200912071-3 a d v a n ced p o w e r electr on i cs c o r p . 1/5 AP73T03GMT-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data g d s bv 3 0v simple drive requirement s o-8 compatible with heatsink rohs-compliant , halogen-free i 58a o rdering information AP73T03GMT-HF-3tr rohs-compliant halogen-free pmpak ? 5x6, shipped on tape and reel (3000pcs/reel) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the pmpak ? 5x6 package is specially designed for dc-dc converter applications, with a foot print that is compatible with the popular so-8 and offers a backside heat sink and lower package profile. s s s g pmpak ? 5x6 d d d d symbol units v ds v gs i d at t c =2 5 c i d at t a =2 5 c i d at t a =7 0 c i dm p d at t c =2 5 c p d at t a =2 5 c e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 c/w rthj-a maximum thermal resistance, junction-ambien t 3 25 c /w 5 w 58 a pulsed drain current 1 160 a parameter rating drain-source voltage 30 v parameter gate-source voltage 20 v continuous drain current 3 18.3 a continuous drain current (chip) continuous drain curren t 3 14.7 a total power dissipation 50 w storage temperature range operating junction temperature range -55 to 150 c -55 to 150 c total power dissipation 28.8 low on-resistance r 9m w pmpak ? is a registered trademark of advanced power electronics corp.
a d v a n ced p o w e r electr on i cs c o r p . 2/5 AP73T03GMT-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =2 5 c (unless otherwise specified) this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 9 m? ? w , v gs =10v - 22 - ns t f fall time r d =15w - 9.5 - ns c iss input capacitance v gs =0v - 700 1120 pf c oss output capacitance v ds =25v - 215 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf r g gate resistance f=1.0mhz - 1.9 - w source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 24 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by maximum junction temperature 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 60 o c/w at steady state. 4.starting t j =25 o c, v dd =25v, l=0.1mh, r g =25w , i as =24a.
a d v a n ced p o w e r electr on i cs c o r p . 3/5 AP73T03GMT-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 20 40 60 80 100 024681 0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 6 7 8 9 10 11 12 24681 0 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
a d v a n ced p o w e r electr on i cs c o r p . 4/5 AP73T03GMT-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge typical electrical characteristics (cont.) 0 2 4 6 8 10 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v 0 200 400 600 800 1000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 1 10 100 1000 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = pdm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse operation in this area limited by r ds(on)
a d v a n ced p o w e r electr on i cs c o r p . 5/5 AP73T03GMT-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: pmpak ? 5x6 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: product: ap73t03 gmt = rohs-compliant pmpak ? 5x6 package code millimeters min nom max a 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 - - d1 4.80 4.90 5.10 d2 - - 4.20 e 5.90 6.00 6.10 e1 (reference) 5.70 5.75 5.80 e2 (reference) 3.38 3.58 3.78 e h - - 0.62 k (reference) 0.70 - - l 0.51 0.61 0.71 l1 - - 0.20 0 - 12 symbols 1.27 bsc date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence a (reference) 73t03gm t ywwsss
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