cmpdm302ph surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor cmpdm302ph is a high current p-channel enhancement-mode silicon mosfet, manufactured by the p-channel dmos process, and is designed for high speed pulsed amplifier and driver applications. this mosfet offers high current, low r ds(on) , low threshold voltage, and low leakage current. marking code: 302c maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current (steady state) i d 2.4 a maximum pulsed drain current, tp=10s i dm 9.6 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =12v, v ds =0 100 na i dss v ds =20v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 0.7 1.4 v r ds(on) v gs =4.5v, i d =1.2a 0.050 0.091 r ds(on) v gs =2.5v, i d =1.2a 0.066 0.129 g fs v ds =5.0v, i d =2.4a 4.6 s c rss v ds =10v, v gs =0, f=1.0mhz 69 pf c iss v ds =10v, v gs =0, f=1.0mhz 800 pf c oss v ds =10v, v gs =0, f=1.0mhz 62 pf q g(tot) v dd =10v, v gs =5.0v, i d =2.4a 7.0 9.6 nc q gs v dd =10v, v gs =5.0v, i d =2.4a 1.4 4.2 nc q gd v dd =10v, v gs =5.0v, i d =2.4a 1.5 2.6 nc t on v dd =10v, i d =2.4a, r g =10 12 ns t off v dd =10v, i d =2.4a, r g =10 17 ns features: ? low r ds(on) (0.129 max @ v gs =2.5v) ? high current (i d =2.4a) ? logic level compatibility applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-23f case r1 (11-december 2012) www.centralsemi.com
cmpdm302ph surface mount p-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking code: 302c sot-23f case - mechanical outline 21 3 pin configuration www.centralsemi.com r1 (11-december 2012)
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