|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 1 10 0 v p - c hannel enhancement mode mosfet v oltage - 10 0 v c urrent - 1.5 a sot - 2 2 3 f eatures ? r ds(on) , v gs @ - 10v,i d @ - 1.5 a< 65 0 m ? r ds(on) , v gs @ - 4.5 v,i d @ - 1 .0 a< 70 0m ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case : sot - 223 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.043 ounces, 0.123 grams ? marking : w2 p 10 a m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds - 10 0 v gate - source voltage v gs + 2 0 v continuous drain current t a =25 o c i d - 1.5 a t a = 70 o c - 1 .2 pulsed drain current (note 1 ) i dm - 6 a power dissipation t a =25 o c p d 3.1 w t a = 70 o c 2 single pulse avalanche energy (note 5 ) e as 0.2 mj operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 6 ) r ja 40 .3 o c /w ? limited only by maximum junction temperature 1
p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d = - 250ua - 10 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250ua - 1.0 - 2. 0 - 2.5 v drain - source on - state resistance r ds(on) v gs = - 10v,i d = - 1.5 a - 50 0 650 m gs = - 4.5 v,i d = - 1.0 a - 5 6 0 700 zero gate voltage drain current i dss v ds = - 80 v,v gs =0v - - - 1 .0 ua gate - source leakage current i gss v gs = + 2 0 v,v ds =0v - - + 100 na dynamic (note 7 ) total gate charge q g v ds = - 50 v, i d = - 1.5 a, v gs = - 10v (note 1,2 ) - 8 - nc gate - source charge q gs - 1.8 - gate - drain charge q gd - 1.4 - input capacitance ciss v ds = - 15 v, v gs =0v, f=1.0mhz - 448 - pf output capacitance coss - 28 - reverse transfer capacitance crss - 21 - turn - on delay time td (on) v d s = - 50 v, rl=33 gs = - 10v , r g = 6.2 (note 1,2 ) - 3.7 - ns turn - on rise time t r - 25 - turn - off delay time td (off) - 21 - turn - off fall time t f - 22 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1.5 a diode forward voltage v sd i s = - 1 a,v gs =0v - - 0. 82 - 1. 2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. the maximum current rating is package limited. 4. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial tj =25c. 5. the test condition is l=0.1mh, i as = - 2 a , v dd = - 25v, v gs = - 10v 6. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch 2 with 2oz. square pad of copper . 7. guaranteed by design, not subject to production testing. p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 source - drain diode forward voltage p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature fig. 10 capacitance vs. drain - source voltage fig. 11 maximum safe operating area p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 5 t ypical characteristic curves fig. 12 normalized transient thermal impedance vs. pulse width p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 6 packaging information . sot - 223 dimension u nit: mm p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 7 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion pj w2 p 10 a _ r2 _00001 sot - 223 2,500pcs / 13 p p j w 2 p 10 a july 7 ,201 5 - rev.0 0 page 8 disclaimer |
Price & Availability of PJW2P10A |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |