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mosfet metaloxidesemiconductorfieldeffecttransistor optimos?power-transistor,25v 25voptimos?5powermosfet BSG0813NDI datasheet rev.2.0 final industrial&multimarket
BSG0813NDI power block features dual asymmetric n-channel optimos?5 mosfet logic level (4.5v rated) optimized for high performance buck converters pb-free lead plating; rohs compliant qualified according to jedec 1) for target applications halogen-free according to iec61249-2-21 monolithic integrated schottky like diode maximum ratings, at tj=25c, unless otherwise specified 2) parameter symbol conditions unit q1 q2 continuous drain current i d t c =70 c, v gs =10 v 50 50 a t c =70 c, v gs =4.5 v 50 50 t a =25 c, v gs =4.5 v 3) 31 50 t a =25 c, v gs =4.5 v 4) 19 33 pulsed drain current i d,pulse t c =70 c 160 160 avalanche energy, single pulse e as q1: i d =10 a, q2: i d =20 a, r gs =25 30 90 mj gate source voltage v gs t j =25 c v power dissipation p tot t a =25 c 3) 6.25 6.25 w t a =25 c 4) 2.5 2.5 operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 value -55 ... 150 55/150/56 16 1) j-std20 and jesd22 type package marking BSG0813NDI pg-tison8-4 0813ndi q1 q2 v d s 25 25 v r ds(on),max v gs =10 v 3 1.2 m v gs =4.5 v 4 1.7 i d 50 50 a product summary rev.2.0 page 1 2015-03-13
BSG0813NDI parameter symbol conditions unit min. typ. max. thermal characteristics q1 r thjc - - 4.3 k/w q2 - - 2.2 q1 r thja q2q1 q2 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage q1 q2q1 q2 gate threshold voltage q1 q2 zero gate voltage drain current q1 i dss --1 a q2 - - 500 q1 - - 100 q2 - 1 - ma gate-source leakage current q1 i gss q2q1 r ds(on) - 3.2 4.0 m q2 - 1.2 1.7 q1 - 2.4 3.0 q2 - 0.9 1.2 gate resistance q1 r g - 0.7 1.2 q2 - 1 1.7 transconductance q1 g fs 46 93 - s q2 70 140 - v gs =4.5 v, i d =20 a v gs =10 v, i d =20 a | v ds |>2| i d | r ds(on)max , i d =20 a v ds =20 v, v gs =0 v, t j =125 c na - v gs =16 v, v ds =0 v - v ds =25 v, v gs =0 v, t j =25 c values 2) only one of both transistors active drain-source on-state resistance thermal resistance, junction - ambient 2) application specific board 3) 100 -- 2 1.2 thermal resistance, junction - case 1.6 25 6) v - mv/k 6 cm 2 cooling area 4) v (br)dss v gs =0 v, i d =1 ma v gs(th) v v ds = v gs , i d =250 a 2050 ---- breakdown voltage temperature coefficient d v (br)dss /d t j i d =10 ma, referenced to 25 c -1 5 rev.2.0 page 2 2015-03-13
BSG0813NDI parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance q1 c iss - 780 1100 pf q2 - 2200 2900 output capacitance q1 c oss - 390 520 q2 - 1300 1700 reverse transfer capacitance q1 c rss -3 8- q2 - 71 - turn-on delay time q1 t d(on) - 4.3 - ns q2 - 3.6 - rise time q1 t r - 4.7 - q2 - 2.8 - turn-off delay time q1 t d(off) - 4.3 - q2 - 5.7 - fall time q1 t f - 1.4 - q2 - 1.7 - gate char g e characteristics gate to source charge q1 q gs - 2.0 nc gate to drain charge q gd - 1.4 - gate charge total q g - 5.6 8.4 gate plateau voltage v plateau - 2.6 - v gate to source charge q2 q gs - 5.2 - nc gate to drain charge q gd - 3.1 - gate charge total q g -1 52 2 gate plateau voltage v plateau - 2.3 - v output charge q1 q oss -8- n c q2 - 27 - 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 3) 8 layers copper 70 m thickness. pcb in still air values v gs =0 v, v ds = 12 v, f =1 mhz v in =12 v, v drv =5 v, f sw =500 khz, i out =20 a 5) v dd =12 v, i d =20 a, v gs =0 to 4.5 v v dd =12 v, v gs =0 v rev.2.0 page 3 2015-03-13
BSG0813NDI parameter symbol conditions unit min. typ. max. reverse diodediode continuous forward current q1 i s - - 29 a q2 - - 50 diode pulse current q1 i s,pulse - - 160 q2 - - 160 diode forward voltage q1 v sd v gs =0 v, i f =20 a, t j =25 c - 0.82 1 v q2 v gs =0 v, i f =11 a, t j =25 c - 0.52 0.7 reverse recovery charge q1 q rr nc q2 5) for more information see a pp lication note n tbd 6) the device can withstand a pulse of not more than 30 v for a duration of up to 2 ns at a frequency of 600 khz with maximum buck converter input voltage v in =16 v values t c =25 c v r =12 v, i f = i s , d i f /d t =100 a/s 10 -- rev.2.0 page 4 2015-03-13
BSG0813NDI 1 power dissipation (q1) 2 power dissipation (q2) p tot =f( t a ) 4) p tot =f( t a ) 4) 3 drain current (q1) 4 drain current (q2) i d =f( t c ) i d =f( t c ) parameter: v gs 10 v parameter: v gs 10 v 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] rev.2.0 page 5 2015-03-13
BSG0813NDI 5 safe operating area (q1) 6 safe operating area (q2) i d =f( v ds ); t c =25 c; d =0 i d =f( v ds ); t c =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (q1) 8 max. transient thermal impedance (q2) z thjc =f( t p ) z thjc =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev.2.0 page 6 2015-03-13
BSG0813NDI 9 typ. output characteristics (q1) 10 typ. output characteristics (q2) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (q1) 12 typ. drain-source on resistance (q2) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 100 200 300 400 0123 i d [a] v ds [v] 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 40 80 120 160 0123 i d [a] v ds [v] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 0.5 1 1.5 2 2.5 3 0 2 04 06 08 0 r ds(on) [m ] i d [a] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 2 4 6 8 10 0 2 04 06 08 0 r ds(on) [m ] i d [a] rev.2.0 page 7 2015-03-13
BSG0813NDI 13 typ. transfer characteristics (q1) 14 typ. transfer characteristics (q2) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (q1) 16 drain-source on-state resistance (q2) r ds(on) =f( t j ); i d =20 a; v gs =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v 25 c 150 c 0 100 200 300 400 01234 i d [a] v gs [v] 25 c 150 c 0 40 80 120 160 01234 i d [a] v gs [v] typ 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] typ 0 0.5 1 1.5 2 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] rev.2.0 page 8 2015-03-13
BSG0813NDI 17 typ. gate threshold voltage (q1) 18 typ. gate threshold voltage (q2) v gs(th) =f( t j ); v gs = v ds ; i d =250 a v gs(th) =f( t j ); v gs = v ds ; i d =10 ma 19 typ. capacitances (q1) 20 typ. capacitances (q2) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 0 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] rev.2.0 page 9 2015-03-13
BSG0813NDI 21 forward characteristics of reverse diode (q1) 22 forward characteristics of reverse diode (q2) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (q1) 24 avalanche characteristics (q2) i as =f( t av ); r gs =25 i as =f( t av ); r gs =25 parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 150 c 10 -2 10 -1 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 i f [a] v sd [v] -55 c 25 c 150 c 100 c 10 -2 10 -1 10 0 10 1 10 2 10 3 00 . 40 . 81 . 2 i f [a] v sd [v] rev.2.0 page 10 2015-03-13
BSG0813NDI 25 typ. gate charge (q1) 26 typ. gate charge (q2) v gs =f( q gate ); i d =20 a pulsed v gs =f( q gate ); i d =20 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (q1) 28 typ. drain-source leakage current (q2) v br(dss) =f( t j ); i d =1 ma i dss =f( v ds ); v gs =0 v parameter: t j 20 21 22 23 24 25 26 27 28 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 5 v 12 v 20 v 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v gs [v] q gate [nc] 5 v 12 v 20 v 0 2 4 6 8 10 0 1 02 03 0 v gs [v] q gate [nc] 25 c 75 c 100 c 125 c 10 -6 10 -5 10 -4 10 -3 10 -2 0 5 10 15 20 i dss [a] v ds [v] rev.2.0 page 11 2015-03-13
BSG0813NDI package outline pg-tison8-4 r ev.2.0 page 12 2015-03-13
BSG0813NDI boardpads & apertures pg-tison8-4 all the dimensions in mm r ev.2.0 page 13 2015-03-13
15 25voptimos?5powermosfet BSG0813NDI rev.2.0,2015-03-17 revisionhistory BSG0813NDI revision:2015-03-17,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2015-03-17 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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