1. product profile 1.1 general description npn silicon rf transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter sot143b package. the BFU520X is part of the bfu5 family of tr ansistors, suitable for small signal to medium power applications up to 2 ghz. 1.2 features and benefits ? low noise, high breakdown rf transistor ? aec-q101 qualified ? minimum noise figure (nf min ) = 0.7 db at 900 mhz ? maximum stable gain 20 db at 900 mhz ? 11 ghz f t silicon technology 1.3 applications ? applications requiring high supply voltages and high breakdown voltages ? broadband amplifiers up to 2 ghz ? low noise amplifiers for ism applications ? ism band oscillators 1.4 quick reference data BFU520X npn wideband silicon rf transistor rev. 2 ? 5 march 2014 product data sheet 6 2 7 % table 1. quick reference data t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - 5 30 ma p tot total power dissipation t sp ? 87 ?c [1] -- 450mw h fe dc current gain i c =5ma; v ce =8v 60 95 200 c c collector capacitance v cb =8v; f=1mhz - 0.52 - pf f t transition frequency i c =10ma; v ce = 8 v; f = 900 mhz - 10.5 - ghz
BFU520X all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 2 ? 5 march 2014 2 of 22 nxp semiconductors BFU520X npn wideband silicon rf transistor [1] t sp is the temperature at the solder point of the collector lead. [2] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. 2. pinning information 3. ordering information [1] the customer evaluation ki t contains the following: a) unpopulated rf amplifier printed-circuit board (pcb) b) unpopulated rf amplifier printed-circ uit board (pcb) with emitter degeneration c) four sma connectors for fitting unpopu lated printed-circuit board (pcb) d) BFU520X, bfu530x and bfu550x samples e) usb stick with data sheets, application notes, models, s-parameter and noise files 4. marking g p(max) maximum power gain i c =5ma; v ce = 8 v; f = 900 mhz [2] -20- db nf min minimum noise figure i c =1ma; v ce = 8 v; f = 900 mhz; ? s = ? opt -0.7- db p l(1db) output power at 1 db gain compression i c =10ma; v ce =8v; z s =z l =50 ? ; f=900mhz -6.5- dbm table 1. quick reference data ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit table 2. discrete pinning pin description simplified outline graphic symbol 1 collector 2emitter 3base 4emitter d d d table 3. ordering information type number package name description version BFU520X - plastic surface-mounted package; 4 leads sot143b om7963 - customer evaluation kit for BFU520X, bfu530x and bfu550x [1] - table 4. marking type number marking description BFU520X *te * = t : made in malaysia * = w : made in china
BFU520X all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 2 ? 5 march 2014 3 of 22 nxp semiconductors BFU520X npn wideband silicon rf transistor 5. design support 6. limiting values 7. recommended operating conditions [1] t sp is the temperature at the solder point of the collector lead. table 5. available design support download from the BFU520X product information page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads yes based on mextram device model. spice model yes based on gummel-poon device model. s-parameters yes noise parameters yes customer evaluation kit yes see section 3 and section 10 . solder pattern yes application notes yes see section 10.1 and section 10.2 . table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 30 v v ce collector-emitter voltage open base - 16 v shorted base - 30 v v eb emitter-base voltage open collector - 3 v i c collector current -50ma t stg storage temperature ? 65 +150 ?c v esd electrostatic discharge voltage human body model (hbm) according to jedec standard 22-a114e - ? 150 v charged device model (cdm) according to jedec standard 22-c101b - ? 2kv table 7. characteristics symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - - 30 ma p i input power z s = 50 ? --10dbm t j junction temperature ? 40 - +150 ?c p tot total power dissipation t sp ? 87 ?c [1] --450mw
BFU520X all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 2 ? 5 march 2014 4 of 22 nxp semiconductors BFU520X npn wideband silicon rf transistor 8. thermal characteristics [1] t sp is the temperature at the solder point of the collector lead. t sp has the following relation to the ambient temperature t amb : t sp =t amb +p? r th(sp-a) with p being the power dissipation and r th(sp-a) being the thermal resistance between the solder point and ambient. r th(sp-a) is determined by the heat transfer properties in the application. the heat transfer properties are set by the appl ication board materials, the board layout and the environment e.g. housing. 9. characteristics table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point [1] 140 k/w fig 1. power derating curve d d d 7 v s ? & |