201108053-3 adva nced power electronics corp. 1/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i d c i dm d at t c =25c w/c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP95T06GS-HF-3 is in the to-263 package, which is widely used g d s bv 60v fast switching performance r 8.5mw simple drive requirement low on-resistance rohs-compliant , halogen-free i 75 a drain-source voltage 60 v 20 v at t =2 5 c 75 a at t = 10 0 c 66 a 2 6 0 a p total power dissipation 138 w linear derating factor 1.11 rthj-c maximum thermal resistance, junction-case rthj- a maximum thermal resistance, junction-ambient 62 c /w 0. 9 c /w for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. o rdering information ap95t0 6 gs-hf-3tr : in rohs-compliant halogen-free to-263, shipped on tape and reel (800 pcs/reel) ap95t0 6 gp-hf-3tb : in rohs-compliant halogen-free to-220, shipped in tubes (50pcs/tube) e as single pulse avalanche energy 4 450 mj rthj- a maximum thermal resistance, junction-ambient (pcb mount) 5 40 c /w the ap 95t 0 6 gp-hf-3 is in the to-220 through-hole package which is used where a low pcb footprint or an attached heatsink is required. g d s to-263 (s) d (tab) g d s to-220 (p) d (tab) i ar avalanche current 4 30 a
adva nced power electronics corp. 2/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. notes: 1.pulse width limited by maximum junction temperature. 2.pulse test 3.package limitation current is 75a. 4.starting t j =25c , v dd =30v , l=1mh , r g =25 w , ias=30a. 5.surface-mounted on 1 in 2 copper pad of fr4 board source-drain diode symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.05 - v/c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 8.5 mw v gs =4.5v, i d =20a - - 12 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =45a - 72 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =45a - 72 115 nc q gs gate-source charge v ds =48v - 16 - nc q gd gate-drain ("miller") charge v gs =4.5v - 53 - nc t d(on) turn-on delay time 2 v ds =30v - 20 - ns t r rise time i d =45a - 76 - ns t d(off) turn-off delay time r g =3.3w -67- ns t f fall time v gs =10v - 109 - ns c iss input capacitance v gs =0v - 5700 9200 pf c oss output capacitance v ds =25v - 900 - pf c rss reverse transfer capacitance f=1.0mhz - 560 - pf r g gate resistance f=1.0mhz - 1.1 1.7 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =20a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 60 - nc
adva nced power electronics corp. 3/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature typical electrical characteristics 0 50 100 150 200 250 03691 2 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5v v g =3.0v 0 40 80 120 03691 2 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0 v 5.0v 4.5v v g =3.0v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 7 8 9 10 11 24681 0 v gs gate-to-source voltage (v) r ds(on) (mw ) i d =20a t c =25 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
adva nced power electronics corp. 4/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform typical electrical characteristics (cont.) 0 2 4 6 8 10 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =38v v ds =48v i d =45a q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0 26 52 78 104 130 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
adva nced power electronics corp. 5/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap95t06 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 95t06gp ywwsss f l5 e d1 1 2 3
adva nced power electronics corp. 6/6 ap95t06gp/s-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap95t06 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant halogen-free to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. symbols e b b1 e d l2 l3 c1 a a1 l4 c ywwsss 95t06gs ywwsss e b b1 e d l2 l3 c1 a q a1 l4 c 1 2 3
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