72214hk tc-00003140/51612tkim pe no.8759-1/5 http://onsemi.com semiconductor components industries, llc, 2014 july, 2014 EMH2314 power mosfet C 12v, 37m ? , C 5a, dual p-channel ordering information see detailed ordering and shipping information on page 2 of this data sheet. stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? on-resistance r ds (on)1=28m ? (typ.) ? halogen free compliance ? 1.8v drive ? protection diode in specifcations absolute maximum ratings at ta=25c parameter symbol conditions value unit drain-to-source voltage v dss --12 v gate-to-source voltage v gss 8 v drain current (dc) i d --5 a drain current (pulse) i dp pw 10 s, duty cycle 1% --20 a power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.2 w junction temperature tj 150 c storage temperature tstg --55 to +150 c thermal resistance ratings parameter symbol value unit junction to ambient when mounted on ceramic substrate (900mm 2 0.8mm) 1unit r ja 125 c/w package dimensions unit : mm (typ) 7045-002 ordering number : en8759a product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel taping type : tl marking electrical connection 87 65 12 34 mp lot no. 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 EMH2314-tl-h tl
EMH2314 no.8759-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --12 v zero-gate voltage drain current i dss v ds = --12 v, v gs =0v --10 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a gate threshold voltage v gs (th) v ds = --6 v, i d = -- 1ma --0.4 --1.3 v forward transconductance g fs v ds = --6 v, i d = --2.5 a 11 s static drain-to-source on-state resistance r ds (on)1 i d = --2.5 a, v gs = --4.5 v 28 37 m ? r ds (on)2 i d = --1.5 a, v gs = --2.5 v 53 75 m ? r ds (on)3 i d = --0.5 a, v gs = --1.8 v 133 200 m ? input capacitance ciss v ds = --6v, f=1mhz 1300 pf output capacitance coss 158 pf reverse transfer capacitance crss 143 pf turn-on delay time t d (on) see specifed test circuit. 16 ns rise time t r 77 ns turn-off delay time t d (off) 79 ns fall time t f 58 ns total gate charge qg v ds = --6 v, v gs = --4.5 v, i d = -- 5a 12 nc gate-to-source charge qgs 3 nc gate-to-drain miller charge qgd 2 nc forward diode voltage v sd i s = -- 5a, v gs =0v --0.9 --1.2 v switching time test circuit ordering information device package shipping memo EMH2314-tl-h emh8 3,000pcs./reel pb-free and halogen free d.c.1% pw=10s p. g 50? g s d i d = - -2.5a r l =2.4? v dd = - -6v v out v in 0v - -4.5v v in EMH2314 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
EMH2314 no.8759-3/5 i s - - v sd drain current, i d - - a forward diode v oltage, v sd - - v sw time - - i d ciss, coss, crss - - v ds switching t ime, s w t ime - - ns ciss, coss, crss - - pf drain current, i d - - a drain-to-source vo ltage, v ds - - v r ds (on) - - v gs r ds (on) - - t a static drain-to-source on-state resistance, r ds (on) - - m? static drain-to-source on-state resistance, r ds (on) - - m? gate-to-source vo ltage, v gs - - v ambient temperature, ta - - c source current, i s - - a i d - - v ds i d - - v gs drain current, i d - - a drain-to-source vo ltage, v ds - - v drain current, i d - - a gate-to-source vo ltage, v gs - - v g fs - - i d forward tr ansconductance, g fs - - s hd16897 hd16898 0.1 1.0 7 5 3 2 7 5 3 2 7 5 3 2 100 10 - -0.1 - -1.0 - -10 - -0.01 23 57 23 57 23 57 t a= - -25 c v ds = - -6v - -0.01 2 3 - -0.1 7 5 2 3 7 5 2 3 7 5 v gs =0v - -0.1 23 57 23 57 - -1.0 - -10 v dd = - -6v v gs = - -4.5v t d (on) t d (of f) t f it16899 0- -5 -- 7 7 5 1000 100 3 2 7 5 10000 3 2 -- 9- -12 - -11 -- 2- -4 -- 1- -3 -- 6- -8 - -10 ciss coss crss it16900 10 2 3 100 7 5 2 3 1000 7 5 ta =75 c 25 c - -25 c f=1mhz 0- -2 -- 4- -6 -- 8 -- 1- -3 -- 5- -7 20 60 100 40 140 80 120 160 200 180 0 20 60 100 40 140 80 120 160 200 180 0 it16895 it16896 i d = - -0.5a - -2.5a ta =25c - -1.5a 75 c 25 c - -1.0 - -10 - -60 - -40 - -20 02 04 06 08 0 100 120 140 160 v gs = - -1.8v , i d = - -0.5a v gs = - -4.5v , i d = - -2.5a v gs = - -2.5 v, i d = - -1.5a 0 - -5.0 - -4.5 - -4.0 - -3.0 - -1.5 - -2.0 - -3.5 - -2.5 - -1.0 - -0.5 0- -0.2 - -0.4 - -0.6 - -0.8 - -1.0 - -0.1 - -0.3 - -0.5 - -0.7 - -0.9 it16893 0- -1.5 - -1.0 - -0.5 - -2.5 - -2.0 - -3.0 0 75 c it16894 - -2.5v -- 1.6v - -1.8v - -8.0v - -4.5v ta =- -25 c v ds = - -6v 25 c v gs = - -1.3v - -3.0v t r -- 1 -- 2 -- 3 -- 4 -- 5 -- 7 -- 6 0- -0.2 - -0.4 - -0.8 - -0.6 - -1.0 - -1.2 - -1.4
EMH2314 no.8759-4/5 ambient t emperature, ta - - c p d - - t a power dissipation, p d - - w v gs - - qg to tal gate cha rg e, qg - - nc gate-to-source vo ltage, v gs - - v s o a drain-to-source vo ltage, v ds - - v drain current, i d - - a hd16903 0 0 25 50 0.4 75 100 125 150 175 0.8 1.2 0.2 0.6 1.0 1.4 it16901 0 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.0 - -4.5 v ds = - -6v i d = - -5a 01 2 11 46 23 5 17 81 0 9 when mounted on ceramic substrate (900mm 2 0.8mm) 1unit to tal dissipation - -1.0 2 3 5 7 2 3 5 7 2 3 5 7 - -10 2 3 5 7 - -100 - -0.1 - -0.01 23 57 23 57 23 57 - -0.01 - -0.1 - -1.0 - -10 23 57 - -100 hd16902 10ms 100ms i d = - -5a dc operation( ta =25 c ) i dp = - -20a(pw10s) 1ms operation in this area is limited by r ds (on). 100 s ta =25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 0.1 1.0 10 100 1000 r ja - - pulse time pulse t ime, pt - - s thermal resistance, r ja - - oc/w 0.000001 0.00001 2 0.0001 35 72 0.001 35 72 35 7 23 57 0.01 2 0.1 35 72 1.0 35 72 10 35 7 hd duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 single pulse
EMH2314 ps no.8759-5/5 outline drawing land pattern example EMH2314-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9 note on usage : since the EMH2314 is a mosfet product, please avoid using this device in the vicinity of klkofkdhgremhfwv on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to m ake changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaim s any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/o r specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal i njury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scill c and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
|
