dm n 40 26s k3 document number ds 37277 rev . 1 - 2 1 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product 40v n - channel enhancement mode mosfet product summary v (br)dss r ds( on ) i d t c = + 2 5 c 4 0 v 24 m @v gs = 10v 28 a 32 m @v gs = 4.5v 24 a description this mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? backlighting ? dc - dc converters ? power m anagement f unctions features ? 100% unclamped inductive switch (uis) t est in p roduction ? low o n - resistance ? fast s witching s peed ? totally lead - free & fully rohs compliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: to252 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: matte tin finish a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.33 grams ( a pproximate) ordering information (note 4 ) product case packaging dm n 40 26 s k3 - 13 to252 2,500 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antim ony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information top view top view pin - out equivalent circuit = manufacturers marking n4026s = product type marking code yyww = date code marking yy = year (ex: 15 = 20 15 ) ww = week (01 to 53) to252 yyww n4026s . d s g g s d d e3
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 2 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 40 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t c = +25c t c = + 100 c i d 28 18 a maximum body diode continuous current i s 2.5 a pulsed drain curren t ( 10 s p ulse, d uty c ycle = 1% ) i dm 70 a avalanche current (note 7 ) l = 0. 1mh i a s 18 a avalanche energy (note 7 ) l = 0. 1mh e a s 17 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) t a = +25c p d 1. 6 w t a = + 70 c 1.0 thermal resistance, junction to ambient (note 5 ) s teady state r ja 75 c/w t<10s 32.7 total power dissipation (note 6 ) t a = +25c p d 3.4 w t a = + 70 c 2.1 thermal resistance, junction to ambient (note 6 ) s teady state r ja 37 c/w t<10s 18.1 thermal resistance, junction to case (note 6 ) r j c 4.5 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 40 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ? ? ds = 40 v, v gs = 0v gate - source leakage i gss ? ? ? gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? gs = 10 v, i d = 6 a ? gs = 4 .5v, i d = 5 a diode forward voltage v sd ? gs = 0v, i s = 1 .0 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 2 0 v, v gs = 0v , f = 1.0mh z output capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g ? ? ? ds = 2 0 v, i d = 8 a total gate charge ( v gs = 10 v ) q g ? ? ? ? gs ? ? gd ? ? d( on ) ? ? d d = 25 v, r l = 2.5 v g s = 10 v, r g = 3 r ? ? d( off ) ? ? f ? ? ? ? rr ? ? ? ? f = 8 a, di/dt = 1 0 0a/s rr ? ? ? ? f = 8 a, di/dt = 1 0 0a/s notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e a s rating s are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 3 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs =2.5v v gs =3.0v v gs =3.5v v gs =4.0v v gs =4.5v v gs =10.0v 0.6 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on), drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with temperature v gs =4.5v, i d =5.0a v gs =10.0v, i d =8.0a 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0 5 10 15 20 r ds(on), drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =1.8v v gs =2.5v 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 5 10 15 20 r ds(on), drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs = 4.5v - 55 25 85 150 125 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) fig ure 2. typical transfer characteristic v ds =5.0v - 55 25 85 125 150 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 3 4 5 6 7 8 r ds(on), drain - source on - resistance ( ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =3.3a i d =8.2a
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 4 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product 0 0.01 0.02 0.03 0.04 0.05 - 50 - 25 0 25 50 75 100 125 150 r ds(on), drain - source on - resistance ( ? ) t j , junction temperature ( ) fig ure 7 . on - resistance variation with temperature v gs =4.5v, i d =5.0a v gs =10v, i d =8.0a 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 i s, source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =125 v gs =0v, t a =150 v gs =0v, t a = - 55 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 v gs, gate - source voltage (v) q g , total gate charge ( n c) figure 12. gate charge v ds =20v, i d =8.0a 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 8. gate threshold variation vs. junction temperature i d =1ma i d =250 a 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10. typical drain - source leakage current vs. voltage 150 125 85 25
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 5 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r (t), transient thermal resistance t 1, pulse duration time ( sec ) figure 14. transient thermal resistance r jc (t)=r(t) * r jc r jc = 4.19 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.05 d=0.1 d=0.5 d=0.7 d=0.3 d=0.9 d=0.02 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area t j(max) =150 c =25 gs =10v r ds(on) limited p w =10 s p w =100ms p w =1ms p w =1s p w =10ms p w =100 s p w =1 s
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 6 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout p lease see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 7 1 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm n 40 26s k3 document number ds 37277 rev . 1 - 2 7 of 7 www.diodes.com january 2015 ? diodes incorporated dm n 4 0 26s k3 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes. com
|
