microwave power gan hemt microwave semiconductor TGI1314-50L technical data rev. december 9, 2011 features ? high power ? broad band internally matched hemt pout=47.0dbm at pin=42.0dbm hermetically sealed package ? high gain ? low intermodulation distortion gl=8.0db at 13.75ghz to 14.5ghz im3(min.)= ? 25dbc at po=40.0dbm single carrier level rf performance spec ifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power pout dbm 46.0 47.0 gain flatness g db 0.8 drain current ids1 a 5.0 6.0 power added efficiency add % 29 gate current ig rf vds = 24v idsset ? 2.0a f = 13.75 to 14.5ghz @ pin=42dbm ma -40 +100 linear gain gl @pin=20dbm db 7.0 8.0 3rd order intermodulation distortion im3 dbc -25 drain current ids2 two-tone test po= 40.0dbm (single carrier level) a 5.0 6.0 channel temperature rise tch (vds x ids + pin ? pout) x rth(c-c) c 130 150 recommended gate resistance(rg) : rg= 13.3 (typ.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 5 v i ds = 5.0a s ? 4.5 ? pinch-off voltage v gsoff v ds = 5 v i ds = 23ma v -1 -4 -6 saturated drain current i dss v ds = 5v v gs = 0v a ? 15 ? gate-source breakdown voltage v gso i gs = -10ma v -10 ? ? thermal resistance r th(c-c) channel to case c/w ? ? 1.6 ? the information contained herein is presented only as a guide for the applicatio ns of our products. no responsibility is assume d by toshiba for any infringements of patents or other rights of the third parties which may results fr om its use, no license is gra nted by implication or otherwise under any patent or patent rights of toshiba or others. the informatio n contained herein is subject to change without prior notice. it is therefore advisable to contact toshib a before proceeding with design of equipment incorporating thi s product.
TGI1314-50L absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 50 gate-source voltage v gs v -10 drain current i ds a 15 total power dissipation (tc= 25 c) p t w 140 channel temperature t ch c 250 storage t stg c -65 to +175 package outline ( 7- aa07a ) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2
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