vishay TLMW3146 document number 83175 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 high intensity smd led description this device have been designed to meet the increas- ing demand for white smd led. the package of the TLMW3146 is the plcc-2 (equiv- alent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled with a mixture of epoxy and tag phosphor. the tag phosphor converts the blue emission par- tially to yellow, which mixes with the remaining blue to give white. features ? high efficient ingan technology chromaticity coordinate categorized according to cie1931 per packing unit luminous intensity ratio in one packing unit i vmax /i vmin 1.75 typical color temperature 5500 k esd class 1 eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape reel lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax backlighting for audio and video equipment backlighting in office equipment indoor and outdoor message boards flat backlight for lcds, switches and symbols illumination purposes, alternative to incandescent lamps general use parts table absolute maximum ratings t amb = 25 c, unless otherwise specified TLMW3146 part color, luminous intensity angle of half intensity ( ? ) technology TLMW3146 white, i v = 65 mcd (typ.) 60 ingan / tag on sic parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 70 c i f 20 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 70 c p v 85 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c
www.vishay.com 2 document number 83175 rev. 1.4, 31-aug-04 vishay TLMW3146 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified white TLMW3146 chromaticity coordi nate classification luminous intensit y classification tolerance 0.005 storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 350 k/w parameter test condition part symbol min ty p. max unit luminous intensity i f = 10 ma TLMW3146 i v 40 65 100 mcd chromaticity coordinate x acc. to cie 1931 i f = 10 ma TLMW3146 x 0.315 0.365 chromaticity coordinate y acc. to cie 1931 i f = 10 ma TLMW3146 y 0.290 0.440 angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 10 ma v f 3.5 4.0 v reverse voltage i r = 10 av r 5v temperature coefficient of v f i f = 20 ma tc vf - 4 mv/k temperature coefficient of i v i f = 20 ma tc iv - 0.5 % / k parameter test condition symbol value unit group x y min max min max 4a 0.3150 0.3275 y = 1.4 x - 0.111 y = 1.4 x - 0.071 4b 0.3275 0.3400 y = 1.4 x - 0.111 y = 1.4 x - 0.151 4c 0.3150 0.3275 y = 1.4 x - 0.151 y = 1.4 x - 0.111 4d 0.3275 0.3400 y = 1.4 x - 0.151 y = 1.4 x - 0.111 5a 0.3400 0.3525 y = 1.4 x - 0.111 y = 1.4 x - 0.071 5b 0.3525 0.3650 y = 1.4 x - 0.111 y = 1.4 x - 0.071 5c 0.3400 0.3525 y = 1.4 x - 0.151 y = 1.4 x - 0.111 5d 0.3525 0.3650 y = 1.4 x - 0.151 y = 1.4 x - 0.111 group luminous intensity (mcd) min max uc1 40 60 uc2 50 70 ud1 58 85 ud2 70 100
vishay TLMW3146 document number 83175 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature for alingap figure 3. forward current vs. ambient temperature for alingap p - power dissipation ( mw ) v 0 10 20 30 40 50 60 70 80 90 t amb - ambient temperature ( c) 16191 0 1020 304050607080 90100 0 5 10 15 20 25 16192 i - forward current ( ma ) f t amb - ambient temperature ( c) 0 1020 304050607080 90100 0 5 10 15 20 25 30 0 102030405060708090100 t amb - ambient t emperature ( c) 16193 i - forward current ( ma ) f mttf, confidence level 60% failure criteria i v /i v0 = 50% ii i i 5000h ii 10000h figure 4. relative luminous intensity vs. forward current figure 5. forward current vs. forward voltage figure 6. relative intensity vs. wavelength 0.01 0.1 1 10 1 10 100 i f - forward current ( ma ) 16194 i - relative luminous intensity vrel 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v f - forward voltag e(v) 16195 f i - forward current ( ma ) 0 10 20 30 40 50 60 70 80 90 100 400 450 500 550 600 650 700 750 800 - wavelength ( nm ) 16196 i - relative luminous intensity v rel
www.vishay.com 4 document number 83175 rev. 1.4, 31-aug-04 vishay TLMW3146 vishay semiconductors figure 7. rel. luminous intensity vs. ambient temperature figure 8. chromaticity coordinate shift vs. forward current figure 9. forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 16197 i - relative luminous intensity vrel t amb - ambient temperature ( c) 0 1020 304050607080 90100 0.315 0.320 0.325 0.330 0.335 0.340 0.345 16198 f - chromaticity coordinate shift (x,y) x y i f - forward current ( ma ) white 060 50 40 30 20 10 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 16199 i - forward voltag e(v) f t amb - ambient temperature ( c) 0 1020 304050607080 90100 figure 10. rel. luminous intensity vs. angular displacement figure 11. coordinates of colorgroups 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.40 0.41 0.42 0.43 0.44 0.31 0.32 0.33 0.34 0.35 0.36 0.37 16930 coordinates of colorgroups 4a 4b 5a 5b 4c 4d 5c 5d coordinates of colorgroups
vishay TLMW3146 document number 83175 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
www.vishay.com 6 document number 83175 rev. 1.4, 31-aug-04 vishay TLMW3146 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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