v rrm = 800 v - 1200 v i f = 6 a features ? high surge capability do-4 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit repetitive peak reverse voltage v rrm v rms reverse voltage v rms v dc blocking voltage v dc v s6k thru s6qr 2. reverse polarity (r): stud is anode. conditions s6k (r) s6m (r) s6q (r) 1000 700 560 1000 800 ? types from 800 v to 1200 v v rrm silicon standard recover y diode maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 800 1200 840 1200 dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w v r = 100 v, t j = 25 c i f = 6 a, t j = 25 c reverse current i r v f electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm a v t c = 25 c, t p = 8.3 ms t c 160 c conditions s6m (r) 2.50 2.50 v r = 100 v, t j = 175 c 12 12 1.1 -55 to 150 12 1000 800 10 s6q (r) 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 s6k (r) 2.50 666 167 167 167 1200 1.1 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
s6k thru s6qr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. s6k thru s6qr do- 4 (do-203aa) j g f a e d p n b c m inches millimeters min max min max a 10-32 unf b 0.424 0.437 10.77 11.10 c ----- 0.505 ----- 12.82 d ------ 0.800 ----- 20.30 e 0.453 0.492 11.50 12.50 f 0.114 0.140 2.90 3.50 g ----- 0.405 ----- 10.29 j ----- 0.216 ----- 5.50 m ----- 0.302 ----- 7.68 n 0.031 0.045 0.80 1.15 p 0.070 0.79 1.80 2.00 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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