ssf7ns60f 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 7 i d @ tc = 100c continuous drain current, v gs @ 10v 5 i dm pulsed drain current 28 a power dissipation 32 w p d @tc = 25c linear derating factor 0.26 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=15.2mh 68 mj i ar avalanche current @ l=15.2mh 3 a t j t stg operating junction and storage temperature range -55 to + 150 c v dss 600v r ds (on) 0.54(typ.) i d 7a to220f marking and pin assignment schematic diagram feathers: ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf7ns60f series mosfet is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low r ds(on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf7ns60f 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 3.9 /w r ja junction-to-ambient (t 10s) 80 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, i d = 250a 0.54 0.65 v gs =10v,i d = 4.6a r ds(on) static drain-to-source on-resistance 1.57 t j = 125 2 4 v ds = v gs , i d = 350a v gs(th) gate threshold voltage 2.82 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 15.1 q gs gate-to-source charge 3.8 q gd gate-to-drain("miller") charge 7.0 nc i d = 7.3a, v ds =300v, v gs = 10v t d(on) turn-on delay time 11.0 t r rise time 22.2 t d(off) turn-off delay time 23.8 t f fall time 17.8 ns v gs =10v, v ds =380v, r l =52, r gen =12 i d =7.3a c iss input capacitance 475 c oss output capacitance 399 c rss reverse transfer capacitance 4 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 7 a i sm pulsed source current (body diode) 28 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.95 1.3 v i s =7.3a, v gs =0v t rr reverse recovery time 123 ns q rr reverse recovery charge 638 nc t j = 25c, i f =1a, di/dt = 100a/s
ssf7ns60f 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
ssf7ns60f 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
ssf7ns60f 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
ssf7ns60f 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 9.960 10.160 10.360 0.392 0.400 0.408 a1 0.276 0.000 0.000 a2 3.080 3.180 3.280 0.121 0.125 0.129 a3 9.260 9.460 9.660 0.365 0.372 0.380 b1 15.670 15.870 16.070 0.617 0.625 0.633 b2 4.500 4.700 4.900 0.177 0.185 0.193 b3 6.480 6.680 6.880 0.255 0.263 0.271 c 3.200 3.300 3.400 0.126 0.130 0.134 c1 15.600 15.800 16.000 0.614 0.622 0.630 c2 9.550 9.750 9.950 0.376 0.384 0.392 d d1 - - 1.470 - - 0.058 d2 0.700 0.800 0.900 0.028 0.031 0.035 d 3 0.250 0.350 0.450 0.010 0.014 0.018 e 2.340 2.540 2.740 0.092 0.100 0.108 e1 e2 e3 0.450 0.500 0.600 0.018 0.020 0.024 e4 2.560 2.760 2.960 0.101 0.109 0.117 ? symbol dimension in millimeters dimension in inches 7.000 2.54 (typ) 0.700 1.0*45 0 30 0 1.00 (typ) 0.028 1.0*45 0 30 0 to220f package outline dimension
ssf7ns60f 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: ssf7ns60f package (available) to220f operating temperature range c : -55 to 150 oc devices per unit package type units/tube tubes/inner box units/inner box inner boxes/carton box units/ carton box to220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
