2011. 7. 12 1/3 semiconductor technical data KTJ6131V revision no : 0 ultra-high speed switching applications analog switch applications features h 2.5 gate drive. h low threshold voltage : v th =-0.5 q -1.5v. h high speed. h small package. h enhancement-mode. maximum rating (ta=25 ? ) 1. source 2. gate 3. drain dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) marking m1 type name p channel mos field effect transistor d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = ? 16v, v ds =0v - - ? 1 a drain-source breakdown voltage v (br)dss i d =-100 a, v gs =0v -30 - - v drain cut-off current i dss v ds =-30v, v gs =0v - - -1 a gate threshold voltage v th v ds =-3v, i d =-0.1ma -0.5 - -1.5 v forward transfer admittance |y fs | v ds =-3v, i d =-10ma 15 - - ms drain-source on resistance r ds(on) i d =-10ma, v gs =-2.5v - 20 40 ? input capacitance c iss v ds =-3v, v gs =0v, f=1mhz - 10.4 - pf reverse transfer capacitance c rss v ds =-3v, v gs =0v, f=1mhz - 2.8 - pf output capacitance c oss v ds =-3v, v gs =0v, f=1mhz - 8.4 - pf switching time turn-on time t on v dd =-3v, i d =-10ma, v gs =0 q -2.5v - 0.15 - s turn-off time t off - 0.13 - s characteristic symbol rating unit drain-source voltage v ds -30 v gate-source voltage v gss ? 20 v dc drain current i d -50 ma drain power dissipation p d 100 mw channel temperature t ch 150 ? storage temperature range t stg -55 q 150 ?
2011. 7. 12 2/3 KTJ6131V revision no : 0
2011. 7. 12 3/3 KTJ6131V revision no : 0
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