @vgs= 4.5 v r ds(on) < 40 m ? @vgs= 2.5 v applications power management in note book P? ? portable equipment y?O battery powered system ? ?y dc/dc converter ? / ? load switch ?d_P internal schematic diagram ?Y absolute maximum ratings ?? characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss 2 0 v gate - source voltage ? O - ? O? v gs + 8 v drain current (continuous) ? O - Bm i d 5.0 a drain current (pulsed) ? O - i dm 20 a total device dissipation ? p tot 1.25 w thermal resistance junction - ambient r ja 100 /w junct io n / storage temperature Y / ? t j , t stg -55~150
? ? ? ? guilin strong micro-electronics co.,ltd. gm 8205d e lecterical c haracteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 2 0 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v gs ( th ) 0.5 1.0 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = 20 v) i dss 1 u a gate body leakage ? O ? (v gs = + 8 v, v ds = 0 v) i gss + 10 0 n a static drain-source on-state resistance ??? ? ( i d = 5 a, v gs = 4.5 v ) ( i d = 4 a, v gs = 2.5 v ) r ds ( on ) 20 35 25 40 m diode forward voltage drop ? O ( i sd = 1.7 a, v gs =0 v ) v sd 1 . 2 v input capacitance ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c iss 800 pf common source output capacitance ? ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c oss 155 pf reverse transfer capacitance ? (v gs = 0 v, v ds = 10 v, f=1 mhz) c r ss 125 pf gate source charge ? ? ? (v ds = 10 v, i d = 3 a , v gs = 4.5 v ) q gs 1.2 nc gate drain charge ? ? ? (v ds = 10 v, i d = 3 a , v gs = 4.5 v ) q gd 1.9 nc turn-on delay time _ ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t d (on) 8 ns turn-on rise time _ rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t r 10 ns turn-off delay time P ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t d (off) 18 ns turn-on fall time _ ? rg (v d s = 10 v, i d = 1 a , r gen = 6 , v gs = 4.5 v ) t f 5 ns
? ? ? ? guilin strong micro-electronics co.,ltd. GM8205D typical characteristic curve
? ? ? ? guilin strong micro-electronics co.,ltd. GM8205D dimension b?
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