bss123 document number: ds30366 rev. 18 - 2 1 of 5 www.diodes.com august 2013 ? diodes incorporated bss123 advance information n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 100v 6.0? @ v gs = 10v 0.17 description these n-channel enhancement mode fi eld effect transistors are produced using diodes proprietary, high density, uses advanced trench technology.these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.these products are particularly suited for low voltage, low current applications such as: applications ? small servo motor control ? power mosfet gate drivers ? switching applications features and benefits ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? high drain-source voltage rating ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number qualification case packaging BSS123-7-F commercial sot23 3,000 / tape & reel bss123q-13 automotive sot23 10,000 / tape & reel bss123q-7 automotive sot23 3,000 / tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code t u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit top view top view sot23 d gs source gate drain k23 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) shanghai a/t site chengdu a/t site y m y k23 ym k23 ym e3
bss123 document number: ds30366 rev. 18 - 2 2 of 5 www.diodes.com august 2013 ? diodes incorporated bss123 advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 100 v gate-source voltage continuous v gss 20 v continuous drain current (note 5) v gs = 10v continuous i d 170 ma pulsed i dm 680 thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol max unit power dissipation (note 5) p d 300 mw thermal resistance, junction to ambient @t a = +25c (note 5) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 100 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 0.1 a v ds = 100v, v gs = 0v ? ? 10 na ? v ds = 20v, v gs = 0v gate-source leakage , forward i gssf ? ? 50 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) 0.8 1.4 2.0 v v ds = v gs , i d = 1ma static drain-source on-resistance r ds (on) ? ? 6.0 ? v gs = 10v, i d = 0.17a ? ? 10 v gs = 4.5v, i d = 0.17a forward transfer admittance g fs 80 370 ? ms v ds =10v, i d = 0.17a, f = 1.0khz diode forward voltage v sd - 0.84 1.3 v v gs = 0v, i s = 0.34a, dynamic characteristics input capacitance c iss ? 29 60 pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 10 15 reverse transfer capacitance c rss ? 2 6 switching characteristics turn-on delay time t d(on) ? ? 8 ns v gs = 10v, v dd = 30v, i d = 0.28a, r gen = 50 ? turn-on rise time t r ? ? 8 ns turn-off delay time t d(off) ? ? 13 ns turn-off fall time t f ? ? 16 ns notes: 5. part mounted on fr-4 board with recommended pad lay out, which can be found on our webs ite at http://www.diodes.com. 6. short duration pulse test used to minimize self-heating effect.
bss123 document number: ds30366 rev. 18 - 2 3 of 5 www.diodes.com august 2013 ? diodes incorporated bss123 advance information 0 0.2 0.7 0 134 5 i, d r ain-s o u r c e c u r r en t (a) d v , drain-source voltage (v) fig. 1 on-region characteristics ds 2 0.6 0.5 0.1 0.3 0.4 0.8 1.2 1.6 0.1 0.2 r , n o r malized drain-source on-resistance ds(on) i , drain-source current (a) fig. 2 on-resistance variation with gate voltage and drain-source current d 2.0 2.4 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 0 75 100 125 150 v n o r malized t h r es h o ld v o l t a g e gs(th), t , junction temperature (oc) fig. 3 gate threshold variation with temperature j 1 1.1 1.2 -25 25 50 v = i = 250a ds d v gs 0.4 0.8 1.2 -50 0 75 100 125 150 r n o r malized o n- r esis t an c e ds(on), t , junction temperature (oc) fig. 4 on-resistance variation with temperature j 1.6 1.8 2.2 -25 25 50 0.6 1 1.4 2 v = 10v i = 170m gs d 0 50 05 15 20 25 c , c a p a c i t an c e (p f ) v , drain-source voltage (v) fig. 5 typical capacitance ds 10 40 30 10 20 c iss c oss c rss
bss123 document number: ds30366 rev. 18 - 2 4 of 5 www.diodes.com august 2013 ? diodes incorporated bss123 advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 ?? 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
bss123 document number: ds30366 rev. 18 - 2 5 of 5 www.diodes.com august 2013 ? diodes incorporated bss123 advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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