unisonic technologies co., ltd up672 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r502-504.b n-channel mosfet arra y for switching ? description the utc up672 includes two mosfet devices in a sot-363 package. it achieves high-density mounting and saves mounting costs. ? features * automatic mounting supported ? symbol (6) d1 (2) g1 s1 (1) n-channel (3) d2 (5) g2 s2 (4) n-channel sot-363 1 2 3 4 5 6 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 up672l-al6-r up672g-al6-r sot-363 s1 g1 d2 s2 g2 d1 tape reel note: pin assignment: g: gate d: drain s: source ? marking
up672 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-504.b ? absolute maximum ratings (t a =25c) parameter symbol ratings unit drain-source voltage v dss 50 v gate-source voltage v gss 7.0 v drain current continuous i d 100 ma pulsed (note 2) i dm 200 ma total power dissipation p d 200 mw channel temperature t ch 150 c storage temperature range t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pw 10ms, duty cycle 50% ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v drain-source leakage current i dss v ds =50v, v gs =0v 10 a gate-source leakage current forward i gss v ds =0v ,v gs =7.0v 5.0 a reverse v ds =0v ,v gs =-7.0v -5.0 a on characteristics gate threshold voltage v gs ( off ) v ds =3.0v, i d =1.0a 0.7 1.0 1.5 v drain-source on-state resistance r ds ( on ) 1 v gs =2.5v, i d =10ma 3 40 ? r ds ( on ) 2 v gs =4.0v, i d =10ma 2.3 20 ? forward transconductance |y fs | v ds =3.v, i d =10ma 20 ms dynamic parameters input capacitance c iss v ds =3.0v, v gs =0v, f=1.0mhz 27 pf output capacitance c oss 17 pf reverse transfer capacitance c rss 11 pf switching parameters turn-on delay time t d ( on ) v dd =3v,i d =20ma, v gs(on) =3v, r g =10 ? , r l =120 ? 30 ns turn-on rise time t r 18 ns turn-off delay time t d ( off ) 42 ns turn-off fall time t f 12.5 ns
up672 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-504.b ? switching time measurement circuit and conditions
up672 power mosfet unisonic technologies co., ltd 4 of 3 www.unisonic.com.tw qw-r502-504.b ? typical characteristics drain current, i d (a) drain current, i d (a) 0 source to drain diode current vs. source to drain voltage source to drain voltage, v sd (v) source to drain diode current, i sd (ma) 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 140 120 drain-source on-state resistance characteristics drain current, i d (ma) drain to source voltage, v ds (mv) 0 4 10 14 0 50 100 150 200 2 6 8 12 250 v gs =4v, i d =10ma v gs =2.5v, i d =10ma utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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