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1. product profile 1.1 general description the clf1g0060-30 and CLF1G0060S-30 are 30 w general purpose broadband gan hemts usable from dc to 6.0 ghz. [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f=1mhz. clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt rev. 4 ? 20 june 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq =70ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 30 15.6 60.7 1000 30 13.9 50.3 1500 30 13.7 50.8 2000 30 12.6 49 2500 30 14.2 55.6 1-tone pulsed [1] 500 30 16.6 61 1000 30 15.8 50 1500 30 15.5 52.5 2000 30 14.5 50 2500 30 15.9 59 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 150 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 10 ? 38 1000 10 ? 50 1500 10 ? 45 2000 10 ? 50 2500 10 ? 43
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 2 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 1.2 features and benefits ? frequency of operation is from dc to 6.0 ghz ? 30 w general purpose broadband rf power gan hemt ? excellent ruggedness (vswr = 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol clf1g0060-30 (sot1227a) 1drain 2gate 3source [1] CLF1G0060S-30 (sot1227b) 1drain 2gate 3source [1] ddd ddd table 4. ordering information type number package name description version clf1g0060-30 - flanged ceramic package; 2 mounting holes; 2 leads sot1227a CLF1G0060S-30 - earless flanged ceramic package; 2 leads sot1227b
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 3 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 34 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -11ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - 250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 3.1 k/w table 7. dc characteristics t case = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds =7.2ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds =7.2ma ? 2.4 ? 2 ? 1.6 v i dsx drain cut-off current v ds =10v; v gs =3 v - 5.1 - a g fs forward transconductance v ds =10 v; v gs =0v - 1.1 - s table 8. rf characteristics test signal: pulsed rf; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq =70ma; t case = 25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit f frequency 3 - 3.5 ghz ? d drain efficiency p l = 30 w - 50 - % g p power gain p l = 30 w - 13 - db rl in input return loss p l =30 w - ? 7- db p droop(pulse) pulse droop power p l = 30 w - 0.04 - db t r rise time p l = 30 w - 5 - ns t f fall time p l = 30 w - 5 - ns
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 4 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 7. application information 7.1 demo circuit printed-circuit board (pcb ) material: taconic rf35, ? r = 3.5, thickness 30 mils, 1 oz copper on each side. see table 9 for list of components. fig 1. the broadband amplifier (500 mhz to 2500 mhz) demo circuit outline table 9. list of components see figure 1 . component description value remarks a1 gan bias module v2 - nxp c1, c10 multilayer ceramic ch ip capacitor 8.2 pf atc 600f c2, c7 multilayer ceramic chip capacitor 0.8 pf atc 600f c3 electrolytic capacitor 100 nf, 50 v smd 0805 c4 electrolytic capacitor 10 nf, 50 v smd 0805 c5 electrolytic capacitor 22 pf, 100 v smd 0805 c6 electrolytic capacitor 1 nf, 100 v smd 1206 c8 multilayer ceramic chip capacitor 1.2 pf atc 600f c9 multilayer ceramic chip capacitor 0.5 pf atc 600f ddd &/)* ,13875(95) &/)* ,13875(95) *$1%,$6 02'8/( 4 5 4 5 5 & & & & & & & & / & & & & & & & & / /
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 5 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt c11 multilayer ceramic chip capacitor 100 pf atc 100b c12 multilayer ceramic ch ip capacitor 1 nf atc 700b c14 electrolytic capacitor 1 ? f, 100v smd 1206 c15 electrolytic capacitor 10 ? f, 100 v smd 2220 c16 electrolytic capacitor 10 nf, 200 v smd 1210 c17 electrolytic capacitor 470 ? f, 63 v pce3667ct-nd e1, e2 drain voltage connection - j1 rf in connector - j2 rf out connector - l1 inductor 330 nh 1008cs-100xjb l2 ferrite bead - 2743019447 l3 inductor - 1 turn, 18 awg, inner diameter = 4.06 mm q1 transistor - nxp clf1g0060-30 q2 transistor - nxp bc857b q3 transistor - nxp psmn8r2-80ys r1 resistor 10 k ? vishay dale r2 resistor 10 ? vishay dale r3 resistor 0.005 ? rl7520wt-r005-f z1, z2, z3, z4, z5, z6, z7, z8, z9, z10, z11, z12, z13 microstrip lines - table 9. list of components ?continued see figure 1 . component description value remarks
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 6 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt see table 9 for a list of components. fig 2. the broadband amplifier (500 mhz to 2500 mhz) demo circuit schematic *1' ,1 ' $ 4 %&% 4 &/)* & = 5 n = = - 1) & s) s) [plo [plo [plo *$1%,$6 02'8/( * 6 9* )% & % ( *1' *1' & s) & s) = [plo = [plo = = 5 5 [plo = [plo [plo / q+ / q+ & ?) ( ( 9 *1' 4 36015<6 = [plo = & s) & ) & q) & q) & s) & q) & s) & q) & q) [plo = [plo = [plo = [plo - 1) ddd & s)
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 7 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 7.2 application test results [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f=1mhz. table 10. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq =70ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 500 30 15.6 60.7 1000 30 13.9 50.3 1500 30 13.7 50.8 2000 30 12.6 49 2500 30 14.2 55.6 1-tone pulsed [1] 500 30 16.6 61 1000 30 15.8 50 1500 30 15.5 52.5 2000 30 14.5 50 2500 30 15.9 59 table 11. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 150 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 500 10 ? 38 1000 10 ? 50 1500 10 ? 45 2000 10 ? 50 2500 10 ? 43
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 8 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 7.3 graphical data the following figures are measured in a broadband amplifier demo board from 500 mhz to 2500 mhz. 7.3.1 1-tone cw rf performance v ds = 50 v; i dq = 70 ma; p l =30w. v ds = 50 v; i dq = 70 ma. (1) g p at f = 500 mhz (2) g p at f = 1500 mhz (3) g p at f = 2500 mhz (4) ? d at f = 500 mhz (5) ? d at f = 1500 mhz (6) ? d at f = 2500 mhz fig 3. power gain and drain efficiency as function of frequency; typical values fig 4. power gain and drain efficiency as function of output power; typical values ddd i0+] * s s s g% ' * s ' ddd 3 / g%p * s s s g% '
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 9 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 7.3.2 1-tone pulsed rf performance v ds = 50 v; i dq = 70 ma; p l =30w; t p = 100 ? s; ? =10%. v ds = 50 v; i dq = 70 ma; t p = 100 ? s; ? =10%. (1) g p at f = 500 mhz (2) g p at f = 1500 mhz (3) g p at f = 2500 mhz (4) ? d at f = 500 mhz (5) ? d at f = 1500 mhz (6) ? d at f = 2500 mhz fig 5. power gain and drain efficiency as function of frequency; typical values fig 6. power gain and drain efficiency gain as function of output power; typical values ddd i0+] * s s s g% ' * s ' ddd 3 / g%p * s s s g% '
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 10 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 7.3.3 2-tone cw performance 7.4 bias module the bias module information for the gan hemt amplifier is described in application note ?an11130?. 8. test information 8.1 ruggedness in class-ab operation the clf1g0060-30 and CLF1G0060S-30 are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; p l = 30 w (pulsed rf), f = mhz. 8.2 load pull impedance information the measured load pull impedances are shown below. impedance reference plane defined at device leads. measurements performed with nxp test fixtures. test temperature set at 25 ? c with a pulsed cw signal; t p =100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 50 ma. v ds = 50 v; i dq = 150 ma; ? f=1mhz. (1) f = 500 mhz (2) f = 1500 mhz (3) f = 2500 mhz v ds = 50 v; i dq = 150 ma; p l(pep) =10 w. (1) ? f = 10 khz (2) ? f = 30 khz (3) ? f = 100 khz (4) ? f = 300 khz (5) ? f=1 mhz (6) ? f=3 mhz fig 7. third order intermodulation distortion as a function of peak envelope power; typical values fig 8. third-order intermodulation distortion as function of frequency and tone spacing; typical values ddd 3 /3(3 : ,0' g%f ddd i0+] ,0' g%f
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 11 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt z s is the measured source pull impedance presented to the device. z l is the measured load pull impedance presented to the device. table 12. typical impedance typical values unless otherwise specified. f z s z l (maximum p l(m) ) z l (maximum ? d ) mhz ? ? ? 2140 1.4 ? 4j 14 + 5.4j 12.5 + 9.7j 2500 2.8 ? 6j 10.5 + 2.5j 7.6 + 5.6j 2700 2.8 ? 7.5j 10.7 + 1.3j 7.6 + 4.3j 3000 3.0 ? 10j 9.1 + 3.5j 7.7 + 4.2j 3300 3.0 ? 11.5j 9.4 + 1.2j 7.6 + 2.5j 3500 3.0 ? 13j 9.5 7.2 + 1.35j 3700 3.5 ? 14.4j 9.4 ? 1.1j 7.3 ? 0.05j 4000 3.7 ? 20.3j 9.3 ? 2.4j 7.7 ? 1.2j fig 9. definition of transistor impedance ddd gudlq vrxufh = 6 = / jdwh
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 12 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 8.3 packaged s-parameter data table 13. s-parameter small signal; v ds = 50 v; i dq = 50 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 100 0.9302 ? 76.396 44.515 135.22 0.016195 46.871 0.7376 ? 43.407 200 0.87436 ? 115.47 29.415 111.96 0.021253 25.279 0.55438 ? 65.523 300 0.8537 ? 134.97 21.02 98.876 0.022516 13.903 0.47582 ? 77.762 400 0.8464 ? 146.22 16.096 89.855 0.02261 6.6529 0.44954 ? 86.181 500 0.8446 ? 153.57 12.919 82.761 0.022198 1.4192 0.44849 ? 92.826 600 0.84548 ? 158.81 10.71 76.739 0.021498 ? 2.6237 0.46041 ? 98.482 700 0.84785 ? 162.82 9.0883 71.392 0.020604 ? 5.8352 0.47921 ? 103.5 800 0.85112 ? 166.05 7.8465 66.516 0.019567 ? 8.375 0.50159 ? 108.06 900 0.85494 ? 168.77 6.8655 61.995 0.018424 ? 10.302 0.5256 ? 112.27 1000 0.85908 ? 171.15 6.0713 57.758 0.017205 ? 11.612 0.5501 ? 116.19 1100 0.86338 ? 173.27 5.4157 53.759 0.015936 ? 12.256 0.57433 ? 119.86 1200 0.86774 ? 175.22 4.866 49.966 0.014644 ? 12.138 0.59785 ? 123.33 1300 0.87206 ? 177.04 4.3993 46.356 0.01336 ? 11.113 0.62038 ? 126.6 1400 0.8763 ? 178.75 3.9988 42.911 0.012117 ? 8.9845 0.64176 ? 129.7 1500 0.88039 179.61 3.6521 39.616 0.010958 ? 5.505 0.66191 ? 132.65 1600 0.88432 178.03 3.3496 36.459 0.0099386 ? 0.40868 0.68081 ? 135.46 1700 0.88806 176.49 3.0841 33. 428 0.00 91267 6.4893 0.69846 ? 138.14 1800 0.8916 175 2.8497 30. 514 0.0085991 15.099 0.7149 ? 140.7 1900 0.89493 173.53 2.6416 27.709 0.008424 24.853 0.73019 ? 143.15 2000 0.89806 172.09 2.4562 25. 005 0.0086339 34.74 0.74438 ? 145.5 2100 0.90098 170.67 2.2902 22. 395 0.0092114 43.73 0.75755 ? 147.76 2200 0.9037 169.26 2.1411 19.872 0.0101 51.208 0.76975 ? 149.93 2300 0.90622 167.87 2.0067 17.429 0.011233 57.053 0.78106 ? 152.02 2400 0.90856 166.48 1.8852 15.062 0.012549 61.439 0.79154 ? 154.04 2500 0.91072 165.11 1.775 12.766 0.014001 64.635 0.80125 ? 155.99 2600 0.91272 163.74 1.6748 10.534 0.015556 66.902 0.81025 ? 157.88 2700 0.91455 162.37 1.5835 8.3639 0.017191 68.455 0.8186 ? 159.71 2800 0.91623 161 1.5001 6. 2502 0.01889 69.459 0.82634 ? 161.49 2900 0.91777 159.63 1.4237 4.1894 0.020642 70.039 0.83353 ? 163.22 3000 0.91917 158.27 1.3535 2.1779 0.022441 70.288 0.8402 ? 164.91 3100 0.92044 156.89 1.289 0. 21252 0.024281 70.278 0.84641 ? 166.55 3200 0.9216 155.52 1.2296 ? 1.71 0.02616 70.06 0.85218 ? 168.16 3300 0.92264 154.14 1.1748 ? 3.5925 0.028076 69.675 0.85755 ? 169.73 3400 0.92357 152.75 1.1241 ? 5.4376 0.030027 69.154 0.86255 ? 171.27 3500 0.92441 151.35 1.0771 ? 7.2479 0.032015 68.521 0.8672 ? 172.78 3600 0.92515 149.94 1.0336 ? 9.0257 0.034039 67.795 0.87155 ? 174.26 3700 0.92579 148.53 0.99314 ? 10.773 0.036099 66.989 0.87559 ? 175.72
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 13 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 3800 0.92635 147.1 0.95551 ? 12.493 0.038198 66.115 0.87937 ? 177.15 3900 0.92683 145.65 0.92046 ? 14.186 0.040336 65.183 0.8829 ? 178.57 4000 0.92723 144.2 0.88777 ? 15.855 0.042516 64.2 0.88619 ? 179.97 4100 0.92756 142.73 0.85724 ? 17.501 0.044737 63.171 0.88927 178.65 4200 0.92781 141.24 0.82871 ? 19.126 0.047003 62.101 0.89215 177.28 4300 0.928 139.73 0.802 ? 20.732 0.049315 60.994 0.89484 175.93 4400 0.92812 138.2 0.77698 ? 22.32 0.051676 59.853 0.89735 174.58 4500 0.92818 136.66 0.75351 ? 23.891 0.054087 58.68 0.8997 173.25 4600 0.92818 135.09 0.73149 ? 25.447 0.05655 57.477 0.9019 171.92 4700 0.92812 133.5 0.71079 ? 26.99 0.059068 56.245 0.90396 170.6 4800 0.928 131.89 0.69133 ? 28.519 0.061644 54.986 0.90588 169.28 4900 0.92783 130.25 0.67301 ? 30.038 0.064279 53.699 0.90767 167.97 5000 0.92761 128.59 0.65576 ? 31.546 0.066975 52.387 0.90935 166.66 5100 0.92734 126.9 0.63949 ? 33.046 0.069736 51.047 0.91092 165.35 5200 0.92701 125.17 0.62415 ? 34.537 0.072563 49.682 0.91238 164.04 5300 0.92664 123.42 0.60968 ? 36.022 0.075459 48.291 0.91375 162.73 5400 0.92622 121.64 0.596 ? 37.501 0.078426 46.874 0.91502 161.42 5500 0.92576 119.83 0.58307 ? 38.975 0.081467 45.43 0.9162 160.1 5600 0.92525 117.98 0.57085 ? 40.446 0.084583 43.959 0.9173 158.78 5700 0.9247 116.1 0.55929 ? 41.914 0.087778 42.461 0.91832 157.45 5800 0.92411 114.18 0.54834 ? 43.38 0.091053 40.935 0.91927 156.12 5900 0.92348 112.22 0.53797 ? 44.846 0.094411 39.381 0.92014 154.77 6000 0.92282 110.23 0.52814 ? 46.311 0.097853 37.797 0.92095 153.42 table 13. s-parameter ?continued small signal; v ds = 50 v; i dq = 50 ma; z s = z l = 50 ? f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree)
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 14 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 9. package outline fig 10. package outline sot1227a 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627$ )odqjhgfhudplfsdfndjhprxqwlqjkrohvohdgv 627$ vrwdbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +s 48 8 lqfkhv pd[ qrp plq f ' ) z t 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv z vfdoh pp e ' $ ) ' t 8 & % 8 $ + s z $ % ( ( f 4 z & '5$)7
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 15 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt fig 11. package outline sot1227b 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627% (duohvv)odqjhgfhudplfsdfndjhohdgv 627% vrwebsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv e' (( +4 8 z lqfkhv pd[ qrp plq f ' ) 8 1rwh 0loolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv vfdoh pp e ' ) 8 ' + ( ( 8 f 4 z ' $ ' '5$)7
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 16 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 10. handling information 10.1 esd sensitivity [1] classification 1b is granted to any part that passes after exposure to an esd pulse of 500 v, but fails after exposure to an esd pulse of 1000 v. 11. abbreviations 12. revision history table 14. esd sensitivity esd model class human body model (hbm); according jedec standard jesd22-a114f 1b [1] table 15. abbreviations acronym description awg american wire gauge cw continuous wave emc electromagnetic compatibility esd electrostatic discharge gan gallium nitride hemt high electron mobility transistor smd surface-mounted device vswr voltage standing-wave ratio wimax worldwide interoperability for microwave access table 16. revision history document id release date data sheet status change notice supersedes clf1g0060-30_1g0060s-30 v.4 20130620 objective data sheet - clf1g0060-30_1g0060s-30 v.3 modifications: ? figure 7 on page 10 : value i dq corrected to 150. clf1g0060-30_1g0060s-30 v.3 20130327 objective data sheet - clf1g0060-30_1g0060s-30 v.2 clf1g0060-30_1g0060s-30 v.2 20130129 objective data sheet - clf1g0060-30_1g0060s-30 v.1 clf1g0060-30_1g0060s-30 v.1 201 21008 objective data sheet - -
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 17 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
clf1g0060-30_1g0060s-30 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights re served. objective data sheet rev. 4 ? 20 june 2013 18 of 19 nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors clf1g0060-30; CLF1G0060S-30 broadband rf power gan hemt ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 june 2013 document identifier: clf1g0060-30_1g0060s-30 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 2 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 application test results . . . . . . . . . . . . . . . . . . . 7 7.3 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.3.1 1-tone cw rf performance. . . . . . . . . . . . . . . 8 7.3.2 1-tone pulsed rf performance . . . . . . . . . . . . 9 7.3.3 2-tone cw performance . . . . . . . . . . . . . . . . 10 7.4 bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 ruggedness in class-ab operation . . . . . . . . 10 8.2 load pull impedance information . . . . . . . . . . 10 8.3 packaged s-parameter data. . . . . . . . . . . . . . 12 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 handling information. . . . . . . . . . . . . . . . . . . . 16 10.1 esd sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 16 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14 contact information. . . . . . . . . . . . . . . . . . . . . 18 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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