? semiconductor components industries, llc, 2000 january, 2000 rev. 0 1 publication order number: MMVL109t1/d MMVL109t1 preferred device silicon epicap diodes designed for general frequency control and tuning applications; providing solidstate reliability in replacement of mechnaical tuning methods. ? high q with guaranteed minimum values at vhf frequencies ? controlled and uniform tuning ratio ? surface mount package ? device marking: 4a maximum ratings symbol rating value unit v r continuous reverse voltage 30 vdc i f peak forward current 200 madc thermal characteristics symbol characteristic max unit p d total device dissipation fr5 board,* t a = 25 c derate above 25 c 200 1.57 mw mw/ c r ja thermal resistance junction to ambient 635 c/w t j , t stg junction and storage temperature range 55 to +150 c *fr5 minimum pad http://onsemi.com 2632 pf voltage variable capacitance diodes device package shipping ordering information MMVL109t1 sod323 3000 / tape & reel plastic sod323 case 477 2 1 preferred devices are recommended choices for future use and best overall value. 1 cathode 2 anode
MMVL109t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted.) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m adc) v (br)r 30 e e vdc reverse voltage leakage current (v r = 25 vdc) i r e e 0.1 m adc diode capacitance temperature coefficient (v r = 3.0 vdc, f = 1.0 mhz) tc c e 300 e ppm/ c c t , diode capacitance v r = 3.0 vdc, f = 1.0 mhz pf q, figure of merit v r = 3.0 vdc f = 50 mhz c r , capacitance ratio c 3 /c 25 f = 1.0 mhz (note 1) device min nom max min min max MMVL109t1 26 29 32 200 5.0 6.5 1. c r is the ratio of c t measured at 3 vdc divided by c t measured at 25 vdc. figure 1. diode capacitance 40 32 24 16 8 0 1 3 10 30 100 v r , reverse voltage (volts) c t , capacitance - pf figure 2. figure of merit f, frequency (mhz) figure 3. leakage current t a , ambient temperature figure 4. diode capacitance t a , ambient temperature q, figure of merit 10 1000 100 10 100 1000 , reverse current (na) 100 -60 0.01 0.001 0 +40 +100 c t , diode capacitance (normalized) 1.04 -75 1.02 1.00 0.98 0.96 -25 +25 +75 +125 v r = 3.0 vdc f = 1.0 mhz c t c c + c j 36 28 20 12 4 f = 1.0 mhz t a = 25 c v r = 3 vdc t a = 25 c v r = 20 vdc +120 +140 +80 +60 +20 -40 -20 i r 0.1 1.0 10 20 2.0 0.2 0.02 0.002 0.006 0.06 0.6 6.0 60 -50 0 +50 +100 1.03 1.01 0.99 0.97 notes on testing and specifications 1. c r is the ratio of c t measured at 3.0 vdc divided by c t measured at 25 vdc.
MMVL109t1 http://onsemi.com 3 package dimensions sod323 plastic package case 47702 issue a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. dim min max min max inches millimeters a 1.60 1.80 0.063 0.071 b 1.15 1.35 0.045 0.053 c 0.80 1.00 0.031 0.039 d 0.25 0.40 0.010 0.016 e 0.15 ref 0.006 ref h 0.00 0.10 0.000 0.004 j 0.089 0.177 0.0035 0.0070 k 2.30 2.70 0.091 0.106 note 3 a k 1 2 d b e h c j style 1: pin 1. cathode 2. anode 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches sod323 soldering footprint
MMVL109t1 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. MMVL109t1/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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