wsb5510m 2a, schottky barrier diode features ? schottky barrier rectifier ? guarding protection ? low forward voltage ? reverse energy tested ? high current capability ? extremely low thermal resistance ? standard products are pb - free and halogen - free mechanica l data ? case: sma molded plastic body ? polarity: color band denotes cathode end ? mounting position: any sma ( do - 214ac ) . eb = device code * = month code (a~z) pin configuration and marking order i nformation device package shipping wsb5510m - 2/tr sma ( do - 214ac ) 5000/tape&reel 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal characteristics electronics characteristics (t a =25 o c) * : pulse test , pulse width 300us, duty cycle 1% parameter symbol value unit maximum repetitive peak reverse voltage v rrm 40 v maximum rms voltage v rws 28 v maximum dc blocking voltage v dc 40 v maximum average forward rectified current at t l (fig.2) i f (av) 2.0 a peak forward surge current 8.3ms single half - sine - wave i f sm 50 a operating temperature range t j - 55 ~ 125 o c storage temperature range t stg - 55 ~ 150 o c parameter symbol value unit maximum thermal resistance (junction to lead)(fig.2) r jl 24 o c /w parameter symbol value unit maximum instantaneous forward voltage @if=2.0a * v f 0.50 v ma ximum reverse current @ v dc ( t j =25 o c) i r 0.4 ma maximum reverse current @ v dc ( t j = 100 o c) i r 10 ma wsb5510m 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) fig.1: p eak forward su rge current fig.3: typical forward characteristics fig.2: power derating curve fig.4: typical reverse characteristics fig.5: junction capacitance vs. reverse voltage 1 10 100 0 10 20 30 40 50 60 at rated t l 8.3ms single half sine-wave peak forward surge current (a) number of cycles at 60hz 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 resistive or inductive load device mounted at 5x5mm copper pad current (a) lead temperature ( o c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1e-3 0.01 0.1 1 forward current (a) forward voltage (v) +125 o c +85 o c +65 o c +25 o c -25 o c -40 o c 5 10 15 20 25 30 35 40 1e-4 1e-3 0.01 0.1 1 10 100 1000 10000 reverse current (ua) reverse voltage (v) +125 o c +85 o c +65 o c +25 o c -25 o c -40 o c wsb5510m 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1 10 100 0 10 20 30 40 50 60 at rated t l 8.3ms single half sine-wave peak forward surge current (a) number of cycles at 60hz 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 resistive or inductive load device mounted at 5x5mm copper pad current (a) lead temperature ( o c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1e-3 0.01 0.1 1 forward current (a) forward voltage (v) +125 o c +85 o c +65 o c +25 o c -25 o c -40 o c 5 10 15 20 25 30 35 40 1e-4 1e-3 0.01 0.1 1 10 100 1000 10000 reverse current (ua) reverse voltage (v) +125 o c +85 o c +65 o c +25 o c -25 o c -40 o c
package ou tline dimensions sma ( do - 214ac ) symbol dimensions in millimeter min. max. a 4.25 4.65 b 2.40 2.80 c 1.85 2.15 d 4.85 5.35 e 0.10 0.30 f 0.90 1.50 g 0.20 max. h 1.90 2.30 i 1.35 1.65 wsb5510m 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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