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? AUIRGP66524D0 auirgf66524d0 v ces = 600v i nominal = 24a tsc ?? 6s, t j(max) = 175c v ce(on) typ. = 1.60v g c e gate collector emitter automotive grade parameter max. units v ces collector-to-emitter voltage 600 v i nominal nominal collector current 24 i c @ t c = 25c continuous collector current 60 i c @ t c = 100c continuous collector current 40 i cm pulse collector current, v ge = 15v 72 a i lm clamped inductive load current, v ge = 20v ? 96 i f @ t c = 25c diode continous forward current 55 i f @ t c = 100c diode continous forward current 35 i fm diode maximum forward current ? 72 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 dv/dt maximum voltage transient 15 v/ns p d @ t c = 25c maximum power dissipation 214 w p d @ t c = 100c maximum power dissipation 107 t j operating junction and t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) -55 to +175 ? absolute maximum ratings stresses beyond those listed under ?absolute maximum ra tings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condi tion beyond those indicated in the specifications is not implied.expos ure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air condi- tions. ambient temperature (t a ) is 25c, unless otherwise specified. e g n-channel c ? features benefits low v ce(on) trench igbt technology high efficiency in a wide range of applications low switching losses suitable for a wide range of switching frequencies 6s scsoa guaranteed enables short circuit protection scheme square rbsoa and 100% clamp il tested rugged hard switching operation positive v ce(on) temperature coefficient enables easy paralleling of devices ultra fast soft recovery co-pak diode better efficiency and improved emi performance lead-free, rohs compliant, automotive qualified * environmentally friendly ? ? ? base part number package type standard pack orderable part number ? ? form quantity AUIRGP66524D0 to-247ac tube 25 AUIRGP66524D0 auirgf66524d0 to-247ad tube 25 auirgf66524d0 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 to-247ad auirgf66524d0 to-247ac AUIRGP66524D0 c c e g e g *? qualification standards can be found at http://www.irf.com/ ? coolir igbt applications ? air conditioning compressor ? auxiliary motor drive insulated gate bipol ar transistor with ultrafast soft recovery diode ??
? auirgp/f66524d0 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ?? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.21 ? v/c v ge =0v, i c =20ma (25c-175c) ? 1.60 1.90 i c = 24a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 1.95 ? v i c = 24a, v ge = 15v, t j = 150c ? 2.0 ? i c = 24a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 5.5 6.5 7.5 v v ce = v ge , i c = 250a ? v ge(th) / ? tj threshold voltage temp. coefficient ? -28 ? mv/c v ce =v ge , i c =1ma(25c-175c) gfe forward transconductance ? 21 ? s v ce = 50v, i c = 24a, pw = 20s i ces collector-to-emitter leakage current ? 1.1 50 a v ge = 0v, v ce = 600v v fm diode forward voltage drop ? 1.50 1.90 i f = 24a ? 1.40 ? i f = 24a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v v thermal resistance parameter typ. max. units r ? jc (igbt) thermal resistance junction-to-case (each igbt) ? ??? 0.7 r ? jc (diode) thermal resistance junction-to-case (each diode) ? ??? 1.1 r ? cs thermal resistance, case-to-sink (flat, greased surface) 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 c/w ? switching characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 50 80 nc i c = 24a q ge gate-to-emitter charge (turn-on) ? 16 24 v ge = 15v q gc gate-to-collector charge (turn-on) ? 26 39 v cc = 400v e on turn-on switching loss ? 915 1045 j e off turn-off switching loss ? 280 395 e total total switching loss ? 1195 1440 i c = 24a, v cc = 400v, v ge = 15v t d(on) turn-on delay time ? 30 50 ns r g = 10 ? , l = 740h, t j = 25c t r rise time ? 25 45 energy losses include tail & diode t d(off) turn-off delay time ? 75 95 reverse recovery t f fall time ? 25 45 e on turn-on switching loss ? 1280 ? j e off turn-off switching loss ? 550 ? e total total switching loss ? 1830 ? i c = 24a, v cc = 400v, v ge = 15v t d(on) turn-on delay time ? 30 ? ns r g = 10 ? , l = 740h, t j = 175c t r rise time ? 25 ? energy losses include tail & diode t d(off) turn-off delay time ? 100 ? reverse recovery t f fall time ? 95 ? c ies input capacitance ? 1460 ? pf v ge = 0v c oes output capacitance ? 120 ? v cc = 30v c res reverse transfer capacitance ? 50 ? f = 1.0mhz t j = 175c, i c = 96a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 10 ? , v ge = +20v to 0v scsoa short circuit safe operating area 6 ? ? t j = 150c, v cc = 400v, vp 600v rg = 50 ? , v ge = +15v to 0v erec reverse recovery energy of the diode ? 570 ? j t j = 175c t rr diode reverse recovery time ? 176 ? ns v cc = 400v, i f = 24a i rr peak reverse recovery current ? 19 ? a v ge = 15v, rg = 10 ? , l = 740h s notes: ? v cc = 80% (v ces ), v ge = 20v, l = 740h, r g = 10 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j approximately 90c.
? auirgp/f66524d0 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature fig. 5 - reverse bias soa t j = 175c; v ge = 20v 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 70 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tsink = 100c gate drive as specified power dissipation = 114w 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) fig. 1 - typical load current vs. frequency 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 175c single pulse dc fig. 4 - forward soa t c = 25c, t j @ 175c; v ge =15v fig. 2 - maximum dc collector current vs. case temperature i square wave: v cc diode as specified
? auirgp/f66524d0 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 12 24 36 48 60 72 84 96 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v 0 2 4 6 8 10 v ce (v) 0 12 24 36 48 60 72 84 96 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v 0 2 4 6 8 10 v ce (v) 0 12 24 36 48 60 72 84 96 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v fig. 6 - - typ. igbt output characteristics t j = -40c; tp = 20s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f (v) 0 12 24 36 48 60 72 84 96 i f ( a ) t j = -40c t j = 25c t j =175c fig. 7 - typ. igbt output characteristics tj = 25c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a fig. 9 - typ. diode forward characteristics tp = 20s
? auirgp/f66524d0 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 fig. 12 - typical v ce vs. v ge t j = 175c fig. 17 - typ. switching time vs. r g t j = 175c; l = 740h; v ce = 400v, i ce = 24a; v ge = 15v 51 01 52 0 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 4 5 6 7 8 9 10 11 12 13 14 v ge, gate-to-emitter voltage (v) 0 12 24 36 48 60 72 84 96 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c 0 1020304050 i ce (a) 0 1000 2000 3000 4000 e n e r g y ( j ) e off e on 0 10 20 30 40 50 i ce (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 20406080100 r g ( ? ) 0 500 1000 1500 2000 2500 e n e r g y ( j ) e off e on fig. 16 - typ. energy loss vs. r g t j = 175c; l = 740h; v ce = 400v, i ce = 24a; v ge = 15v fig. 14 - typ. energy loss vs. i c t j = 175c; l = 740h; v ce = 400v, r g = 10 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 15 - typ. switching time vs. ic tj = 175c; l = 740h; v ce = 400v, r g = 10 ? ; v ge = 15v
? auirgp/f66524d0 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 fig. 20 - typ. diode i rr vs. dif/dt v cc = 400v; v ge = 15v; i f = 24a; t j = 175c fig. 21 - typ. diode q rr vs. dif/dt v cc = 400v; v ge = 15v; t j = 175c 10 20 30 40 50 i f (a) 10 12 14 16 18 20 22 24 i r r ( a ) r g = 10 ? r g = 47 ? r g = 22 ? r g = 100 ? 0 20 40 60 80 100 r g ( ?? 12 14 16 18 20 i r r ( a ) 0 200 400 600 800 1000 1200 di f /dt (a/s) 1000 1500 2000 2500 3000 3500 4000 q r r ( c ) ??? ??? ???? ??? 24a 48a 12a fig. 19 - typ. diode i rr vs. r g t j = 175c 10 20 30 40 50 60 i f (a) 200 400 600 800 1000 e r r ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? fig. 22 - typ. diode e rr vs. i f t j = 175c 9 10111213141516 v ge (v) 0 3 6 9 12 15 18 21 t i m e ( s ) 0 30 60 90 120 150 180 210 c u r r e n t ( a ) t sc i sc fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 150c 200 300 400 500 600 700 di f /dt (a/s) 10 12 14 16 18 20 22 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 175c
? auirgp/f66524d0 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 fig 27. maximum transient thermal impedance, junction-to-case (diode) 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 26. maximum transient thermal impedance, junction-to-case (igbt) ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.03622 0.000036 0.36378 0.000213 0.45197 0.003117 0.24882 0.019088 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 25 - typical gate charge vs. v ge i ce = 24a; l= 485h fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz ri (c/w) ? i (sec) ? 0.01805 0.000012 0.17293 0.000101 0.29774 0.002832 0.21353 0.018393 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
? auirgp/f66524d0 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 ? 0 1k vcc dut l gate charge circuit l rg 80 v dut vcc + - rbsoa circuit g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.6 - bvces filter circuit l rg vcc dut / driver diode clamp / dut -5v switching loss rg vcc dut r = vcc icm fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit dc 4x dut vcc r sh fig.c.t.3 - s.c. soa circuit
? auirgp/f66524d0 9 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -4 -2 0 2 4 6 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 10% i ce eoff loss tf -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -4-20246 i ce (a) v ce (v) time (s) test current 90% i ce 5% v ce 10% i ce t r eon loss -50 0 50 100 150 200 250 -100 0 100 200 300 400 500 -4048 ice (a) vce (v) time (s) vce ice fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -30 -20 -10 0 10 20 30 40 -0.50 -0.30 -0.10 0.10 0.30 0.50 i f (a) time (s) peak i rr t rr q rr
? auirgp/f66524d0 10 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 to-247ac package outline dimensions are shown in millimeters (inches) to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. ywwa xx ? xx date code y= year ww= work week augp66524d0 lot code part number ir logo
? auirgp/f66524d0 11 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 to-247ad part marking information to-247ad package outline dimensions are shown in millimeters (inches) to-247ad package is not recommended for surface mount application. ywwa xx ? xx date code y= year ww= work week augf66524d0 lot code part number ir logo note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ?
? auirgp/f66524d0 12 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 ? qualification standards can be f ound at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? qualification level automotive (per aec-q101) ? this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is gr anted by extension of the higher automotive level. moisture sensitivity level ? to-247ac n/a ? to-247ad human body model class h1c(+/- 2000) ?? aec-q101-001 charged device model class c5 (+/- 1000) ?? aec-q101-005 rohs compliant yes esd ?
? auirgp/f66524d0 13 www.irf.com ? 2014 international rectifier submit datasheet feedback october 10, 2014 important notice unless specifically designated for the automotive market, inter national rectifier corporation and its subsidiaries (ir) re- serve the right to make corrections, modifications, enhance ments, improvements, and other changes to its products and services at any time and to discontinue any product or serv ices without notice. part num bers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir ?s terms and conditions of sale supplied at the time of or- der acknowledgment. ir warrants performance of its hardware products to the specific ations applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control te chniques are used to the extent ir deems necessary to sup- port this warranty. except where mandat ed by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assi stance or customer product design. cu stomers are responsible for their prod- ucts and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documenta- tion. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any imp lied warranties for the associated ir pr oduct or service and is an unfair and de- ceptive business practice. ir is not res ponsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal in jury or death may occur. should buyer purchase or use ir products for any such unintended or unaut horized application, buyer shall indemn ify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distri butors harmless against all claims, costs, damages, and expens- es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufac- ture of the product. only products certified as military grade by the defense logi stics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applica- tions. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environm ents unless the specific ir products are designated by ir as compliant with is o/ts 16949 requirements and bear a part number including the des- ignation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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