creat by art - patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability - halogen-free according to iec 61249-2-21 definition - moisture sensitivity level: level 1, per j-std-020 case: sod123he molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v rrm v rwm v rm v rms v i f(av) a typ max typ max i f = 1a 0.33 - 0.39 - i f = 3a 0.40 0.47 0.49 0.58 i f = 1a 0.24 - 0.28 - i f = 3a 0.34 0.44 0.43 0.52 t j = 25c a t j = 125c ma t j c t stg c document number: ds_d1411049 version: f15 typical thermal resistance r jl r ja 23 70 c/w e3u45 e3u60 t j = 125c t j = 25c dc blocking voltage working peak reverse voltage maximum average forward rectified current marking code 42 i fsm instantaneous forward voltage (note 1) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i r features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec typical applications trench schottky barrier rectifier is designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. mechanical data note 1: pulse test with pulse width=300 s, 1% duty cycle - 55 to +150 a 45 60 maximum repetitive peak reverse voltage 3 operating junction temperature range storage temperature range - 55 to +150 50 maximum instantaneous reverse current at rated reverse voltage 1000 80 sod123he polarity: indicated by cathode band weight: 0.022 g (approximately) maximum rms voltage tsse3u45 - TSSE3U60 3a, 45v - 60v trench schottk y rectifiers tsse3u45 TSSE3U60 v f taiwan semiconductor symbol maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter 32 v unit v
note 1: "xx" defines voltage from 45v (tsse3u45) to 60v (TSSE3U60) ratings and characteristics curves (t a =25 o c unless otherwise noted) document number: ds_d1411049 version: f15 tsse3u45hc0g tsse3u45 h c0 g aec-q101 qualified green compound note 2: whole series with green compound (halogen-free) example preferred part no. part no. part no. suffix packing code packing code suffix description packing tsse3uxx (note 1, 2) h rv g sod123he 3,000 / 7" reel rq sod123he 10,000 / 13" reel tsse3u45 - TSSE3U60 taiwan semiconductor ordering information part no. part no. suffix packing code packing code suffix package 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 tsse3u45 t j =125 o c t j =100 o c t j =25 o c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 t j =125 o c t j =100 o c t j =25 o c tsse3u45 0 1 2 3 4 50 60 70 80 90 100 110 120 130 140 150 with heatsink 5mm x 5mm pad pcb fig.1 forward current derating curve average forward current (a) instantaneous forward current (a) instantaneous reverse current (ma) fig.4 typical reverse characteristics lead temperature ( o c) forward voltage (v) percent of rated peak reverse voltage (%) fig.2 typical forward characteristics 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 TSSE3U60 t j =125 o c t j =100 o c t j =25 o c instantaneous forward current (a) forward voltage (v) fig.3 typical forward characteristics
document number: ds_d1411049 version: f15 tsse3u45 - TSSE3U60 taiwan semiconductor 10 100 1000 10000 0.1 1 10 100 f=1.0mhz vslg=50mvp-p capacitance (pf) fig.6 typical junction capacitance reverse voltage (v) 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 TSSE3U60 t j =125 o c t j =100 o c t j =25 o c instantaneous reverse current (ma) fig.5 typical reverse characteristics percent of rated peak reverse voltage (%)
sod123he min max min max a 1.65 1.95 0.06 0.08 b 2.60 3.00 0.10 0.12 c 0.85 1.15 0.03 0.05 d 0.75 0.85 0.03 0.03 e 0.10 0.20 0.00 0.01 f 0.55 0.75 0.02 0.03 g 0.35 0.55 0.01 0.02 h 1.90 2.30 0.07 0.09 i 1.35 1.55 0.05 0.06 j 0.95 1.25 0.04 0.05 k 3.50 3.90 0.14 0.15 l 0.35 0.55 0.01 0.02 p/n = marking code yw = date code f = factory code document number: ds_d1411049 version: f15 unit (inch) 0.055 0.094 0.028 0.035 0.055 0.90 e1.40 suggested pad layout a1.40 b2.40 symbol unit (mm) marking diagram tsse3u45 - TSSE3U60 taiwan semiconductor c0.70 d package outline dimensions dim. unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411049 version: f15 tsse3u45 - TSSE3U60 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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