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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. august 2014 docid026776 rev 1 1/18 STF6N65M2, stp6n65m2, stu6n65m2 n-channel 650 v, 1.2 ? typ., 4 a mdmesh? m2 power mosfets in to-220fp, to-220 and ipak packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. to-220 to-220fp ipak 1 2 3 1 2 3 tab 3 2 1 tab am15572v1 , tab order codes v ds r ds(on) max i d STF6N65M2 650 v 1.35 ? 4 a stp6n65m2 stu6n65m2 table 1. device summary order codes marking package packaging STF6N65M2 6n65m2 to-220fp tube stp6n65m2 to-220 stu6n65m2 ipak www.st.com
contents STF6N65M2, stp6n65m2, stu6n65m2 2/18 docid026776 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220fp, STF6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp6n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 ipak, stu6n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 docid026776 rev 1 3/18 STF6N65M2, stp6n65m2, stu6n65m2 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp to-220, ipak v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 4 (1) 1. limited by maximum junction temperature. 4a i d drain current (continuous) at t c = 100 c 2.5 (1) 2.5 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 16 (1) 16 a p tot total dissipation at t c = 25 c 20 60 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 4 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220fp to-220 ipak r thj-case thermal resistance junction-case max 6.25 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 100 mj electrical characteristics STF6N65M2, stp6n65m2, stu6n65m2 4/18 docid026776 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a 1.2 1.35 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz -226-pf c oss output capacitance - 12.8 - pf c rss reverse transfer capacitance -0.65-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 114 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - ? q g total gate charge v dd = 520 v, i d = 4 a, v gs = 10 v (see figure 8 ) -9.8-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2 a, r g = 4.7 , v gs = 10 v (see figure 15 and figure 20 ) -19-ns t r rise time - 7 - ns t d(off) turn-off delay time - 6.5 - ns t f fall time - 20 - ns docid026776 rev 1 5/18 STF6N65M2, stp6n65m2, stu6n65m2 electrical characteristics 18 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 16 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 260 ns q rr reverse recovery charge - 1.2 c i rrm reverse recovery current - 9.2 a t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 400 ns q rr reverse recovery charge - 1.84 c i rrm reverse recovery current - 9.1 a electrical characteristics STF6N65M2, stp6n65m2, stu6n65m2 6/18 docid026776 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v ? v 7 m ? & 7 f ? & 6 l q j o h s x o v h p v * , 3 * 6 $ figure 4. safe operating area for to-220 and ipak figure 5. thermal impedance for to-220 and ipak figure 6. output characteristics figure 7. transfer characteristics , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v ? v 7 m ? & 7 f ? & 6 l q j o h s x o v h p v * , 3 * 6 $ , ' 9 ' 6 9 $ 9 9 * 6 9 9 9 * , 3 * 6 $ , ' 9 * 6 9 $ 9 ' 6 9 * , 3 * 6 $ docid026776 rev 1 7/18 STF6N65M2, stp6n65m2, stu6n65m2 electrical characteristics 18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on-resistance vs temperature figure 13. normalized v (br)dss vs temperature 9 * 6 4 j q & |